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  0.56m Datasheet PDF File

For 0.56m Found Datasheets File :: 143    Search Time::1.906ms    
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    TY Semiconductor Co., Ltd
Part No. APM2301CAC
OCR Text 0 1 c a p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n ...56m w (typ.) @ v gs = -4.5v r ds(on) = 85m w (typ.) @ v gs = -2.5v r ds(on) = 106m w (typ.) @ v g...
Description Pin Description

File Size 245.14K  /  3 Page

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    MTD55N10J3

Cystech Electonics Corp.
Part No. MTD55N10J3
OCR Text ... package shipping mtd55n10j3-0-t3-g to-252 (pb-free lead plating an d halogen-free package) 2500 pcs / tape & reel ...56m g d s mtd55n10j3 g gate d drain s source environment friendly grade : s for ...
Description N -Channel Logic Level Enhancement Mode Power MOSFET

File Size 257.33K  /  9 Page

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    UTT10NP06 UTT10NP06G-S08-R UTT10NP06L-S08-T UTT10NP06L-S08-R UTT10NP06G-S08-T UTT10NP06L-TN4-R UTT10NP06G-TN4-T UTT10NP0

Unisonic Technologies
Part No. UTT10NP06 UTT10NP06G-S08-R UTT10NP06L-S08-T UTT10NP06L-S08-R UTT10NP06G-S08-T UTT10NP06L-TN4-R UTT10NP06G-TN4-T UTT10NP06L-TN4-T
OCR Text ... dissipation t a =25c p d 2.0 w junction temperature t j -55~+150 c storage temperature range t stg -55~+150 c note : absolute maximum ratings are those values bey ond which the device could be permanently damaged. absolute max...
Description DUAL ENHANCEMENT MODE (N-CHANNEL/ P-CHANNEL)

File Size 249.46K  /  7 Page

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    DMP2038USS-15

Diodes Incorporated
Part No. DMP2038USS-15
OCR Text ...ility classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals connections: see diagram ? terminals: finish - matte tin annealed over copper lead frame. solderable per mil-std-202, method 208 ? w...
Description 20V P-CHANNEL ENHANCEMENT MODE MOSFET

File Size 279.21K  /  6 Page

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    Infineon
Part No. BCP52M
OCR Text ...voltage i c = 10 ma, i b = 0 45 60 100 - - - bcp 51m bcp 52m bcp 53m - - - v (br)cbo collector-base breakdown voltage i c = 100 a, i b = 0 v (br)ebo 5 emitter-base breakdown voltage i e = 10 a, i c = 0 - - na 100 c...
Description PNP Silicon AF Transistor for AF driv...

File Size 94.27K  /  4 Page

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    Wuxi NCE Power Semicond...
Part No. NCE0117K
OCR Text ... v1.0 1 nce n-channel enhancement mode power mosfet description the nce0117k uses advanced trench technolog...56m ? ) high density cell design for ultra low rdson fully characterized avalanche voltage...
Description NCE N-Channel Enhancement Mode Power MOSFET

File Size 444.22K  /  7 Page

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    Wuxi NCE Power Semicond...
Part No. NCE0117
OCR Text ... v1.0 1 nce n-channel enhancement mode power mosfet description the nce0117 uses advanced trench technology...56m ? ) high density cell design for ultra low rdson fully characterized avalanche voltage...
Description NCE N-Channel Enhancement Mode Power MOSFET

File Size 341.35K  /  7 Page

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    ST Microelectronics
Part No. STP90NS04ZC
OCR Text ...s drain-source voltage (v gs = 0) 33 (1) 1. voltage is limited by zener diodes v v dg drain-gate voltage 33 (1) v v gs gate-source voltag...56m ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pul...
Description N-channel clamped 5mOhm - 80A TO-220

File Size 313.86K  /  13 Page

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    HUF76413DKF085

Fairchild Semiconductor
Part No. HUF76413DKF085
OCR Text ...-low on-resistance r ds(o n) = 0. 049 ?, v gs = 10v ? ult ra-low on-resistance r ds( o n) = 0.056 ?, v gs = 5v mosfet maxi mum ratings t a = 25c unless ot herwise noted thermal cha racteristics this p roduct has been des...
Description N-Channel Logic Level UltraFETPower MOSFET 60V, 4.8A, 56m

File Size 562.02K  /  11 Page

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    CDRH5D28NP-150NC CDRH5D28NP-560NC

Sumida Corporation
Part No. CDRH5D28NP-150NC CDRH5D28NP-560NC
OCR Text ...netically shielded. ? l w h:6.0 6.0 3.0 mm max. ? product weight: 0.4g(ref.) ? moisture sensitivity level: 1 ? rohs compliance. ? halog...56m) 12 30% 120 cdrh5d28np-120nc 1.30 65m (48m) 10 30% 100 cdrh5d28np-100nc 1.60 53m (39m) 8.2 30...
Description SMD Power Inductor CDRH5D28
   SMD Power Inductor CDRH5D28

File Size 178.40K  /  5 Page

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