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  0.4-ghz Datasheet PDF File

For 0.4-ghz Found Datasheets File :: 32603    Search Time::2.218ms    
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    ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736

Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
Part No. ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736
OCR Text 0.5 - 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 Features * High Associated Gain: 13.0 dB Typical at 4 GHz * Low Bias: VDS = 2 V, IDS = 25 mA * High Output Power: 20.0 dBm typical P 1 dB at 4 GHz * Low Noise F...
Description 0.5-12 GHz General Purpose Gallium Arsenide FET
0.5?12 GHz General Purpose Gallium Arsenide FET
0.512 GHz General Purpose Gallium Arsenide FET

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    ATF-13100 ATF-13100-GP3

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-13100 ATF-13100-GP3
OCR Text ...s GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems a...4 V, IDS = 40 mA 1 dB Compressed Gain; VDS = 4 V, IDS = 40 mA Transconductance: VDS = 2.5 V, VGS = 0...
Description 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET)
2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管(2-18 GHz的低噪声砷化镓场效应管)

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    ATF-13336 ATF-13336-STR ATF-13336-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-13336 ATF-13336-STR ATF-13336-TR1
OCR Text ...2 GHz * High Associated Gain: 9.0 dB Typical at 12 GHz * High Output Power: 17.5 dBm Typical P 1 dB at 12 GHz * Cost Effective Ceramic Micro...4 1.6 11.5 9.0 7.5 17.5 8.5 25 40 -4.0 55 50 -1.5 90 -0.5 1.6 GA Gain @ NFO: VDS = 2.5 V, IDS ...
Description 2-16 GHz Low Noise Gallium Arsenide FET

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    ATF-13736 ATF-13736-STR ATF-13736-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-13736 ATF-13736-STR ATF-13736-TR1
OCR Text ...2 GHz * High Associated Gain: 9.0 dB Typical at 12 GHz * High Output Power: 17.5 dB Typical at 12 GHz * Cost Effective Ceramic Microstrip Pa...4.0 Min. Typ. Max. 1.5 1.8 2.1 11.5 9.0 7.0 17.5 8.5 55 50 -1.5 90 -0.5 2.2 GA Gain @ NFO: VDS...
Description 2-16 GHz Low Noise Gallium Arsenide FET

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    ATF-13786 ATF-13786-STR ATF-13786-TR1 ATF13786

Electronic Theatre Controls, Inc.
Agilent (Hewlett-Packard)
ETC[ETC]
HP[Agilent(Hewlett-Packard)]
List of Unclassifed Manufacturers
Part No. ATF-13786 ATF-13786-STR ATF-13786-TR1 ATF13786
OCR Text ...S 21 MSG 2 SOURCE 5 0 1 5 FREQUENCY (GHz) 10 20 Insertion Power Gain, Maximum Available Gain, and Maximum Stable ...4 -4 -6 IDSS 225 150 -65 to +150 Notes: 1. Operation of this device above any one of these conditio...
Description Surface Mount Gallium Arsenide FET for Oscillators

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    ATF-21170

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-21170
OCR Text 0.5- 6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170 Features * Low Noise Figure: 0.9 dB Typical at 4 GHz * High Associated Gain: 13.0 dB Typical at 4 GHz * High Output Power: 23.0 dBm Typical P 1 dB at 4 GHz * Hermetic G...
Description 0.5-6 GHz Low Noise Gallium Arsenide FET

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    ATF-21186 ATF-21186-STR ATF-21186-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-21186 ATF-21186-STR ATF-21186-TR1
OCR Text 0.5 - 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-21186 Features * Low Noise Figure: 0.5 dB Typ. @ 2 GHz * High Outpu...4 GHz bands, including in cellular phones, PCN, and ISM band spread spectrum applications. 85 mil...
Description 0.5-6 GHz General Purpose Gallium Arsenide FET

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    ATF-25170

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-25170
OCR Text 0.5 - 10 GHz Low Noise Gallium Arsenide FET Technical Data ATF-25170 Features * Low Noise Figure: 0.8 dB Typical at 4 GHz * High Associated Gain: 14.0 dB Typical at 4 GHz * High Output Power: 21.0 dBm Typical P 1 dB at 4 GHz * Hermetic...
Description 0.5-10 GHz Low Noise Gallium Arsenide FET

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    ATF-25570

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-25570
OCR Text 0.5 - 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features * High Output Power: 20.5 dBm Typical P1 dB at 4 GHz * Low Noise Figure: 1.0 dB Typical at 4 GHz * High Associated Gain: 14.0 dB Typical at 4 GHz * Her...
Description 0.5-10 GHz General Purpose Gallium Arsenide FET

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    ATF-25735

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-25735
OCR Text 0.5-10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25735 Features * High Output Power: 19.0 Bm Typical P 1 dB at 4 GHz * High Gain: 12.5 dB Typical G 1 dB at 4 GHz * Low Noise Figure: 1.2 dB Typical at 4 GHz * Cost Effe...
Description 0.5-10 GHz General Purpose Gallium Arsenide FET

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