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EPA3393 SMB30 A1870 6T612G G2310 95301E3 UF16C60 BU4914F
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  0.4-500 Datasheet PDF File

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    2SC5014 2SC5014-T1 2SC5014-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5014 2SC5014-T1 2SC5014-T2
OCR Text ...n * Low Voltage Operation 2.1 0.2 1.25 0.1 PACKAGE DIMENSIONS in millimeters ORDERING INFORMATION 2 3 2.0 0.2 PART NUMBER 2SC501...4 -0.05 (1.25) QUANTITY 3 Kpcs/Reel. PACKING STYLE Embossed tape 8 mm wide. Pin3 (Base), Pi...
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 48.18K  /  8 Page

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    2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518

NEC[NEC]
NEC Corp.
Part No. 2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
OCR Text ...DIMENSIONS in millimeters 2.1 0.2 0.3 +0.1 -0.05 1.25 0.1 0.3 +0.1 -0.05 (LEADS 2, 3, 4) 1 4 0.4 +0.1 -0.05 2SC5015-T2 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Collector), Pin2 (Emitter) faceto perforation s...
Description Discrete
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 49.94K  /  8 Page

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    2SC5018

PANASONIC[Panasonic Semiconductor]
Matsshita / Panasonic
Part No. 2SC5018
OCR Text ...ed switching Unit: mm 6.90.1 0.15 1.05 2.50.1 0.05 (1.45) 0.8 0.5 4.50.1 0.7 4.0 s Features q q 0.65 max. 1.0 1.0 High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.2 s Absolute Maxi...
Description Transistor
Silicon NPN triple diffusion planer type(For high breakdown voltage high-speed switching)

File Size 35.44K  /  2 Page

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    2SC5019

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5019
OCR Text ...ng and the magazine packing. 0.4max. 45 1.0-0.2 +0.1 0.40.08 0.50.08 1.50.1 3.00.15 3 2 1 4.0-0.20 0.40.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base ...
Description Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

File Size 37.02K  /  2 Page

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    2SC5022

HITACHI[Hitachi Semiconductor]
Part No. 2SC5022
OCR Text ... -- -- -- -- Max 10 100 10 -- 5.0 V Unit A A A Test conditions VCE = 1500 V, RBE = 0 VCE = 1500 V, RBE = VEB = 6 V, IC = 0 VCE = 5 V, IC = ...4 Collector Power Dissipation Pc (W) Maximum Safe Operation Area 100 I C (mA) 50 20 10 0.5 0.2 0.1 1...
Description Silicon NPN Triple Diffused

File Size 33.36K  /  7 Page

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    2SC5032

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5032
OCR Text ....10.2 8.00.2 Solder Dip 13.7-0.2 +0.5 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Sa...4 123 2.60.1 0.70.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector ...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 57.59K  /  3 Page

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    2SC5034

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5034
OCR Text ...tings 500 500 400 7 15 7 3 35 2.0 150 -55 to +150 Unit V V V V A A A W C C 15.00.3 3.00.2 Parameter Collector to base voltage Colle...4 123 2.60.1 0.70.1 7 1:Base 2:Collector 3:Emitter TO-220E Full Pack Package s Electrica...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 58.16K  /  3 Page

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    2SC5035

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5035
OCR Text ... C 15.00.3 3.00.2 13.7-0.2 +0.5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 7 1:Base 2:Collector 3:Emitter TO-220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current ...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 61.01K  /  3 Page

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    2SC5063

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5063
OCR Text ...C) Ratings 500 500 400 7 3 1.5 0.5 25 1.3 150 -55 to +150 Unit V 10.5min. 2.0 0.80.1 0.5max. 2.540.3 5.080.5 1 2 3 s Abso...4 V 2.0 3.0-0.2 A A A W C C 4.40.5 0.80.1 2.540.3 R0.5 R0.5 1.1 max. 0 to 0.4 ...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 60.70K  /  3 Page

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    2SC5071

SANKEN[Sanken electric]
Part No. 2SC5071
OCR Text ...100(TO3P) 5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=-1A VCB=1...
Description Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

File Size 23.88K  /  1 Page

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