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  0.0185 Datasheet PDF File

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    2N6102 2N6103

Savantic, Inc.
Part No. 2N6102 2N6103
OCR Text ...nsition frequency CONDITIONS IC=0.1A ;IB=0 IC=5A;IB=0.5A IC=16A;IB=3.2A IC=5A ; VCE=4V IC=16A ; VCE=4V VCB=Rated VCBO;IE=0 TC=150 VEB=8V; IC=0 IC=8A ; VCE=4V IC=15A ; VCE=4V IC=0.5A ; VCE=4V 2N6102 2N6103 SYMBOL VCEO(SUS) VCE(sat-1) V...
Description Silicon NPN Power Transistors

File Size 87.48K  /  3 Page

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    2N7002DW

Fairchild Semiconductor
Part No. 2N7002DW
OCR Text ...e mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, Minimun land pad size, (c) 2007 Fairchild Semiconductor Corporation 2N7002DW Rev. A 1 www.fairchildsemi.com 2N7002DW -- N-Channel Enhancement Mode Field Effect Transistor E...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 221.16K  /  6 Page

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    2N7002E

Vishay Siliconix
Part No. 2N7002E
OCR Text ...g Limit 60 "20 240 190 1300 0.35 0.22 357 -55 to 150 Unit V mA W _C/W _C Notes a. Pulse width limited by maximum junction temperature. Document Number: 70860 S-31987--Rev. D, 13-Oct-03 www.vishay.com 1 2N7002E Vishay...
Description N-Channel 60-V (D-S) MOSFET

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    2N7002E

Guangdong Kexin Industrial Co.,Ltd
Part No. 2N7002E
OCR Text 0.1 2.9-0.1 +0.1 0.4-0.1 MOSFET Unit: mm +0.1 2.4-0.1 Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage +0.1 1.3-0.1 Low On-Resistance: RDS(ON) 1 +0.1 0.95-0.1 +0.1 1.9-0.1 ...
Description N-Channel Enhanceent Mode Field Effect Transistor

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    2N7002

Dc Components
Part No. 2N7002
OCR Text ...g applications. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Gate 2 = Source 3 = Drain 3 o Absolute Maximum Ratings(TA=25 Characteristic Drain-Source Voltage Drain-Gate Voltage (RGS=1M) Gate-Source Voltage (Continuous) Drain Curr...
Description TECHNICAL SPECIFICATIONS OF N-CHANNEL SMALL SIGNAL MOSFET

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    2PB709ARL_DG 2PB709ARL 2PB709ASL 2PB709ASL/DG 2PB709ARL/DG

NXP Semiconductors N.V.
Part No. 2PB709ARL_DG 2PB709ARL 2PB709ASL 2PB709ASL/DG 2PB709ARL/DG
OCR Text ... Conditions VCB = -45 V; IE = 0 A VCB = -45 V; IE = 0 A; Tj = 150 C VEB = -5 V; IC = 0 A VCE = -10 V; IC = -2 mA Min - Typ - Max -10 -5 -10 Unit nA A nA IEBO hFE 210 290 - - 340 460 -500 mV 2PB709AXL_1 (c) NX...
Description 45 V, 100 mA PNP general-purpose transistors 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB PLASTIC PACKAGE-3

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    2SA1015

Dc Components
Part No. 2SA1015
OCR Text ...W o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 321 C .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C Electrical Chara...
Description TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

File Size 208.06K  /  1 Page

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    2SA1029 2SA1029CTZ 2SA1030BTZ 2SA1030CTZ 2SA1029BTZ 2SA1029DTZ

Renesas Electronics Corporation
Part No. 2SA1029 2SA1029CTZ 2SA1030BTZ 2SA1030CTZ 2SA1029BTZ 2SA1029DTZ
OCR Text ...-- -- -- -- -- -- -- 280 -- -- -0.5 -0.5 500 -0.8 -0.2 -- 2SA1030 Min Typ Max -55 -- -- -50 -5 -- -- 100 -- -- 200 -- -- -- -- -- -- -- 280 3.3 -- -- -0.5 -0.5 320 -0.8 -0.2 -- 4.0 Unit V V V A A Test conditions IC = -10 A, IE = 0 IC = -1 m...
Description Silicon PNP Epitaxial

File Size 152.86K  /  6 Page

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    2SA1102

Savantic, Inc.
Part No. 2SA1102
OCR Text ...eakdown voltage IC=-25mA ;IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.5 V VBEsat Base-emitter saturation voltage IC=-3A; IB=-0.3A -1.8 V ICBO Collector cut-off curr...
Description Silicon PNP Power Transistors

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    2SA1103

Savantic, Inc.
Part No. 2SA1103
OCR Text ...eakdown voltage IC=-25mA ;IB=0 -100 V VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.5 V VBEsat Base-emitter saturation voltage IC=-3A; IB=-0.3A -1.8 V ICBO Collector cut-off cur...
Description Silicon PNP Power Transistors

File Size 130.49K  /  3 Page

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