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AUK, Corp.
AUK[AUK corp]
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| Part No. |
SUR503EF
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| OCR Text |
...*
Test Condition
VO=50V, VI=0 VO=5V, IO=10mA IO=10mA, II=0.5mA VO=0.2V, IO=5mA VO=5V, IO=0.1mA VO=10V, IO=5mA VI=5V
Min. Typ. Max.
80 0.5 200 0.1 0.9 0.65 200 500 0.3 1.3 1.8
Unit
nA V V V MHz mA
II
* : Characteristic of T... |
| Description |
Epitaxial Planar Type NPN Silicon Transistor 外延型NPN硅平面晶体管
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| File Size |
139.44K /
3 Page |
 View
it Online |
Download Datasheet
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AUK[AUK corp]
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| Part No. |
SUR506EF
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| OCR Text |
...
Test Condition
VO=-50V, VI=0 VO=-5V, IO=-10mA IO=-10mA, II=-0.5mA VO=-0.2V, IO=-5mA VO=-5V, IO=-0.1mA VO=-10V, IO=-5mA VI=-5V
Min. Typ. Max.
80 -0.4 200 -0.1 200 -500 -0.3 -1.1 -3.6
Unit
nA V V V MHz mA
II
* : Characteris... |
| Description |
Epitaxial Planar Type PNP Silicon Transistor
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| File Size |
120.06K /
3 Page |
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it Online |
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VISAY[Vishay Siliconix]
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| Part No. |
SUR50N024-06P
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| OCR Text |
...erature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characterist... |
| Description |
N-Channel 20-V (D-S) 175° MOSFET
N-Channel 20-V (D-S) 175∑ MOSFET
N-Channel 20-V (D-S) 175隆? MOSFET
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| File Size |
189.81K /
3 Page |
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it Online |
Download Datasheet |
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Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
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| Part No. |
SUR50N025-05P-T4-E3 SUR50N025-05P SUR50N025-05P-E3
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| OCR Text |
... (A)a, e
89 80
rDS(on) (W)
0.0052 @ VGS = 10 V 0.0076 @ VGS = 4.5 V
Qg (Typ)
30 nC
D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant
APPLICATIONS
D DC/DC Conversion, Low-Side - Desktop PC - Notebook PC
TO-252 Re... |
| Description |
N-Channel 25-V (D-S) MOSFET N沟道25V（D-S）MOSFET
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| File Size |
93.06K /
6 Page |
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it Online |
Download Datasheet |
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VISAY[Vishay Siliconix]
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| Part No. |
SUR50N03-06P
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| OCR Text |
...RY
VDS (V)
30
rDS(on) (W)
0.0065 @ VGS = 10 V 0.0095 @ VGS = 4.5 V
ID (A)b
84b 59b
D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier Operation D 100% Rg Tested
APPLICATIONS... |
| Description |
MOSFETs
N-Channel 30-V (D-S) 175C MOSFET
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| File Size |
63.90K /
4 Page |
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it Online |
Download Datasheet |
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VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
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| Part No. |
SUR50N03-12P-T4-E3 SUR50N03-12P SUR50N03-12P-E3
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| OCR Text |
...RY
VDS (V)
30
rDS(on) (W)
0.012 @ VGS = 10 V 0.0175 @ VGS = 4.5 V
ID (A)a
17.5 14.5
D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested
APPLICATIONS
D DC/DC Converters - High-Side, Desktop CPU Core D Synchronous Rect... |
| Description |
MOSFETs
From old datasheet system
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode 双N沟道30 V的（副）MOSFET的肖特基二极
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| File Size |
64.32K /
4 Page |
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it Online |
Download Datasheet |
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VISAY[Vishay Siliconix]
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| Part No. |
SUR50N03-16P
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| OCR Text |
...RY
VDS (V)
30
rDS(on) (W)
0.016 @ VGS = 10 V 0.024 @ VGS = 4.5 V
ID (A)a
15 12
D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested
APPLICATIONS
D DC/DC Converters - High-Side D Synchronous Rectifiers
TO-252 Revers... |
| Description |
MOSFETs
N-Channel 30-V (D-S) MOSFET
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| File Size |
64.56K /
4 Page |
View
it Online |
Download Datasheet |
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AUK[AUK corp]
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| Part No. |
SUR510EF
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| OCR Text |
...*
Test Condition
VO=50V, VI=0 VO=5V, IO=10mA IO=10mA, II=0.5mA VO=0.2V, IO=5mA VO=5V, IO=0.1mA VO=10V, IO=5mA VI=5V
Min.
80 1.0 -
Typ.
200 0.1 2.8 1.2 200 -
Max.
500 0.3 5.0 0.18
Unit
nA V V V MHz mA
II
* : Charact... |
| Description |
Epitaxial Planar Type NPN Silicon Transistor
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| File Size |
45.45K /
3 Page |
View
it Online |
Download Datasheet |
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AUK[AUK corp]
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| Part No. |
SUR511EF
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| OCR Text |
...*
Test Condition
VO=50V, VI=0 VO=5V, IO=10mA IO=10mA, II=0.5mA VO=0.2V, IO=5mA VO=5V, IO=0.1mA VO=10V, IO=5mA VI=5V
Min. Typ. Max.
50 1.0 80 0.1 1.8 1.2 200 0.88 500 0.3 2.4 -
Unit
nA V V V MHz mA
II
* : Characteristic of ... |
| Description |
NPN/PNP Epitaxial Planar Silicon Transistor
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| File Size |
81.08K /
3 Page |
View
it Online |
Download Datasheet |
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AUK[AUK corp]
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| Part No. |
SUR512EF
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| OCR Text |
...*
Test Condition
VO=50V, VI=0 VO=5V, IO=10mA IO=10mA, II=0.5mA VO=0.2V, IO=5mA VO=5V, IO=0.1mA VO=10V, IO=5mA VI=5V
Min. Typ. Max.
70 1.0 120 0.1 2.1 1.2 200 0.36 500 0.3 3.0 -
Unit
nA V V V MHz mA
II
* : Characteristic of... |
| Description |
NPN/PNP Epitaxial Planar Silicon Transistor
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| File Size |
76.72K /
3 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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