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For -mos Found Datasheets File :: 27293    Search Time::1.219ms    
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    MC33690DW MC33690

Motorola, Inc
Part No. MC33690DW MC33690
OCR Text ...t Optional : external N channel MOS required for sourced current > 50mA. A recommended reference is MMFT 3055VL from Motorola. VBAT C1 GATE SOURCE VSUP Voltage Regulator Freescale Semiconductor, Inc... VDD 10F LVR VDD VSS 8M...
Description Standalone Tag Reader Circuit

File Size 420.73K  /  24 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. 2SK3042
OCR Text MOS FETs 2SK3042 Silicon N-Channel Power F-mos FET s Features q Avalanche energy capacity guaranteed: EAS > 45mJ q High-speed switching: tf = 30ns q No secondary breakdown unit: mm 9.90.3 4.60.2 2.90.2 s Applications q Contactle...
Description Silicon N-Channel Power F-mos FET

File Size 41.63K  /  3 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. 2SK3043
OCR Text MOS FETs 2SK3043 Silicon N-Channel Power F-mos FET s Features q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = 30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown unit: mm 9.90.3 4.60.2 2.90.2 s ...
Description Silicon N-Channel Power F-mos FET

File Size 44.70K  /  3 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. 2SK3044
OCR Text MOS FETs 2SK3044 Silicon N-Channel Power F-mos FET s Features q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = 30V guaranteed q High-speed switching: tf = 50ns q No secondary breakdown unit: mm 9.90.3 4.60.2 2.90.2 s ...
Description Silicon N-Channel Power F-mos FET

File Size 43.95K  /  3 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. 2SK3045
OCR Text MOS FETs 2SK3045 Silicon N-Channel Power F-mos FET s Features q Avalanche energy capacity guaranteed: EAS > 15.6mJ q VGSS = 30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown unit: mm 9.90.3 4.60.2 2.90.2 s...
Description Silicon N-Channel Power F-mos FET

File Size 44.10K  /  3 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. 2SK3046
OCR Text MOS FETs 2SK3046 Silicon N-Channel Power F-mos FET s Features q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = 30V guaranteed q High-speed switching: tf = 60ns q No secondary breakdown unit: mm 9.90.3 4.60.2 2.90.2 s ...
Description Silicon N-Channel Power F-mos FET

File Size 44.25K  /  3 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. 2SK3047
OCR Text MOS FETs 2SK3047 Silicon N-Channel Power F-mos FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = 30V guaranteed q High-speed switching: tf = 25ns q No secondary breakdown unit: mm 9.90.3 4.60.2 2.90.2 s A...
Description Silicon N-Channel Power F-mos FET

File Size 42.97K  /  3 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. 2SK3048
OCR Text MOS FETs 2SK3048 Silicon N-Channel Power F-mos FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 9.90.3 4.60.2 2.90.2 s Applications q Contactless ...
Description Silicon N-Channel Power F-mos FET

File Size 44.13K  /  3 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. 2SK3064
OCR Text MOS FETs (Small Signal) 2SK3064 Silicon N-Channel MOS FET Secondary battery pack (Li ion battery, etc.) For switching 0.425 unit: mm 2.10.1 1.250.1 0.425 0.65 1 q High-speed switching q S-mini type package, allowing downs...
Description Silicon N-Channel MOS FET

File Size 29.81K  /  2 Page

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    NEC Corp.
NEC[NEC]
Part No. 2SK3224-Z 2SK3224
OCR Text MOS FIELD EFFECT TRANSISTOR 2SK3224 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3224 2SK3224-Z PACKAGE TO-251 TO-252 DESCRIPTION This product is N-Channel MOS Field Effect Transistor design...
Description SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 38.31K  /  4 Page

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For -mos Found Datasheets File :: 27293    Search Time::1.219ms    
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