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For w nov Found Datasheets File :: 7216    Search Time::1.594ms    
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    SMBT3906U

INFINEON[Infineon Technologies AG]
Part No. SMBT3906U
OCR Text ...ering point1) RthJS 135 K/w 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 nov-30-2001 SMBT3906U Electrical Characteristics at TA =25C, unless otherwise specified. Parameter Symbol Valu...
Description General Purpose Transistors - PNP Silicon Switching Transistor Array with high DC current gain

File Size 76.36K  /  8 Page

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    SMBT5087

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. SMBT5087
OCR Text ...) Symbol RthJS Value 240 Unit K/w 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 2 1 ...nov-30-2001 SMBT5087 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol V...
Description    PNP Silicon Transistor
General Purpose Transistors - PNP Silicon AF Transistor for AF input stages and driver applications

File Size 67.10K  /  6 Page

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    SMBTA06U

INFINEON[Infineon Technologies AG]
Part No. SMBTA06U
OCR Text ...ering point1) RthJS 105 K/w 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 nov-30-2001 SMBTA06U Electrical Characteristics Parameter DC Characteristics Collector-emitter breakdown voltage ...
Description NPN Silicon AF Transistor Array

File Size 50.48K  /  5 Page

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    SMBTA42M

INFINEON[Infineon Technologies AG]
Part No. SMBTA42M
OCR Text ...tal power dissipation, TS mA w C 45 K/w 1 nov-30-2001 SMBTA42M Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage IC =...
Description High Voltage Transistors - SCT595 NPN High Voltage Transistor
NPN Silicon High-Voltage Transistor

File Size 41.19K  /  4 Page

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    TH8080 TH8080JDC

List of Unclassifed Manufacturers
ETC[ETC]
Part No. TH8080 TH8080JDC
OCR Text ...V V V V V V V V V kV kV mA mw K/w C C ______________________________ [1] [2] ISO 7637 test pulses are applied to VS via a reverse pol...nov. 2000 Page 4 www.melexis.com TH8080 Single LIN Transceiver Static Characteristics (V...
Description Single LIN Bus Transceiver

File Size 154.38K  /  12 Page

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    BAV3004 BAV3004W BAV3004W-7

DIODES[Diodes Incorporated]
Part No. BAV3004 BAV3004w BAV3004w-7
OCR Text ...to +150 Unit V V V mA mA A mw C/w C Electrical Characteristics @ TA = 25C unless otherwise specified Characteristic Reverse Breakdown Vo...nov N 2009 w Dec D 500 IF, INSTANTANEOUS FORwARD CURRENT (mA) 1000 Pd, POwER DISSIPAT...
Description Circular Connector; No. of Contacts:5; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:14-5
SURFACE MOUNT LOw LEAKAGE DIODE

File Size 59.81K  /  2 Page

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    BFU510

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BFU510
OCR Text ... UNIT mA mw C C UNIT K/w handbook, halfpage 60 MLE136 Ptot (mw) 40 20 0 0 40 80 120 Ts (C) 160 Fig.2 Power derating curve. 2003 Jun 12 3 Philips Semiconductors Product specification NPN SiGe wide...
Description NPN SiGe wideband transistor

File Size 108.05K  /  16 Page

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    PUMD3

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PUMD3
OCR Text ... 1 VALUE 416 PUMD3 UNIT K/w MAX. UNIT Per transistor; for the PNP transistor with negative polarity ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) collector cut-off current collector cut-off current emitter cut-off current DC curre...
Description NPN/PNP resistor-equipped transistors

File Size 63.76K  /  12 Page

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    PUMH11 PUMH11_4

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PUMH11 PUMH11_4
OCR Text ...1 VALUE 416 PUMH11 UNIT K/w MAX. UNIT 100 1 50 400 - 150 0.8 - 13 1.2 2.5 nA A A A mV V V k pF 1999 Apr 13 4 Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH11 ...
Description From old datasheet system
NPN resistor-equipped double transistor

File Size 52.69K  /  8 Page

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    UZZ9001

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. UZZ9001
OCR Text ...tion to ambient VALUE 80 UNIT K/w ESD SENSITIVITY SYMBOL ESD PARAMETER ESD sensitivity CONDITIONS human body model machine model VALUE 2 150 UNIT kV V 2000 nov 27 3 Philips Semiconductors Product specification Sensor Condi...
Description Sensor Conditioning Electronic

File Size 74.49K  /  16 Page

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