| Description |
NTE IC, POWEr: 6 W, Pr='#FF0000'>aCKr='#FF0000'>aGE: 10 PIN SIPr>Srr='#FF0000'>aM Memory IC; Memory r='#FF0000'>type:MOS Srr='#FF0000'>aM; Interfr='#FF0000'>ace r='#FF0000'>type:Serir='#FF0000'>al; r='#FF0000'>access Time, Tr='#FF0000'>acc:300ns; Pr='#FF0000'>ackr='#FF0000'>age/Cr='#FF0000'>ase:22-DIP; Mounting r='#FF0000'>type:Through Holer>Voltr='#FF0000'>age regulr='#FF0000'>ator IC; Output Current:100mr='#FF0000'>a; Output Voltr='#FF0000'>age:9V; Pr='#FF0000'>ackr='#FF0000'>age/Cr='#FF0000'>ase:3-TO-92; Voltr='#FF0000'>age regulr='#FF0000'>ator r='#FF0000'>type:Positive Voltr='#FF0000'>age; Mounting r='#FF0000'>type:Throughr>DIODE ZENEr 150MW 33V 0603r>rECT Fr='#FF0000'>aST rEC 400V 8r='#FF0000'>a TO-220r='#FF0000'>a 高压多层陶瓷电容r>Smr='#FF0000'>all Signr='#FF0000'>al Diode; repetitive reverse Voltr='#FF0000'>age Mr='#FF0000'>ax, Vrrm:200V; Forwr='#FF0000'>ard Current r='#FF0000'>avg rectified, IF(r='#FF0000'>aV):250mr='#FF0000'>a; Forwr='#FF0000'>ard Voltr='#FF0000'>age Mr='#FF0000'>ax, VF:1.25V; Vf Test Current:200mr='#FF0000'>a; reverse recovery Time, trr:50ns; Power Dissipr='#FF0000'>ation, Pd:400mW 高压多层陶瓷电容r>MEDIUM/HIGH VOLTr='#FF0000'>aGE MULTILr='#FF0000'>aYEr CErr='#FF0000'>aMIC Cr='#FF0000'>aPr='#FF0000'>aCITOrS 高压多层陶瓷电容r>rECT Fr='#FF0000'>aST rEC 600V 8r='#FF0000'>a TO-220r='#FF0000'>a 高压多层陶瓷电容r>rECTIFIEr BrIDGE 10r='#FF0000'>a 100V 170r='#FF0000'>a-ifsm 1.05V-vf 10ur='#FF0000'>a-ir GBJ 15/TUBE 高压多层陶瓷电容r>
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