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  transistor-20v -5a Datasheet PDF File

For transistor-20v -5a Found Datasheets File :: 2967    Search Time::0.797ms    
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    MIC59P60 MIC59P60BN MIC59P60BV MIC59P60BWM

MICREL[Micrel Semiconductor]
Part No. MIC59P60 MIC59P60BN MIC59P60BV MIC59P60BWM
OCR Text ...a latches, a bipolar Darlington transistor driver for each latch, and CMOS control circuitry for the common CLEAR, STROBE, CLOCK, SERIAL DAT...20V and may be paralleled for higher load current capability. Using a 5V logic supply, the MIC59P60 ...
Description 8-Bit Serial-Input Protected Latched Driver

File Size 100.74K  /  12 Page

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    NJM2367 NJM2367TA2050 NJM2367TLA2050

New Japan Radio Co., Ltd.
NJRC[New Japan Radio]
Part No. NJM2367 NJM2367TA2050 NJM2367TLA2050
OCR Text ...ly Control qInternal High Power Transistor 5.5A (min.) qFixed Frequency Oscillator 72kHz (typ.) qInternal Current Sense Amplifier qInternal ...20V Isource=75A,VFB=4.7V Isink=0.4mA,VFB=5.3V - - - 4.2 - PWM COMPARATOR BLOCK PARAMETER SYMBO...
Description 5.5A HIGH POWER DC/DC CONVERTER CONTROLLER IC 5.5A高功率DC / DC变换器控制IC

File Size 116.09K  /  7 Page

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    CA3094 CA3094A CA3094AE CA3094AT CA3094B CA3094BM CA3094BT CA3094E CA3094M FN598

INTERSIL[Intersil Corporation]
Part No. CA3094 CA3094A CA3094AE CA3094AT CA3094B CA3094BM CA3094BT CA3094E CA3094M FN598
OCR Text ...to an integral Darlington power transistor capable of sinking or driving currents up to 100mA. The gain of the differential input stage is p...20V, RL = 2k 20,000 86 1650 100,000 100 2200 500 50 0.70 2750 - V/V dB S V/s V/s V/s ...
Description 30MHz / High Output Current Operational Transconductance Amplifier
30MHz, High Output Current Operational Transconductance Amplifier (OTA)
From old datasheet system

File Size 239.40K  /  14 Page

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    FSL110R1 FSL110D FSL110D1 FSL110D3 FN4224 FSL110R4 FSL110R FSL110R3

INTERSIL[Intersil Corporation]
Part No. FSL110R1 FSL110D FSL110D1 FSL110D3 FN4224 FSL110R4 FSL110R FSL110R3
OCR Text ...silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation to...20V VGS = 0V to 12V VGS = 0V to 2V VDD = 50V, ID = 3.5A ID = 3.5A, VDS = 15V VDS = 25V, VGS = 0V, f ...
Description From old datasheet system
3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

File Size 58.10K  /  8 Page

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    FSL130D FSL130D1 FSL130D3 FSL130R FSL130R1 FSL130R3 FSL130R4 FN4031

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSL130D FSL130D1 FSL130D3 FSL130R FSL130R1 FSL130R3 FSL130R4 FN4031
OCR Text ...silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation to...20V VGS = 0V to 12V VGS = 0V to 2V VDD = 50V, ID = 8A ID = 8A, VDS = 15V VDS = 25V, VGS = 0V, f = 1M...
Description From old datasheet system
8A/ 100V/ 0.230 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 8A条,100V的,0.230欧姆,拉德硬,SEGR耐,N沟道功率MOSFET

File Size 45.31K  /  8 Page

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    FSL9110R1 FSL9110R FSL9110D FN4225 FSL9110R4 FSL9110D1 FSL9110D3 FSL9110R3

INTERSIL[Intersil Corporation]
Part No. FSL9110R1 FSL9110R FSL9110D FN4225 FSL9110R4 FSL9110D1 FSL9110D3 FSL9110R3
OCR Text ...silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation to...20V VGS = 0V to -12V VGS = 0V to -2V VDD = -50V, ID = 2.5A ID = 2.5A, VDS = -15V VDS = -25V, VGS = 0...
Description 2.5 A, 100 V, 1.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs

File Size 57.46K  /  8 Page

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    L4978D

STMicroelectronics
Part No. L4978D
OCR Text ...ce uses an internal power D-MOS transistor (with a typical Rdson of 0.25) to obtain very high efficency and high switching speed. TYPICAL AP...20V) Power dissipation a Tamb 60C Junction and storage temperature Minidip SO16 Input voltage Outpu...
Description 2A STEP DOWN SWITCHING REGULATOR

File Size 134.51K  /  12 Page

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    NDS9958

FAIRCHILD[Fairchild Semiconductor]
Part No. NDS9958
OCR Text Transistor General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's ...20V, RDS(ON) = 0.1 @ VGS = 10V. P-Channel -3.5A , -20V, RDS(ON) = 0.1 @ VGS = -10V. High density cel...
Description Dual N & P-Channel Enhancement Mode Field Effect Transistor

File Size 316.28K  /  12 Page

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    NDS9959

FAIRCHILD[Fairchild Semiconductor]
Part No. NDS9959
OCR Text Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietar...20V C oss 20 f = 1 MHz 10 0.1 0.2 V C rss V GS = 0V 0.5 1 2 5 10 , DRAIN TO SOURCE ...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 295.62K  /  10 Page

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For transistor-20v -5a Found Datasheets File :: 2967    Search Time::0.797ms    
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