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  sram chip 262144-word 4-bit hi Datasheet PDF File

For sram chip 262144-word 4-bit hi Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

    M6MGD13TW34DWG

Renesas Electronics Corporation
Part No. M6MGD13TW34DWG
Description Memory>MCP(Multi chip Package)>S-CSP(Stacked CSP)
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM

File Size 119.53K  /  3 Page

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    UPD444016LG5-A10-7JF UPD444016LG5-A12-7JF UPD444016LG5-A8-7JF UPD444016LLE-A8 UPD444016L UPD444016LLE-A10 UPD444016LLE-A

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. UPD444016LG5-A10-7JF UPD444016LG5-A12-7JF UPD444016LG5-A8-7JF UPD444016LLE-A8 UPD444016L UPD444016LLE-A10 UPD444016LLE-A12
Description 256K X 16 STANDARD sram, 8 ns, PDSO44
4M-BIT CMOS FAST sram 256K-WORD BY 16-BIT 4分位CMOS快速静态存储器256K字由16

File Size 100.12K  /  16 Page

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    PD46184184BF1-E40-EQ1 PD46185084BF1-E40-EQ1 PD46185094BF1-E40-EQ1 PD46185184BF1-E40-EQ1 PD46185364BF1-E40-EQ1 PD46184184

Renesas Electronics Corporation
Part No. PD46184184BF1-E40-EQ1 PD46185084BF1-E40-EQ1 PD46185094BF1-E40-EQ1 PD46185184BF1-E40-EQ1 PD46185364BF1-E40-EQ1 PD46184184BF1-E33Y-EQ1 PD46185364BF1-E33Y-EQ1 PD46185184BF1-E33Y-EQ1 PD46185094BF1-E33Y-EQ1 PD46185084BF1-E33Y-EQ1 PD46185184BF1-E40Y-EQ1 PD46185184BF1-E33-EQ1
Description 18M-BIT DDR II sram 4-WORD BURST OPERATION
18M-BIT QDRTM II sram 4-WORD BURST OPERATION

File Size 590.41K  /  39 Page

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    Analog Devices, Inc.
Part No. CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J-TE13 CAT64LC10ZS-TE13 CAT64LC10ZSI-TE13
Description 18-Mbit QDR™-II sram 4-Word Burst Architecture
18-Mbit DDR-II sram 2-Word Burst Architecture
36-Mbit DDR-II sram 2-Word Burst Architecture (2.5 Cycle Read Latency)
4-Mbit (256K x 18) Flow-Through Sync sram SPI串行EEPROM
SPI Serial EEPROM SPI串行EEPROM

File Size 494.12K  /  9 Page

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    M5M29KE131BVP

Renesas Electronics Corporation
Part No. M5M29KE131BVP
Description Memory>NOR type Flash Memory
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY Stacked-uMCP (micro Multi chip Package)

File Size 308.60K  /  33 Page

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    Renesas Electronics Corporation.
Renesas Electronics, Corp.
Part No. M38230G4-XXXFP M38230G4-XXXHP M38231G4-XXXHP M38232G4-XXXFP M38232G4-XXXHP M38233G4-XXXFP M38233G4-XXXHP M38234G4-XXXFP M38234G4-XXXHP M38235G4-XXXFP M38230G6-XXXFP M38230G6-XXXHP M38231G6-XXXFP M38231G6-XXXHP M38232G6-XXXFP M38232G6-XXXHP M38233G6-XXXFP M38233G6-XXXHP M38234G6-XXXFP M38234G6-XXXHP M38235G6-XXXFP M38235G6-XXXHP M38236G6-XXXHP M38237G6-XXXFP M38237G6-XXXHP M38238G6-XXXFP M38230G7-XXXFP M38230G7-XXXHP M38231G7-XXXFP M38231G7-XXXHP M38232G7-XXXFP M38232G7-XXXHP M38233G7-XXXFP M38233G7-XXXHP M38234G7-XXXFP M38234G7-XXXHP M38235G7-XXXFP M38235G7-XXXHP M38236G7-XXXFP M38236G7-XXXHP M38237G7-XXXFP M38237G7-XXXHP M38238G7-XXXFP M38238G7-XXXHP M38239G7-XXXFP M38239G7-XXXHP M38230G8-XXXFP M38230G8-XXXHP M38231G8-XXXFP M38231G8-XXXHP M38232G8-XXXFP M38232G8-XXXHP M38233G8-XXXFP M38233G8-XXXHP M38234G8-XXXFP M38234G8-XXXHP M38235G8-XXXFP M38235G8-XXXHP M38236G8-XXXFP M38236G8-XXXHP M38237G8-XXXFP M38237G8-XXXHP M38238G8-XXXFP M38238G8-XXXHP M38230GA-XXXFP M38230GA-XXXHP M38231GA-XXXFP M38231GA-XXXHP M38232GA-XXXFP M38232GA-XXXHP M38233GA-XXXFP M38233GA-XXXHP M38234GA-XXXFP M38234GA-XXXHP M38235GA-XXXFP M38235GA-XXXHP M38236GA-XXXFP M38236GA-XXXHP M38237GA-XXXFP M38237GA-XXXHP
Description 18-Mbit (512K x 36/1M x 18) Flow-Through sram; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II sram 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II sram 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined sram; Architecture: Standard Sync, Pipeline SCD; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit QDR(TM)-II sram 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
18-Mbit (512K x 36/1M x 18) Flow-Through sram; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II sram 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through sram with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II sram 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync sram; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit DDR-II sram 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
Sync sram; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II sram 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II sram 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync sram; Architecture: Standard Sync, Pipeline SCD; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II sram 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit DDR-II sram 2-Word Burst Architecture (2.0 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync sram; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
72-Mbit DDR-II sram 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
18-Mbit (512K x 36/1M x 18) Flow-Through sram; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
SINGLE-chip 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit QDR(TM)-II sram 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit QDR(TM)-II sram 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit QDR(TM)-II sram 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
SINGLE-chip 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
Sync sram; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit DDR-II sram 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit DDR-II sram 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit QDR(TM)-II sram 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V

File Size 901.80K  /  76 Page

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    UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD4416001

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD4416001
Description 16M X 1 STANDARD sram, 15 ns, PDSO54
16M-BIT CMOS FAST sram 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1

File Size 80.76K  /  12 Page

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    MSM514265E

OKI electronic components
OKI[OKI electronic componets]
Part No. MSM514265E
Description 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
262144-word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

File Size 144.29K  /  15 Page

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    TC55257DFL-55L TC55257DFL-55V TC55257DFL-70L TC55257DFL-70V TC55257DFL-85L TC55257DFL-85V TC55257DFT-55V TC55257DFT-70V

Toshiba, Corp.
Toshiba Corporation
TOShiBA[Toshiba Semiconductor]
Part No. TC55257DFL-55L TC55257DFL-55V TC55257DFL-70L TC55257DFL-70V TC55257DFL-85L TC55257DFL-85V TC55257DFT-55V TC55257DFT-70V TC55257DFT-85V TC55257DFTL-55L TC55257DFTL-70L TC55257DFTL-85L TC55257DPL TC55257DPL-55L TC55257DPL-55V TC55257DPL-70L TC55257DPL-70V TC55257DPL-85L TC55257DPL-85V TC55257DTRL-55L TC55257DTRL-55V TC55257DTRL-70L TC55257DTRL-70V TC55257DTRL-85L TC55257DTRL-85V TC55257DFL TC55257DFTL TC55257DTRL TC55257DFTL-55V TC55257DFTL-70V TC55257DFTL-85V TC55257PFL-85V TC55257PFL-55V TC55257PFL-70V RX55257DPL
Description 32K X 8 STANDARD sram, 120 ns, PDSO28
MOS DIGITAL INTEGRATED CIRCUIT 马鞍山数字集成电
32,768 WORD-8 BIT STATIC RAM 32,768字,8位静态RAM
32,768-WORD BY 8-BIT STATIC RAM

File Size 497.79K  /  13 Page

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    MSM27C3202CZ

OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
Part No. MSM27C3202CZ
Description 2097152-Word x 16-Bit or 4194304-Word x 8-Bit One Time PROM
2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit One Time PROM 2097152字16位或4194304字8位一次性可编程

File Size 85.55K  /  12 Page

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