|
|
 |
Infineon
|
Part No. |
BFP740F
|
OCR Text |
silicon germanium rf transistor* ? high gain ultra low noise rf transistor ? provides outstanding performance for a wide rang e of wireless applications up to 10 ghz ? ideal for cdma and wlan applications ? outstanding noise figure ... |
Description |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package
|
File Size |
32.25K /
4 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Sirenza Microdevices Inc
|
Part No. |
SGA-7489
|
OCR Text |
...s DC. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a darlington pair topology with resistive feedback for broadband per... |
Description |
Amplifier, Other - Datasheet Reference From old datasheet system
|
File Size |
566.89K /
8 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Arizona Microtek
|
Part No. |
AZ100EP16DR1 AZ100EP16DR2
|
OCR Text |
... microtek, inc. features ? silicon-germanium for high speed operation ? 150ps typical propagation delay ? internal input pulldown resistors ? functionally equivalent to on semiconductor mc10ep16 & mc100ep16 descr... |
Description |
3.0 V-3.6 V, ECL/PECL differential receiver
|
File Size |
162.72K /
6 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|