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  power-mesfet Datasheet PDF File

For power-mesfet Found Datasheets File :: 1430    Search Time::1.468ms    
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    CREE[Cree, Inc]
Part No. CRF24010D
OCR Text Power MESFET Die Cree's CRF24010 is a silicon carbide (SiC) RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher sa...
Description 10 W SiC RF Power MESFET Die

File Size 724.75K  /  8 Page

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    MRFIC1804

MOTOROLA[Motorola, Inc]
Part No. MRFIC1804
OCR Text ...g for Maximum Flexibility * Low Power Consumption = 24 mW (Typ) * Single Bias Supply = 2.7 to 3.3 V * Low LO Power Requirement = - 5 dBm (Ty...MESFET low noise amplifier and a single ended MESFET mixer. The LNA design conserves bias current th...
Description 1.8 GHz LOW NOISE AMPLIFIER AND DOWNMIXER GaAs MONOLITHIC INTEGRATED CIRCUIT

File Size 80.59K  /  6 Page

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    NE850R599A NE850R59

California Eastern Labs
NEC
Part No. NE850R599A NE850R59
OCR Text POWER GaAs MESFET NE850R599A FEATURES * HIGH OUTPUT POWER: 0.5 W * HIGH LINEAR GAIN: 9.5 dB * HIGH EFFICIENCY (PAE): 38% * SUPERIOR INTERMODULATION DISTORTION * INDUSTRY STANDARD PACKAGING OUTLINE DIMENSIONS (Units in mm) PACKAGE OU...
Description C-BAND MEDIUM POWER GaAs MESFET

File Size 18.25K  /  2 Page

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    NE850010000 NE8500199 NE8500100

California Eastern Labs
NEC[NEC]
Part No. NE850010000 NE8500199 NE8500100
OCR Text POWER GaAs MESFET NE8500100 NE8500199 FEATURES * HIGH OUTPUT POWER: 1 W * HIGH LINEAR GAIN: 9.0 dB * HIGH EFFICIENCY: 37% (PAE) * INDUSTRY STANDARD PACKAGING * THIS DEVICE IS ALSO AVAILABLE AS A TWO-CELL CHIP: NE8500100 ABSOLUTE MAXIMU...
Description C-BAND MEDIUM POWER GaAs MESFET

File Size 59.39K  /  4 Page

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    NE960R27501 NE960R275

NEC[NEC]
Part No. NE960R27501 NE960R275
OCR Text POWER GaAs MESFET NE960R275 FEATURES * HIGH OUTPUT POWER: 25.0 dBm TYP @ P1 dB * HIGH LINEAR GAIN: 9.0 dB TYP @ 14.5 GHz * HIGH EFFICIENCY: 35% TYP @ 14.5 GHz * HIGH RELIABILITY * CLASS A OPERATION OUTLINE DIMENSIONS (Units in mm)...
Description 0.2W X, Ku-BAND POWER GaAs MESFET

File Size 25.54K  /  3 Page

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    MRFIC2403

Motorola, Inc
Part No. MRFIC2403
OCR Text Power Amplifier The MRFIC2403 is a two-stage class B GaAs power amplifier in a low-cost 16 lead plastic package designed for use in the 2.4...MESFET IC process. The RF MESFETs are power, depletion mode devices and, therefore, require negative...
Description 2.4 GHz POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT

File Size 98.65K  /  6 Page

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    NE650049600

NEC
Part No. NE650049600
OCR Text POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS (TC= 25 C unless otherwise noted) SYMBOLS VDSX VGDX VGSX IDS IGS PT TCH TSTG PARAMETERS Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current Gate Current T...
Description L&S BAND MEDIUM POWER GaAs MESFET

File Size 29.46K  /  2 Page

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    MA01502D

Tyco Electronics
Part No. MA01502D
OCR Text Power Handling Capability 50 Input Impedance Preliminary Release Balanced Two Stage LNA with Limiter * * Excellent Return Loss Self-Aligned MSAG(R) MESFET Process DESCRIPTION The MA01502D is a balanced, two-stage low noise a...
Description Limiter/Low Noise Amplifier Die Preliminary Release 8.5 - 12.0 GHz

File Size 53.11K  /  5 Page

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    MA01502D1

Tyco Electronics
Part No. MA01502D1
OCR Text ...Drain Current (Max at Pin= 10W) Power Handling (CW up to 30 minutes) Symbol f Gn P1dB IRL ORL NF IDD IGG ITOI IDMAX PRF 13 13 Minimum 8.5 12 Typical 14 20 20 20 2.7 130 4 13 40+IDD 10 3.5 160 10 Maximum 12.0 18 Units GHz dB dBm dB dB dB mA ...
Description X-Band Limiter/Low Noise Amplifier 8.5 -12.0 GHz

File Size 315.29K  /  6 Page

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