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  POE21-120H Datasheet PDF File

For POE21-120H Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

    INFINEON[Infineon Technologies AG]
Part No. SIDC30D120H6 C67047-A2206-A001
Description Fast switching diode chip in EMCON-Technology
File Size 206.59K  /  4 Page

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Toshiba Electronic Devices & Storage Corporation
Part No. TRS15N120HB
Description SiC Schottky Barrier Diode (SBD), 1200 V, 15 A, 2 in 1, TO-247
Tech specs 　 　

Official Product Page

HUA FENG CIRCUIT





    INFINEON[Infineon Technologies AG]
Part No. SIDC42D120H6 Q67050-A4099-A102
Description Fast switching diode chip in EMCON-Technology
File Size 275.60K  /  4 Page

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Toshiba Electronic Devices & Storage Corporation
Part No. TRS10N120HB
Description SiC Schottky Barrier Diode (SBD), 1200 V, 10 A, 2 in 1, TO-247
Tech specs 　 　

Official Product Page

   
Part No. WF1M32B-100G2TM5 WF1M32B-100G2TC5 WF1M32B-100G2TI5 WF1M32B-120HI5 WF1M32B-100HI5
Description x32 Flash EEPROM Module
File Size 401.44K  /  13 Page

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Toshiba Electronic Devices & Storage Corporation
Part No. TRS30N120HB
Description SiC Schottky Barrier Diode (SBD), 1200 V, 30 A, 2 in 1, TO-247
Tech specs 　 　

Official Product Page

    Q67050-A4112-A001 SIDC10D120H6

INFINEON[Infineon Technologies AG]
Part No. Q67050-A4112-A001 SIDC10D120H6
Description Fast switching diode chip in EMCON-Technology
File Size 81.84K  /  4 Page

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Toshiba Electronic Devices & Storage Corporation
Part No. TRS10H120H
Description SiC Schottky Barrier Diode (SBD), 1200 V, 10 A, TO-247-2L
Tech specs 　 　

Official Product Page

    INFINEON[Infineon Technologies AG]
Part No. SIDC06D120H6 Q67050-A4150-A001
Description Fast switching diode chip in EMCON-Technology
File Size 65.53K  /  4 Page

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Toshiba Electronic Devices & Storage Corporation
Part No. TRS15H120H
Description SiC Schottky Barrier Diode (SBD), 1200 V, 15 A, TO-247-2L
Tech specs 　 　

Official Product Page

    PIP208H1 PIP8.4H3 PIP120H1 PIP24H1 PIP8.4H1 PIP250H1 PIP8.4H2

ProTek Devices
Therm-O-Disc, Inc.
Microsemi, Corp.
Part No. PIP208H1 PIP8.4H3 PIP120H1 PIP24H1 PIP8.4H1 PIP250H1 PIP8.4H2
Description 15000 W, BIDIRECTIONAL, SILICON, TVS DIODE
7500 W, BIDIRECTIONAL, SILICON, TVS DIODE
File Size 93.87K  /  2 Page

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Toshiba Electronic Devices & Storage Corporation
Part No. TRS40N120HB
Description SiC Schottky Barrier Diode (SBD), 1200 V, 40 A, 2 in 1, TO-247
Tech specs 　 　

Official Product Page

    INFINEON[Infineon Technologies AG]
Part No. SIDC01D120H6 Q67050-A4171-A001
Description Fast switching diode chip in EMCON-Technology
File Size 65.31K  /  4 Page

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Toshiba Electronic Devices & Storage Corporation
Part No. TRS20H120H
Description SiC Schottky Barrier Diode (SBD), 1200 V, 20 A, TO-247-2L
Tech specs 　 　

Official Product Page

    ZXTN04120HFF ZXTN04120HFFTA

Diodes Incorporated
Part No. ZXTN04120HFF ZXTN04120HFFTA
Description 120V, SOT23F, NPN medium power Darlington transistor
File Size 433.27K  /  8 Page

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Toshiba Electronic Devices & Storage Corporation
Part No. TRS20N120HB
Description SiC Schottky Barrier Diode (SBD), 1200 V, 20 A, 2 in 1, TO-247
Tech specs 　 　

Official Product Page

    MRF7S35120HSR3

Freescale Semiconductor, Inc
Part No. MRF7S35120HSR3
Description RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
File Size 461.92K  /  11 Page

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Toshiba Electronic Devices & Storage Corporation
Part No. TRS40H120H
Description SiC Schottky Barrier Diode (SBD), 1200 V, 40 A, TO-247-2L
Tech specs 　 　

Official Product Page

    Motorola
Part No. MRF7S35120HSR3
Description RF Power Field Effect Transistor
File Size 494.53K  /  11 Page

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Toshiba Electronic Devices & Storage Corporation
Part No. TRS30H120H
Description SiC Schottky Barrier Diode (SBD), 1200 V, 30 A, TO-247-2L
Tech specs 　 　

Official Product Page

For POE21-120H Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

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