n channel mos type rf power mo pdf Datasheet P13 Description --- IC-ON-LINE


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n channel mos type rf power mo Datasheet PDF File

For n channel mos type rf power mo Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |

				Mitsubishi Electric Semiconductor
Part No.	CM1200HA-34H
Description	1200 A, 1700 V, n-CHAnnEL IGBT HIGH power SWITCHInG USE InSULATED type
File Size	44.59K / 4 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	GT60M303 EE07978
Description	n CHAnnEL mos type (HIGH power SWITCHInG APPLICATIOnS) From old datasheet system
File Size	278.73K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. powerEX[powerex power Semiconductors]
Part No.	CM1200HB-66H
Description	HIGH power SWITCHInG USE InSULATED type 1200 A, 3300 V, n-CHAnnEL IGBT
File Size	50.20K / 4 Page	View it Online	Download Datasheet

				powerex, Inc. powerEX[powerex power Semiconductors]
Part No.	CM400DY-66H
Description	HIGH power SWITCHInG USE InSULATED type 400 A, 3300 V, n-CHAnnEL IGBT
File Size	42.85K / 4 Page	View it Online	Download Datasheet

				Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
Part No.	2SK2467-Y 2SK2467 E001484
Description	n CHAnnEL mos type (HIGH power AMPLIFIER APPLICATIOnS) From old datasheet system
File Size	91.78K / 1 Page	View it Online	Download Datasheet

				powerex, Inc. powerEX[powerex power Semiconductors]
Part No.	CM600E2Y-34H
Description	HIGH power SWITCHInG USE InSULATED type 600 A, 1700 V, n-CHAnnEL IGBT
File Size	44.60K / 4 Page	View it Online	Download Datasheet

				powerEX InC Mitsubishi Electric Semiconductor Mitsubishi Electric Corporation
Part No.	CM1200HG-66H
Description	1200 A, 3300 V, n-CHAnnEL IGBT HIGH power SWITCHInG USE InSULATED type
File Size	63.95K / 7 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	MG50G2DM1
Description	From old datasheet system SILICOn n CHAnnEL mos type mosFET power module
File Size	332.78K / 5 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	UPD30100GC-40-7EA
Description	Transmitter; Package: PG-TSSOP-16; Frequency Band: 315.0 MHz; Channel Requirements per Band: Single Channel; modulation type: ASK / FSK; Transmit power (at 3V): 5.0 dBm; Temperature Range: -40.0 - 125.0 °C Transmitter; Package: PG-TSSOP-16; Frequency Band: 315.0 MHz; Channel Requirements per Band: Single Channel; modulation type: ASK / FSK; Transmit power (at 3V): 5.0 dBm; Temperature Range: -40.0 - 125.0 °C 64位微处理
File Size	2,872.70K / 52 Page	View it Online	Download Datasheet

				意法半导 ST Microelectronics STMICROELECTROnICS[STMicroelectronics]
Part No.	STP40nF03L P40nF03L
Description	niobium Oxide Capacitor; Capacitor type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:niobium Oxide; Capacitance:150uF; Capacitance n-CHAnnEL power mosFET n - CHAnnEL 30V - 0.020 ohm - 40A TO-220 STripFET power mosFET
File Size	80.96K / 8 Page	View it Online	Download Datasheet

For n channel mos type rf power mo Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |