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  ma 500 Datasheet PDF File

For ma 500 Found Datasheets File :: 170733    Search Time::3.578ms    
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    2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518

NEC[NEC]
NEC Corp.
Part No. 2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
OCR Text ...2 30 150 150 -65 to + 150 V V V ma mW C C Caution: Electrostatic Sensitive Device Document No. P10394EJ2V0DS00 (2nd edition) (Previous...500 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 3 V hFE - DC Current Gain 200 100 50 20 10 ...
Description Discrete
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 49.94K  /  8 Page

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    2SC5018

PANASONIC[Panasonic Semiconductor]
Matsshita / Panasonic
Part No. 2SC5018
OCR Text ... 0.2 Collector current IC (ma) 20 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 hFE -- IC IC/IB=10 200 VCE=5V Base to em...
Description Transistor
Silicon NPN triple diffusion planer type(For high breakdown voltage high-speed switching)

File Size 35.44K  /  2 Page

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    2SC5019

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5019
OCR Text ... 80 1 150 -55 ~ +150 Unit V V V ma W C C 1:Base 2:Collector 3:Emitter EIAJ:SC-62 Mini Power Type Package marking Symbol VCBO VCEO VEBO ...500 Transition frequency fT (GHz) 10 30 100 10 400 Ta=75C 300 25C 200 -25C 100 8 Ta=...
Description Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

File Size 37.02K  /  2 Page

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    2SC5022

HITACHI[Hitachi Semiconductor]
Part No. 2SC5022
OCR Text ...40 2 150 -55 to +150 Unit V V V ma ma W C C Electrical Characteristics (Ta = 25C) Item Collector cutoff current Collector cutoff current...500 1000 2000 5000 Collector to Emitter Voltage VCE (V) ic(peak) I C max 1 shot pulse Ta = 25 C ms ...
Description Silicon NPN Triple Diffused

File Size 33.36K  /  7 Page

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    2SC829 2SC829B 2SC829C

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PANASONIC[Panasonic Semiconductor]
Panasonic Corporation
Part No. 2SC829 2SC829B 2SC829C
OCR Text ...0 400 150 -55 ~ +150 Unit V V V ma mW C C 13.50.5 5.10.2 0.45 -0.1 1.27 +0.2 0.45 -0.1 1.27 +0.2 123 2.30.2 2.54...500 12 Ta=25C 450 10 IB=100A 80A 8 60A 6 40A 50 2SC829 IC -- VCE 60 VCE=10V IC -- VBE Col...
Description Silicon NPN epitaxial planer type(For high-frequency amplification)
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30ma I(C) | TO-92
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay

File Size 54.87K  /  3 Page

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    2SD1010

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PANASONIC[Panasonic Semiconductor]
Part No. 2SD1010
OCR Text ... 0.45 -0.1 1.27 +0.2 V ma ma mW C C 123 2.30.2 V 2.540.15 1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A s ...500 160 Ta=25C 140 400 100 25C Ta=75C 80 -25C 2SD1010 IC -- VCE 120 VCE=10V IC -- VBE Col...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 37.40K  /  2 Page

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    2SD1022

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1022
OCR Text ... 0 0 100 Base Current IB [ma] Base-Emitter Voltage VBE [V] 0.8 2SD1022 10 Switching Time - IC ts Switching Time tSW [s] ton 1 tf IB1 = 0.001IC IB2 = 0.001IC VBB2 = 4V VCC = 50V Tc = 25C 0 1 2 3 4 5 Co...
Description Darlington Transistor(5A NPN)

File Size 273.90K  /  8 Page

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    2SD1023

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1023
OCR Text ...rement 0 Base Current IB [ma] Base-Emitter Voltage VBE [V] 0.8 2SD1023 10 Switching Time - IC ts Switching Time tSW [s] tf 1 ton IB1 = 0.002IC IB2 = 0.002IC VBB2 = 4V VCC = 50V Tc = 25C 0 1 2 3 4 5 Collecto...
Description Darlington Transistor(5A NPN)

File Size 290.46K  /  9 Page

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    2SD1024

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1024
OCR Text ...toff Current V = 100V I max 0.1 ma CBO CB V = 100V I max 0.1 CEO CE Emitter Cutoff Current I max 5 ma EB EBO V = 7V DC Current Gain h V = 3V, I = 5A Min 1,500 FE CE C max 30,000 Collector to Emitter Saturation 5A V (sat) I = Voltage max 1.5...
Description Darlington Transistor(8A NPN)

File Size 275.54K  /  8 Page

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    2SD1025

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1025
OCR Text ...toff Current V = 200V I max 0.1 ma CBO CB V = 200V I max 0.1 CEO CE Emitter Cutoff Current I max 5 ma EB EBO V = 7V DC Current Gain h V = 3V, I = 5A Min 1,500 FE CE C max 30,000 Collector to Emitter Saturation 5A V (sat) I = Voltage max 1.5...
Description Darlington Transistor(8A NPN)

File Size 343.47K  /  8 Page

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