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TOSHIBA
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Part No. |
GT15J321
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Description |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power switching Applications fast switching Applications
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File Size |
175.02K /
7 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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Part No. |
PBSS5520X PBSS5520X-15
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Description |
20 V, 5 A PNP low vcesat (BISS) transistor 20伏,5安PNP型低饱和压降BISS)晶体管 20 V, 5 A PNP low vcesat (BISS) transistor PNP low vcesat (BISS) transistor 20 V, 5 A
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File Size |
121.26K /
13 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Sem... Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RM400HV-34S
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Description |
CAP CER 22000PF 10% 50V X8R 0805 HIGH speED switching USE INSULATED TYPE fast Recovery Diode Modules, F Series (for IGBT speed switching)
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File Size |
68.61K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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