id-3.1a pdf Datasheet P13 Full Text Search --- IC-ON-LINE


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id-3.1a Datasheet PDF File

For id-3.1a Found Datasheets File :: 193 Search Time::2.125ms
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				International Rectifier
Part No.	IRF3703 IRF3703PBF
OCR Text	...SS 30V RDS(on) max 2.8m ID 210A TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C P...31A 54A 76A 4000 RG 20V tp D .U .T IA S + V - DD A 3000 0 .0 1 2000 Fig...
Description	30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A? Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A) Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?) Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
File Size	93.04K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305L IRF5305S
OCR Text	...S = -55V RDS(on) = 0.06 G ID = -31A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switc...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	167.31K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	...S = -55V RDS(on) = 0.06 G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with t...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLI2910
OCR Text	... = 100V RDS(on) = 0.026 G ID = 31A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switch...
Description	HEXFET Power MOSFET
File Size	140.03K / 8 Page	View it Online	Download Datasheet

				NTE Electronics, Inc.
Part No.	NTE2980
OCR Text	...Maximum Ratings: Drain Current, ID Continuous (VGS = 5V) TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....31A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description	Dual Channel, 1/1, 25Mbps Digital Isolator 8-SOIC -40 to 125 Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch
File Size	23.79K / 3 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFP3703
OCR Text	... 30V RDS(on) max 0.0028 ID 210A TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @...31A 54A 76A 4000 RG 20V tp D .U .T IA S + V - DD A 3000 0 .0 1 2000 Fig...
Description	30V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=30V, Rds(on)max=0.0028ohm, Id=210A?
File Size	235.02K / 8 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE2981
OCR Text	...Maximum Ratings: Drain Current, ID Continuous (VGS = 5V) TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....31A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description	Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch
File Size	23.93K / 3 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APTML20UM18R010T1AG
OCR Text	ID = 109A* @ Tc = 25C Application * Electronic load dedicated to power supplies and battery discharge testing Features * * * * * Linear ...31A @ TC=80C to not exceed the shunt specification. In saturation mode These Devices are sensiti...
Description	Linear MOSFET Power Module
File Size	102.06K / 3 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLI2203N 2308
OCR Text	...S = 30V RDS(on) = 0.007 G ID = 61A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques ...31A --- V VDS = VGS, ID = 250A --- S VDS = 25V, I D = 60A 25 VDS = 30V, VGS = 0V A 250 VDS = 24V, V...
Description	30V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package HEXFET? Power MOSFET From old datasheet system
File Size	109.46K / 8 Page	View it Online	Download Datasheet

For id-3.1a Found Datasheets File :: 193 Search Time::2.125ms
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