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ghz-2.170 Datasheet PDF File

For ghz-2.170 Found Datasheets File :: 3921 Search Time::5.547ms
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				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10053
OCR Text	GHz GOLDMOS (R) Field Effect Transistor Description The PTF 10053 is a 12-watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and ...
Description	12 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor 12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor
File Size	79.85K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10111
OCR Text	GHz GOLDMOSTM Field Effect Transistor Description The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to ...2 1 0 0.0 0.1 0.2 0.3 0.4 0.5 A-12 3456 9820 1011 1 VDD = 28V IDQ = 75 mA f = 1.5 GHz Inpu...
Description	6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor 6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor
File Size	336.82K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10133
OCR Text	... MHz DUT PTF 10133 0.040 l 894 GHz 0.096 l 894 GHz 0.098 l 894 GHz 0.073 l 894 GHz 0.107 l 894 GHz 0.110 l 894 GHz 0.250 l 894 GHz 0.081 l ...2 pF ATC 100 B Capacitor, 0.1 mF, 50 V Digi-Key P4525-ND Capacitor, 100 mF, 50 V Digi-Key P5182-ND C...
Description	85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85瓦，860-960兆赫GOLDMOS场效应晶体管 85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
File Size	176.20K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10137
OCR Text	GHz GOLDMOSTM Field Effect Transistor Description The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier applications to...2 0.4 0.6 0 Input Power (Watts) Package 20244 RF Specifications (100% Tested) Character...
Description	12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 12瓦，1.0 GHz的GOLDMOS场效应晶体管 12 Watts 1.0 GHz GOLDMOS Field Effect Transistor
File Size	174.57K / 6 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SC5184 2SC5184-T1 2SC5184-T2
OCR Text	... @ VCE = 2 V, IC = 3 mA, f = 2 GHz @ VCE = 1 V, IC = 3 mA, f = 2 GHz (Units: mm) 2.1 0.1 1.25 0.1 * Super Mini-Mold package EIAJ: SC-70 2.0 0.2 0.3+0.1 -0 0.65 0.65 ORDERING INFORMATION PART NUMBER 2SC5184-T1 2 T86 3...
Description	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
File Size	57.03K / 12 Page	View it Online	Download Datasheet

				Advanced Semiconductor
Part No.	ASI10514
OCR Text	...E = 32 V VCE = 5.0 V VCC = 28 V GHz IC = 5.0 A POUT = 100 W f = 1.2 to 1.4 MINIMUM TYPICAL MAXIMUM 65 65 3.5 20 15 6.0 50 --- UNITS V V V mA --dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLL...
Description	NPN SILICON RF POWER TRANSISTOR
File Size	16.74K / 1 Page	View it Online	Download Datasheet

				Advanced Semiconductor
Part No.	ASI10637
OCR Text	...C = 100 mA f = 1.0 MHz f = 1.68 GHz f = 200 MHz f = 1.68 GHz MINIMUM TYPICAL MAXIMUM 20 40 3.0 100 25 250 5.0 25 2500 700 UNITS V V V A --pF % MHz mW A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HO...
Description	NPN SILICON RF POWER TRANSISTOR
File Size	16.07K / 1 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BAT15-02L BAT15-02V BAT15-04W BAT15-05W BAT15 BAT15-099R BAT15-03W BAT15-099
OCR Text	GHz, phase detectors and modulators Low noise figure 1 BAT15-02L/V BAT15-03W BAT15-04W 3 BAT15-05W 3 BAT15-099 4 3 BAT15-099R 4 3 2 D1 D2 D1 D2 D1 D2 D1 D3 D4 D2 1 2 1 2...
Description	Schottky Diodes - Silicon RF Schottky diode for DBS mixer applications up to 12 GHz RESISTOR,SMD1206,1K,1/4W,5% Silicon Schottky Diodes 硅肖特基二极
File Size	525.60K / 10 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BAT15-099 BAT1599 Q62702-A66
OCR Text	GHz q Low noise figure q Low barrier type q ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 15-099...2) Symbol VR IF Ptot Tstg Top Values 4 110 100 - 55 ... + 150 Unit V mA mW - 55 ... + 15...
Description	Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Low barrier type) From old datasheet system
File Size	143.31K / 4 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
Part No.	MMBR521LT1 MRF5211LT1
OCR Text	...lifiers for operation up to 3.5 GHz. Also usable in applications requiring fast switching times. * High Current Gain-Bandwidth Product -- fT = 3.4 GHz (Typ) @ IC = - 35 mAdc (MMBR521LT1) fT = 4.2 GHz (Typ) @ IC = - 50 mAdc (MRF5211LT1) * Lo...
Description	HIGH-FREQUENCY TRANSISTOR PNP SILICON
File Size	151.95K / 8 Page	View it Online	Download Datasheet

For ghz-2.170 Found Datasheets File :: 3921 Search Time::5.547ms
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