|
|
 |
Samsung Electronic
|
Part No. |
STDH90
|
OCR Text |
...ted. stdh90 i/o family features dual gate oxide process to support mixed-voltage designs without reducing reliability. these mixed-voltage designs interfaces between 5-volt and 3.3 volts. to better support a system-on-a-chip design style, ... |
Description |
0.35 Micron STDH90 Library Introduction
|
File Size |
39.38K /
21 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Atmel
|
Part No. |
ATL60
|
OCR Text |
... with Set and Reset 1x Inverter Dual 1x Inverters Quad 1x Inverters Quad Tristate Inverter 2x Inverter 2x Tristate Inverter with Active-high...Gate Signal LATCH with High-drive Complementary Outputs Site Count(1)
24 8 16 16 9 11 9 12 6 10 2... |
Description |
The ATL60 series CMOS Gate Arrays are fabricated using a 0.6 micron drawn gate, oxide isolated, triple level metal process. Extensive cell libraries are available and support the major CAD software tools.
|
File Size |
109.90K /
14 Page |
View
it Online |
Download Datasheet
|
|
|
 |
NXP Semiconductors N.V.
|
Part No. |
BF996S215
|
OCR Text |
dual-gate mos-fet
april 1991 2 nxp semiconductors product specification n-channel dual-gate mos-fet bf996s features ? protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. applicat... |
Description |
|
File Size |
54.16K /
8 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|