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Shanghai Lunsure Electronic... Chenyi Electronics CHENYI[Shanghai Lunsure Electronic Tech] 上海朗硕科技有限公司 Shanghai LUNSURE Electronic Technology Co., Ltd. 涓?捣???绉???????? Shanghai Lunsure Electr...
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Part No. |
MMBZ5235B MMBZ5250B MMBZ5243B MMBZ5252B MMBZ5245B MMBZ5240B MMBZ5226B MMBZ52 MMBZ5254B MMBZ5257B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5230B MMBZ5231B MMBZ5232B MMBZ5233B MMBZ5234B MMBZ5236B MMBZ5237B MMBZ5238B MMBZ5239B MMBZ5241B MMBZ5242B MMBZ5244B MMBZ5246B MMBZ5247B MMBZ5248B MMBZ5249B MMBZ5251B MMBZ5253B MMBZ5255B MMBZ5256B MMBZ52-SERIES
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Description |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 11 V. Test current 20.0 mA. Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 10 V. Test current 20.0 mA. Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 8.7 V. Test current 20.0 mA. Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 7.5 V. Test current 20.0 mA. Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 4.3 V. Test current 20.0 mA. 3-26V Dual Operational Amplifier, Ta = -40 to 105°C; Package: 8 LEAD PDIP; No of Pins: 8; Container: Rail; Qty per Container: 50 5-30V Single Comparator, Ta = -25 to 85°C- Pb-free; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Rail; Qty per Container: 98 2-36V Dual Comparator, Ta= -40 to 125°C; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Rail; Qty per Container: 98 0.5A, 5V, 52kHz Buck PWM Switching Regulator; Package: 8 LEAD PDIP; No of Pins: 8; Container: Rail; Qty per Container: 50 表面贴装稳压二极 3-26V Quad Operational Amplifier, Ta= -40 to 105°C - Pb-free; Package: SOIC 14 LEAD; No of Pins: 14; Container: Tape and Reel; Qty per Container: 2500 表面贴装稳压二极 Small Signal Bias Resistor Transistor SC75 NPN 50V; Package: SC-75 (SOT-416) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Ultra High Speed Switching diode SC88; Package: SC-88/SC70-6/sot-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 6.2 V. Test current 20.0 mA. Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 5.6 V. Test current 20.0 mA. SURFACE MOUNT zener diodeS
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File Size |
20.84K /
1 Page |
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it Online |
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
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Part No. |
K4H560838E-GCCC K4H560438E-GCC4 K4H560438E-GCCC K4H560838E-GCC4
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Description |
diode zener SINGLE 300mW 27Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-23 3K/REEL 256Mb的电子芯片的DDR 400内存规格60Ball FBGA封装(x4/x8 diode zener SINGLE 300mW 29.8Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-23 3K/REEL 256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
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File Size |
195.42K /
18 Page |
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it Online |
Download Datasheet |
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ON Semiconductor
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Part No. |
BZX84C2V4LT1D BZX84CXXXLT1 BZX84BXXXLT1 BZX84CXXXLT1G BZX84BXXXLT1G BZX84CXXXLT3 BZX84BXXXLT3 BZX84B4V7LT1 BZX84C4V3LT3G BZX84C5V6LT3G BZX84BXXXLT3G BZX84C18LT1G ONSEMICONDUCTOR-BZX84C36LT3G SZBZX84C13LT1 SZBZX84C33LT1 SZBZX84C15LT1G SZBZX84B12LT1G SZBZX84B16LT1G SZBZX84B4V7LT1G SZBZX84B5V1LT1G SZBZX84B5V6LT1G SZBZX84B6V2LT1G SZBZX84B6V8LT1G SZBZX84B8V2LT1G
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Description |
zener Voltage Regulators 225 mW SOT−23 Surface Mount zener diode 225 mW 4.3 V ±5%SOT-23; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 10000 4.3 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR diode, TO-236AB zener diode 225 mW 5.6 V ±5%SOT-23; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 10000 5.6 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR diode, TO-236AB zener Voltage Regulators 18 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR diode, TO-236AB 13 V, 0.225 W, SILICON, BIDIRECTIONAL VOLTAGE REGULATOR diode, TO-236AB 33 V, 0.225 W, SILICON, BIDIRECTIONAL VOLTAGE REGULATOR diode, TO-236AB
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File Size |
169.08K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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