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  die cell Datasheet PDF File

For die cell Found Datasheets File :: 3095    Search Time::2.671ms    
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    Atmel, Corp.
Part No. K8P2815UQB-DC4C0
OCR Text die page nor specification * samsung electronics reserves the right to change products or specification without notice. information in thi...cell array bank 0 address bank 1 address bank 0 cell array x dec y dec latch & control bank 3 cell a...
Description 8M X 16 FLASH 2.7V PROM, 65 ns, PBGA64 13 X 11 MM, 1 MM PITCH, FBGA-80/64

File Size 871.83K  /  56 Page

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    Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
Part No. CY14B104K-ZSP25XI CY14B104K-ZSP15XI CY14B104M-ZSP15XI CY14B104K-ZS15XIT CY14B104M-ZS15XI CY14B104K-ZSP25XCT CY14B104K-ZSP25XIT
OCR Text ...his pin is not connected to the die. we input write enable input, active low. when selected low, data on the io pins is written to the addr...cell. these are a sram memory cell and a nonvolatile quantumtrap cell. the sram memory cell operates...
Description Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 25ns; Supply Voltage: 3V; Temperature Range: -40&deg; to 85&deg;C; Package: 54-TSOP-II ; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO54
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 15ns; Supply Voltage: 3V; Temperature Range: -40&deg; to 85&deg;C; Package: 54-TSOP-II ; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 15 ns, PDSO54
Non-Volatile Static RAM (nvSRAM); Organization: 256x16; Density: 4MB; Speed: 15ns; Supply Voltage: 3V; Temperature Range: -40&deg; to 85&deg;C; Package: 54-TSOP-II ; Features: Real-Time Clock 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO54
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 15ns; Supply Voltage: 3V; Temperature Range: -40&deg; to 85&deg;C; Package: 44-TSOP-II; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 15 ns, PDSO44
Non-Volatile Static RAM (nvSRAM); Organization: 256x16; Density: 4MB; Speed: 15ns; Supply Voltage: 3V; Temperature Range: -40&deg; to 85&deg;C; Package: 44-TSOP-II ; Features: Real-Time Clock 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO44
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 25ns; Supply Voltage: 3V; Temperature Range: 0&deg; to 70&deg;C; Package: 54-TSOP-II; Features: Real-Time Clock
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 25ns; Supply Voltage: 3V; Temperature Range: -40&deg; to 85&deg;C; Package: 54-TSOP-II; Features: Real-Time Clock

File Size 553.36K  /  29 Page

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    LV4904V

Sanyo Semicon Device
Part No. LV4904V
OCR Text ...ew bottom view top view exposed die-pad 23 22 24 21 25 20 26 19 27 18 28 17 29 16 30 15 31 14 32 13 33 12 34 11 35 10 36 9 37 8 38 7 39 6 40...cell power supply 16 out_ch2_p o output pin, channel 2 (rch) + 16 gnd pvd 17 boot_ch2_p i...
Description Class-D Audio Power Amplifier

File Size 536.23K  /  25 Page

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    NEC, Corp.
Part No. EA-C10
OCR Text ... i/o density to achieve smaller die sizes special power rail structure, multi-oxide process t mixed 2.5v / true 3.3v i/o for full system compatibility cell-based i/o structure including lvds, hstl, gtl+, pci t flexible adaptation to syste...
Description CMOS Embedded Array (ASIC)(CMOS 嵌入式阵 嵌入式阵列(专用集成电路)的CMOS(嵌入式阵列的CMOS

File Size 54.90K  /  8 Page

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    Sensitron Semiconductor
Part No. SEN-R-1050-010 SEN-R-1050-026 SEN-R-1050-027 SEN-R-1050-022 SENSITRONSEMICONDUCTOR-SEN-R-1050-028 SENSITRONSEMICONDUCTOR-SEN-R-1050-015
OCR Text ... watt series glass passivated die/cell features description 5000w peak pulse power dissipation glass passivated junction low incremental surge resistance excellent clamping capability repetition rate (duty...
Description TRANSIENT VOLTAGE SUPPRESSOR 5000 WATT SERIES GLASS PASSIVATED die/cell 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

File Size 65.28K  /  4 Page

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    Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
Part No. CY14B104L-BA15XCT CY14B104L-BA15XI
OCR Text ...8 mbit. nc pin not connected to die. 3. address expansion for 16 mbit. nc pin not connected to die. v ss dq6 dq5 dq4 v cc a 13 dq3 a 12 dq2 ...cell. they are an sram memory cell and a nonvolatile quantumtrap cell. the sram memory cell operates...
Description 4 Mbit (512K x 8/256K x 16) nvSRAM 512K X 8 NON-VOLATILE SRAM, 15 ns, PBGA48

File Size 501.55K  /  23 Page

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    ACTF512K32 ACT-F512K32N-060F5C ACT-F512K32N-060F5I ACT-F512K32N-060F5M ACT-F512K32N-060F5Q ACT-F512K32N-060F5T ACT-F512K

AEROFLEX[Aeroflex Circuit Technology]
Part No. ACTF512K32 ACT-F512K32N-060F5C ACT-F512K32N-060F5I ACT-F512K32N-060F5M ACT-F512K32N-060F5Q ACT-F512K32N-060F5T ACT-F512K32N-060P3C ACT-F512K32N-060P3I ACT-F512K32N-060P3M ACT-F512K32N-060P3Q ACT-F512K32N-060P3T ACT-F512K32N-060P7C ACT-F512K32N-060P7I ACT-F512K32N-060P7M ACT-F512K32N-060P7Q ACT-F512K32N-060P7T ACT-F512K32N-070F5C ACT-F512K32N-070F5I ACT-F512K32N-070F5M ACT-F512K32N-070F5Q ACT-F512K32N-070F5T ACT-F512K32N-070P3C ACT-F512K32N-070P3I ACT-F512K32N-070P3M ACT-F512K32N-070P3Q ACT-F512K32N-070P3T ACT-F512K32N-070P7C ACT-F512K32N-070P7I ACT-F512K32N-070P7M ACT-F512K32N-070P7Q ACT-F512K32N-070P7T ACT-F512K32N-090F5C ACT-F512K32N-090F5I ACT-F512K32N-090F5M ACT-F512K32N-090F5Q ACT-F512K32N-090F5T ACT-F512K32N-090P3C ACT-F512K32N-090P3I ACT-F512K32N-090P3M ACT-F512K32N-090P3Q ACT-F512K32N-090P3T ACT-F512K32N-090P7C ACT-F512K32N-090P7I ACT-F512K32N-090P7M ACT-F512K32N-090P7Q ACT-F512K32N-090P7T ACT-F512K32N-120F5C ACT-F512K32N-120F5I ACT-F512K32N-120F5M ACT-F512K32N-120F5Q ACT-F512K32N-120F5T ACT-F512K32N-120P3C ACT-F512K32N-120P3I ACT-F512K32N-120P3M ACT-F512K32N-120P3Q ACT-F512K32N-120P3T ACT-F512K32N-120P7C ACT-F512K32N-120P7I ACT-F512K32N-120P7M ACT-F512K32N-120P7Q ACT-F512K
OCR Text die in One MCM www.aeroflex.com Package TTL Compatible Inputs and CMOS Outputs Access Times of 60, 70, 90, 120 and 150ns +5V Progra...cell margin. Typically, each sector can be programmed and verified in less than one second. Erase is...
Description ACT-F512K32 High Speed 16 Megabit FLASH Multichip Module

File Size 233.24K  /  20 Page

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    AM29F200

Advanced Micro Devices
Part No. AM29F200
OCR Text ...pin so 48-pin tsop known good die (kgd) (see publication number 21257) n compatible with jedec standards pinout and software compatible w...cell margin. device erasure occurs by executing the erase command sequence. this initiates the embe...
Description 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only/ Boot Sector Flash Memory

File Size 253.31K  /  39 Page

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    CY14E256LA-SZ25XI CY14E256LA-SZ25XIT CY14E256LA-SZ45XI CY14E256LA-SZ45XIT

Cypress Semiconductor
Part No. CY14E256LA-SZ25XI CY14E256LA-SZ25XIT CY14E256LA-SZ45XI CY14E256LA-SZ45XIT
OCR Text ...his pin is not connected to the die. notes 1. address expansion for 1-mbit. nc pin not connected to die. 2. address expansion for 2-mbit. n...cell. they are an sram memory cell and a nonvolatile quantumtrap cell. the sram memory cell operates...
Description 256-Kbit (32 K × 8) nvSRAM

File Size 689.86K  /  19 Page

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    MMA6519KW MMA6519KWR2 MMA6525KW MMA6525KWR2 MMA6527KW MMA6527KWR2 MMA65XX

Freescale Semiconductor, Inc
Part No. MMA6519KW MMA6519KWR2 MMA6525KW MMA6525KWR2 MMA6527KW MMA6527KWR2 MMA65XX
OCR Text ...de for analog circuitry. 17 pad die attach pad this pin is the die attach flag, and is internally connected to v ss . reference section 5...cell stops) x/y-axis, any range positive/negative g g-cell_clip 500 560 600 g (19) sensor freescal...
Description Dual-Axis SPI Inertial Sensor

File Size 1,215.31K  /  56 Page

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For die cell Found Datasheets File :: 3095    Search Time::2.671ms    
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