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Atmel, Corp.
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Part No. |
K8P2815UQB-DC4C0
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OCR Text |
die page nor specification * samsung electronics reserves the right to change products or specification without notice. information in thi...cell array bank 0 address bank 1 address bank 0 cell array x dec y dec latch & control bank 3 cell a... |
Description |
8M X 16 FLASH 2.7V PROM, 65 ns, PBGA64 13 X 11 MM, 1 MM PITCH, FBGA-80/64
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File Size |
871.83K /
56 Page |
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Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
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Part No. |
CY14B104K-ZSP25XI CY14B104K-ZSP15XI CY14B104M-ZSP15XI CY14B104K-ZS15XIT CY14B104M-ZS15XI CY14B104K-ZSP25XCT CY14B104K-ZSP25XIT
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OCR Text |
...his pin is not connected to the die. we input write enable input, active low. when selected low, data on the io pins is written to the addr...cell. these are a sram memory cell and a nonvolatile quantumtrap cell. the sram memory cell operates... |
Description |
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 25ns; Supply Voltage: 3V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II ; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO54 Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 15ns; Supply Voltage: 3V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II ; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 15 ns, PDSO54 Non-Volatile Static RAM (nvSRAM); Organization: 256x16; Density: 4MB; Speed: 15ns; Supply Voltage: 3V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II ; Features: Real-Time Clock 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO54 Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 15ns; Supply Voltage: 3V; Temperature Range: -40° to 85°C; Package: 44-TSOP-II; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 15 ns, PDSO44 Non-Volatile Static RAM (nvSRAM); Organization: 256x16; Density: 4MB; Speed: 15ns; Supply Voltage: 3V; Temperature Range: -40° to 85°C; Package: 44-TSOP-II ; Features: Real-Time Clock 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO44 Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 25ns; Supply Voltage: 3V; Temperature Range: 0° to 70°C; Package: 54-TSOP-II; Features: Real-Time Clock Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 25ns; Supply Voltage: 3V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II; Features: Real-Time Clock
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File Size |
553.36K /
29 Page |
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NEC, Corp.
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Part No. |
EA-C10
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OCR Text |
... i/o density to achieve smaller die sizes special power rail structure, multi-oxide process t mixed 2.5v / true 3.3v i/o for full system compatibility cell-based i/o structure including lvds, hstl, gtl+, pci t flexible adaptation to syste... |
Description |
CMOS Embedded Array (ASIC)(CMOS 嵌入式阵 嵌入式阵列(专用集成电路)的CMOS(嵌入式阵列的CMOS
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File Size |
54.90K /
8 Page |
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Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
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Part No. |
CY14B104L-BA15XCT CY14B104L-BA15XI
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OCR Text |
...8 mbit. nc pin not connected to die. 3. address expansion for 16 mbit. nc pin not connected to die. v ss dq6 dq5 dq4 v cc a 13 dq3 a 12 dq2 ...cell. they are an sram memory cell and a nonvolatile quantumtrap cell. the sram memory cell operates... |
Description |
4 Mbit (512K x 8/256K x 16) nvSRAM 512K X 8 NON-VOLATILE SRAM, 15 ns, PBGA48
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File Size |
501.55K /
23 Page |
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it Online |
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