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71a Datasheet PDF File

For 71a Found Datasheets File :: 148 Search Time::2.641ms
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				IRF[International Rectifier]
Part No.	IRLBA1304 IRLBA1304P
OCR Text	... (mJ) 1 5V 2500 ID 41A 71a BOTTOM 100A TOP VDS L D R IV E R 2000 RG 20V tp D .U .T IA S 1500 + V - DD A 1000 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit 500 0 25 50 75 100 125 150 17...
Description	HEXFET? Power MOSFET
File Size	103.65K / 8 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M60JN
OCR Text	71a 0.06O "UL Recognized" File No. E145592 (S) ISOTOP(R) POWER MOS IV (R) MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source...
Description	POWER MOS IV 500V 71a 0.060 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	60.22K / 4 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	IRF2807
OCR Text	... j ds(on) v = i = gs d 10v 71a irf2807 www.freescale.net.cn 3 / 7 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical ...
Description	HEXFET Power MOSFET
File Size	284.71K / 8 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AON6922
OCR Text	... 25v i d (at v gs =10v) 71a 85a r ds(on) (at v gs =10v) <3.8m w <1.4m w r ds(on) (at v gs = 4.5v) <4.8m w <1.8m w 100% uis tested 100% rg tested symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg parameter ...
Description	25V Dual Asymmetric N-Channel MOSFET
File Size	385.03K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3706 IRF3706L IRF3706S
OCR Text	...eristics 1000 2.0 ID = 71a R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 C TJ = 175 C 1.5 100 1.0 0.5 10 2.5 V DS = 15V 20s PULSE WIDTH 3.5 4.5 5.5 6.5 ...
Description	Power MOSFET(Vdss=20V/ Rds(on)max=8.5mohm/ Id=77A) Power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77A) Power MOSFET(Vdss=20V Rds(on)max=8.5mohm Id=77A)
File Size	143.52K / 11 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BYC10D-600 BYC10D-600-15
OCR Text	...t j(init) =25c; see figure 3 -71a t p = 10 ms; sine-wave pulse; t j(init) =25c; see figure 3 -65a t stg storage temperature -40 150 c t j junction temperature - 150 c byc10d-600 all information provided in this document is subject to ...
Description	Hyperfast power diode 600 V, SILICON, RECTIFIER DIODE, TO-220AC
File Size	328.09K / 11 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BYC10DX-600 BYC10DX-600-15
OCR Text	...t j(init) =25c; see figure 3 -71a t stg storage temperature -40 150 c t j junction temperature - 150 c fig 1. forward power dissipation as a function of average forward current; square waveform; maximum values fig 2. forward power dissi...
Description	Hyperfast power diode 600 V, SILICON, RECTIFIER DIODE, TO-220AC
File Size	330.11K / 12 Page	View it Online	Download Datasheet

				Microsemi, Corp.
Part No.	APT50M50JLL
OCR Text	...300 71 50 3200 apt50m50jll 500v 71a 0.050 w g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com usa 405 s.w. columbia street bend,...
Description	Volts:500V RDS(ON):0.05Ohms ID(cont:)79Amps\|MOSFETs 电压00V电压的RDS（ON）：0.05Ohms编号（续：）七九安培\| MOSFET
File Size	69.46K / 2 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2807
OCR Text	...eristics 1000 3.0 ID = 71a RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 TJ = 25 C TJ = 175 C 2.0 100 1.5 1.0 0.5 10 4.0 V DS = 25V 20s PULSE WIDTH 5.0...
Description	Power MOSFET(Vdss=75V, Id=82A?) Power MOSFET(Vdss=75V, Id=82A)
File Size	149.88K / 8 Page	View it Online	Download Datasheet

				NXP
Part No.	PH2625L
OCR Text	... unclamped inductive load; i d =71a; t p = 0.1 ms; v dd 25 v; r gs =50 w ; v gs = 10 v; starting at t j =25 c - 250 mj e ds(al)r repetitive drain-source avalanche energy unclamped inductive load; i d = 7.1 a; t p = 0.01 ms; v dd 25 v; r ...
Description	N-channel TrenchMOS-TM logic level FET
File Size	146.21K / 13 Page	View it Online	Download Datasheet

For 71a Found Datasheets File :: 148 Search Time::2.641ms
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