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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT40G121
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Description |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance inverter Switching Applications TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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File Size |
139.45K /
5 Page |
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it Online |
Download Datasheet
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International Rectifier
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Part No. |
350PEQ50W 350PEQ90W 350PEQ60W 350PEQ110W 350PEQ100W 350PEQ120W 350PEQ70W 350PEQ80W
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Description |
V(rrm/drm): 500V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 900V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 600V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 1100V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 1000V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 1200V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 700V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 800V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
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File Size |
311.65K /
6 Page |
View
it Online |
Download Datasheet
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Price and Availability
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