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  50v-0.03-30a Datasheet PDF File

For 50v-0.03-30a Found Datasheets File :: 238    Search Time::3.406ms    
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    SGW50N60HS SGW50N60HS09

Infineon Technologies AG
Part No. SGW50N60HS SGW50N60HS09
OCR Text ...ergy single pulse IC = 50A, VCC=50V, RGE=25 start TJ=25C Gate-emitter voltage static transient (tp<1s, D<0.05) Short circuit withstand time2) VGE = 15V, VCC 600V, Tj 150C Power dissipation TC = 25C Operating junction and storage temperatu...
Description High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

File Size 348.42K  /  11 Page

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    IRFB3207ZGPBF

International Rectifier
Part No. IRFB3207ZGPBF
OCR Text ...- --- S nC Conditions VDS = 50V, ID = 75A ID = 75A VDS = 38V VGS = 10V ID = 75A, VDS =0V, VGS = 10V VDD = 49V ID = 75A RG = 2.7 VGS = 10...0.033mH RG = 25, IAS = 102A, VGS =10V. Part not recommended for use above this value. ISD 75A, ...
Description HEXFETPower MOSFET

File Size 284.81K  /  8 Page

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    SGP30N60HS SGP30N60HS09

Infineon Technologies AG
Part No. SGP30N60HS SGP30N60HS09
OCR Text ...ergy single pulse IC = 20A, VCC=50V, RGE=25 start TJ=25C Gate-emitter voltage static transient (tp<1s, D<0.05) Short circuit withstand time2) VGE = 15V, VCC 600V, Tj 150C Power dissipation TC = 25C Operating junction and storage temperatu...
Description High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

File Size 382.64K  /  12 Page

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    IRFB4110GPBF

International Rectifier
Part No. IRFB4110GPBF
OCR Text ...- --- --- Conditions VDS = 50V, ID = 75A ID = 75A VDS = 50V VGS = 10V --- 150 35 43 1.3 25 67 78 88 9620 670 250 820 950 --- 210 ...0.033mH RG = 25, IAS = 108A, VGS =10V. Part not recommended for use above this value. ISD 75A, ...
Description HEXFET Power MOSFET

File Size 301.65K  /  8 Page

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    IRFB4310GPBF

International Rectifier
Part No. IRFB4310GPBF
OCR Text ...- --- S nC Conditions VDS = 50V, ID = 75A ID = 75A VDS = 80V VGS = 10V VDD = 65V ID = 75A RG = 2.6 VGS = 10V VGS = 0V VDS = 50V = 1.0MH...0.35mH RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value. ISD 75A, di/dt...
Description HEXFETPower MOSFET

File Size 284.21K  /  8 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. ISL9K30120 ISL9K30120G3
OCR Text ... I = 1A L = 40mH R < 0.1 VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV VAVL IL IL t0 t1 t2 t Figure 15. Avalanche Energy Test Circuit Figure 16. A...
Description 30A, 1200V Stealth?/a> Dual Diode
30A, 1200V Stealth⑩ Dual Diode
30A, 1200V Stealth Dual Diode

File Size 116.05K  /  6 Page

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    TPA12 TPA12A

List of Unclassifed Manufacturers
Part No. TPA12 TPA12A
OCR Text ...5A PEAK * HIGH VOLTAGE RATING - 50V * LOW THERMAL RESISTANCE - 1.4 oC/W *CURRENT FOLDOVER PROTECTION * EXCELLENT LINEARITY - CLASS A/B OUTPU...0.8 1.25 30 -25 0.9 1.4 +85 -55 * * * * * +125 C/W C/W C/W C Notes: *Same as previ...
Description Power Operational Amplifier

File Size 144.48K  /  5 Page

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    Infineon
Part No. G50N60HS
OCR Text ...ergy single pulse IC = 50A, VCC=50V, RGE=25 start TJ=25C Gate-emitter voltage static transient (tp<1s, D<0.05) Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature Time limited operating junctio...
Description Search --To SGW50N60HS

File Size 863.62K  /  11 Page

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    AOB2910L AOT2910L AOTF2910L

Alpha & Omega Semiconductors
Part No. AOB2910L AOT2910L AOTF2910L
OCR Text ...fer capacitance v gs =0v, v ds =50v, f=1mhz dynamic parameters gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge switching parame...0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured wit...
Description 100V N-Channel MOSFET

File Size 382.73K  /  7 Page

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For 50v-0.03-30a Found Datasheets File :: 238    Search Time::3.406ms    
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