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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. HYB3165805BTL-60 HYB3165805BTL-50 HYB3165805BTL-40 HYB3165805BT-60 HYB3165805BT-50 HYB3165805BT-40 HYB3165805BJ-60 HYB3165805BJ-50 HYB3165805BJ-40 HYB3164805BTL-60 HYB3164805BTL-50 HYB3164805BTL-40 HYB3164805BT-60 HYB3164805BT-50 HYB3164805BT-40 HYB3164805BJ-60 HYB3164805BJ-50 HYB3164805BJ-40 HYB3164805BJ
OCR Text 50/-60 HYB 3165805BJ/BT(L) -40/-50/-60 Premininary Information * * * * 8 388 608 words by 4-bit organization 0 to 70 C operating temperature Hyper Page Mode - EDO - operation Performance: -40 tRAC tCAC tAA tRC tHPC RAS access time CA...
Description 8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)

File Size 301.25K  /  29 Page

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    MACOM[Tyco Electronics]
Part No. PH1617-60
OCR Text ...TJ jc Rating 20 65 3.0 5.8 150 -50 to +150 200 1.0 Units V V V A W C C C/W F (MHz) 1600 1650 1700 Z IF () 1.5 - j3.6 1.4 - j3.1 1.5 - j2.9 Z...60 W, f = 1615, 1685 MHz VCC = 26 V, ICQ = 260 mA, POUT = 60 W, f = 1615, 1685 MHz VCC = 26 V, ICQ =...
Description Wireless Power Transistor 60 Watts/ 1615 - 1685 MHz
Wireless Power Transistor 60 Watts, 1615 - 1685 MHz

File Size 95.63K  /  2 Page

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    LP40-60

Superworld Electronics
Part No. LP40-60
OCR Text ...) 48.10 17.00 (0.669) (0.374) 9.50 40.50 (1.594) 50/60hz 3 4 2 1 7 8 6 5 6.00 (0.236) 1.00 (0.041) w l a h max. pc terminal plug-in mounting b b a. primary voltage ac 115/230 v 50/60 hz . b. no load primary current input ac 115v 60h...
Description POWER TRANSFORMER

File Size 101.50K  /  1 Page

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    Infineon
Part No. HYM324020GL-60 HYM324020GL-50 HYM324020GD-60 HYM324020GD-50 INFINEONTECHNOLOGIESAG-HYM324000GDL-60
OCR Text 50/-60 Preliminary Information * * * 72-Pin Small Outline Dual-in-Line Memory Module 4 0194 034 words by 32-bit organization Performance: tRC tRAC tCAC tAA tPC Read / Write Cycle Time RAS Access Time CAS Access Time Access Time From...
Description 4M x 32 -Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE
4M x 32 Bit DRAM Module (SO-DIMM)

File Size 52.39K  /  10 Page

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    BYM13-60 BYM13-50 SGL41-40 SGL41-30 SGL41-40-E3_96 SGL41-40-E3_97 BYM13-40-E3_96 BYM13-40-E3_97 BYM13-20 BYM13-30 BYM13-

Vishay Siliconix
Part No. BYM13-60 BYM13-50 SGL41-40 SGL41-30 SGL41-40-E3_96 SGL41-40-E3_97 BYM13-40-E3_96 BYM13-40-E3_97 BYM13-20 BYM13-30 BYM13-40 BYM13-40HE3_96 BYM13-40HE3_97 SGL41-20 SGL41-40HE3_96 SGL41-40HE3_97 SGL41-50 SGL41-60 BYM13-40-E3/96 BYM13-40-E3/97 BYM13-40HE3/96 BYM13-40HE3/97 SGL41-40-E3/97 SGL41-40-E3/96 SGL41-40HE3/96 SGL41-40HE3/97
OCR Text ... max. 1.0 A 20 V to 60 V 30 A 0.50 V, 0.70 V 125 C, 150 C MECHANICAL DATA Case: DO-213AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, m...
Description Surface Mount Schottky Barrier Rectifier

File Size 339.05K  /  4 Page

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    HYM324025GS-60 HYM324025GS-50 HYM324025S-60 HYM324025S-50 Q67100-Q2156 Q67100-Q2157 HYM324025S Q67100-Q2096

INFINEON TECHNOLOGIES AG
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. HYM324025GS-60 HYM324025GS-50 HYM324025S-60 HYM324025S-50 Q67100-Q2156 Q67100-Q2157 HYM324025S Q67100-Q2096
OCR Text 50/-60 * 4 194 304 words by 32-bit organized SIMM modules for PC main memory applications Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) Hyper page mode (E...
Description 4M x 32-Bit EDO-DRAM Module 4M X 32 EDO DRAM MODULE, 60 ns, SMA72
4M x 32-Bit EDO-DRAM Module 4米32位江户记忆体模组
4M x 32-Bit EDO-DRAM Module 4M X 32 EDO DRAM MODULE, 50 ns, SMA72
4M x 32 Bit EDO DRAM Module

File Size 51.57K  /  10 Page

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    Fujitsu Limited
Part No. MB814100C-60 MB814100C-70
OCR Text ...Value -0.5 to +7 -0.5 to +7 1.0 50 -55 to +125 Unit V V W mA C WARNING: Permanent device damage may occur if the above Absolute Maximum R...60/MB81400C-70 Fig. 1 - MB814100C DYNAMIC RAM - BLOCK DIAGRAM RAS CAS Clock Gen #1 Write Cl...
Description CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1 位快速页面存取模式动态RAM)
CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位快速页面存取模式动态RAM)

File Size 272.86K  /  24 Page

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    SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. HYM364020GS-60 HYM364020S-60 Q67100-Q982 HYM364020S Q67100-Q2006
OCR Text ...42 RAS0 44 N.C. 46 N.C. 48 DQ27 50 DQ28 52 DQ29 54 DQ30 56 DQ31 58 DQ32 60 DQ33 62 DQ34 64 N.C. 66 PD1 68 PD3 70 VSS 72 Presence Detect Pins -60 PD0 PD1 PD2 PD3 VSS N.C. N.C. N.C. Semiconductor Group 3 HYM 364020S/GS-60 4M x...
Description 4M x 36-Bit Dynamic RAM Module 4M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72
4M x 36 Bit FPM DRAM Module with Parity

File Size 52.83K  /  10 Page

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    Fujitsu Limited
Part No. MB814400C-60 MB814400C-70
OCR Text ...e -0.5 to +7.0 -0.5 to +7.0 1.0 50 -55 to +125 Unit V V W mA C WARNING: Permanent device damage may occur if the above Absolute Maximum R...60/MB814400C-70 Fig. 1 - MB814400C DYNAMIC RAM - BLOCK DIAGRAM RAS CAS Clock Gen #1 Write C...
Description CMOS 1 M ×4BIT Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM)
CMOS 1 M ×4 BIT Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM)

File Size 327.16K  /  27 Page

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    Fujitsu Limited
Part No. MB81V4100C-60 MB81V4100C-70
OCR Text ... -0.5 to +4.6 -0.5 to +4.6 1.0 -50 to +50 -55 to +125 Unit V V W mA C WARNING: Permanent device damage may occur if the above Absolute Ma...60/MB81V4100C-70 Fig. 1 - MB81V4100C DYNAMIC RAM - BLOCK DIAGRAM RAS CAS Clock Gen #1 Write...
Description CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1 位快速页面存取模式动态RAM)

File Size 240.16K  /  23 Page

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