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SAMTEC INC
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| Part No. |
LST-12-07-T-D HLST-12-07-F-D
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| OCR Text |
...) .240 (2,29) .090 (2,54) .100 (5,08) .200 (5,84) .230 (11,05) .435 no. of positions x (2,54) .100 + (0,51) .020 (2,54) .100 02 01 (2,54) ...07 02 thru 30 d 1 f-209 note: some lengths, styles and options are non-standard, non-returnable. ... |
| Description |
4 CONTACT(S), FEMALE AND MALE, STRAIGHT TWO PART BOARD CONNECTOR, SOLDER
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| File Size |
623.37K /
1 Page |
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SIEMENS AG
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| Part No. |
SPB80N06S2L-07 SPP80N06S2L-07
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| OCR Text |
...on-state resistance v gs = 4.5 v, i d = 60 a r ds(on) - 6.7 10 m ? drain-source on-state resistance v gs = 10 v, i d = 60 a r ds(on...07 spb80n06s2l-07 preliminary data electrical characteristics , at t j = 25 c, unless otherwise sp... |
| Description |
OptiMOS Power-Transistor( MOS 型功率晶体管) 的OptiMOS功率晶体管（马鞍山型功率晶体管）
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| File Size |
93.86K /
8 Page |
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SIEMENS AG
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| Part No. |
SPB80N08S2L-07 SPP80N08S2L-07
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| OCR Text |
...bondwire; with an r thjc = 0.5 k/w the chip is able to carry i d = 132a
2000-04-11 page 2 spp80n08s2l-07 spb80n08s2l-07 target data sheet thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal res... |
| Description |
OptiMOS Power-Transistor( MOS型功率晶体管)
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| File Size |
51.04K /
5 Page |
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SIEMENS AG
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| Part No. |
BAS70-07
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| OCR Text |
...10 -1 -2 10 0 10 1 10 2 10 ma 0.5 1.0 v 1.5 t a = -40 c 25 c 85 c 150 c reverse current i r = f ( v r ) t a = parameter 0 ehb000...07 oct-07-1999 4 forward current i f = f ( t a *; t s ) * package mounted on epoxy 0 0 ehb00151... |
| Description |
Silicon Schottky Diode(肖特基硅二极
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| File Size |
76.37K /
4 Page |
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it Online |
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Vishay
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| Part No. |
SUD50N03-07
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| OCR Text |
... 10 v 20 30 0.010 @ v gs = 4.5 v 16 d g s n-channel mosfet to-252 s gd top view drain connected to tab order number: sud50n03-07 absolute maximum ratings ( t a = 25 c unless otherwise noted ) parameter symbol limit unit drain-sour... |
| Description |
N-Channel Enhancement-Mode Transistor
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| File Size |
69.73K /
4 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
BGA427-07
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| OCR Text |
...stable ? gain | s 21 | 2 = 18.5 db at 1.8 ghz (appl.1) gain | s 21 | 2 = 22 db at 1.8 ghz (appl.2) i p 3out = +7 dbm at 1.8 ghz ( ...07-12 2 bga427 electrical characteristics at t a = 25 c, unless otherwise specified. parameter sy... |
| Description |
Si-MMIC-Amplifier in SIEGET 25-Technologie
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| File Size |
161.00K /
7 Page |
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it Online |
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