Part Number Hot Search : 
RL257 OXFW971 MRF7P20 74HC595D RL251 EVQP0 TD6230 Z02W91V
Product Description
Full Text Search
  420-output Datasheet PDF File

For 420-output Found Datasheets File :: 13005    Search Time::3.375ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

    APT50M50 APT50M50PVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT50M50 APT50M50PVR
OCR Text ...6 Rev - 10.92 (.430) 10.67 (.420) 4.39 (.173) 4.14 (.163) (4 Places) 12.45 (.490) 11.94 (.470) Gate Source Sense 5.33 (.210) 4.83 (.190) 11.63 (.458) 11.13 (.438) .635 (.025) .381 (.015) Dimensions in Millimeters and (I...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 74.5A 0.050 Ohm

File Size 35.96K  /  2 Page

View it Online

Download Datasheet





    APT8065BVFR APT10M11B2VR APT20M22B2VR APT8065

ADPOW[Advanced Power Technology]
Part No. APT8065BVFR APT10M11B2VR APT20M22B2VR APT8065
OCR Text ...0 150 17 70 12 11 60 12 3700 420 225 225 25 105 24 22 90 24 ns nC Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time ...OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 30 ID, DRAIN CURRENT (AMPERES) TJ = -5...
Description POWER MOS V 800V 13A 0.650 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 63.14K  /  4 Page

View it Online

Download Datasheet

    APT8065BVR APT8065 APT8065AVR

ADPOW[Advanced Power Technology]
Part No. APT8065BVR APT8065 APT8065AVR
OCR Text ...0 150 17 70 12 11 60 12 3700 420 225 225 25 105 24 22 90 24 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay T...OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 30 ID, DRAIN CURRENT (AMPERES) TJ = -5...
Description POWER MOS V 800V 13A 0.650 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.69K  /  4 Page

View it Online

Download Datasheet

    APT8065SVR

ADPOW[Advanced Power Technology]
Part No. APT8065SVR
OCR Text ...0 150 17 70 12 11 60 12 3700 420 225 225 25 105 24 22 90 24 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay T...OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 30 ID, DRAIN CURRENT (AMPERES) TJ = -5...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 800V 13A 0.650 Ohm

File Size 63.31K  /  4 Page

View it Online

Download Datasheet

    APT8065 APT8065AVR

ADPOW[Advanced Power Technology]
Part No. APT8065 APT8065AVR
OCR Text ...0 150 17 70 12 11 60 12 3700 420 225 225 25 105 24 22 90 24 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay T...OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 30 ID, DRAIN CURRENT (AMPERES) TJ = -5...
Description POWER MOS V 800V 11.5A 0.650 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.68K  /  4 Page

View it Online

Download Datasheet

    APT8067HVR

ADPOW[Advanced Power Technology]
Part No. APT8067HVR
OCR Text ...0 150 17 70 12 11 60 12 3700 420 225 225 25 105 24 22 90 24 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay T...OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 30 ID, DRAIN CURRENT (AMPERES) TJ = -5...
Description POWER MOS V 800V 11.5A 0.670 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 59.92K  /  4 Page

View it Online

Download Datasheet

    ATF-21186 ATF-21186-STR ATF-21186-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-21186 ATF-21186-STR ATF-21186-TR1
OCR Text ....840 -86 Rn/50 -- 1.633 0.639 0.420 0.302 0.209 0.138 0.088 0.047 0.025 0.022 0.042 0.088 0.174 0.301 0.471 0.715 Ga dB 15.8 14.2 13.4 12.6 11.7 10.8 9.8 9.1 8.5 8.0 7.6 7.2 7.0 6.6 6.3 6.0 5-53 ATF-21186 Typical Scattering Parameters...
Description 0.5-6 GHz General Purpose Gallium Arsenide FET

File Size 67.13K  /  8 Page

View it Online

Download Datasheet

    BC847A-7 BC847AT BC847B-7 BC847C-7 BC847BT BC847CT BC847A BC847B BC847C

Diodes Inc.
DIODES[Diodes Incorporated]
Part No. BC847A-7 BC847AT BC847B-7 BC847C-7 BC847BT BC847CT BC847A BC847B BC847C
OCR Text ...ied Symbol Min -- -- -- 110 200 420 -- -- 580 -- -- 100 -- -- Typ -- 150 270 -- 290 520 -- 700 900 660 -- -- -- -- -- Max -- -- -- 220 450 8...Output Capacitance Noise Figure Notes: BC847BT BC847CT (Note 3) (Note 3) (Note 3) (Note 3) hFE ...
Description High Speed CMOS Logic 4-to-16 Line Decoder/Demultiplexer 24-SOIC -55 to 125
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

File Size 56.50K  /  3 Page

View it Online

Download Datasheet

    BC847ALT1 BC847BLT1 BC847CLT1 BC848BLT1 BC850CLT1 BC849BLT1 BC846BLT1 BC850BLT1 BC848CLT1 BC849CLT1 BC848ALT1 BC849ALT1

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola Inc
Motorola, Inc.
Motorola Mobility Holdings, Inc.
Part No. BC847ALT1 BC847BLT1 BC847CLT1 BC848BLT1 BC850CLT1 BC849BLT1 BC846BLT1 BC850BLT1 BC848CLT1 BC849CLT1 BC848ALT1 BC849ALT1 BC850ALT1 BC846ALT1 BC846ALT1-D BC846ALT1_D BC847CLT1THRUBC850CLT1 BC846ALT1D BC846ALT1/D
OCR Text ...t) VBE(on) hFE -- -- -- 110 200 420 -- -- -- -- 580 -- 90 150 270 180 290 520 -- -- 0.7 0.9 660 -- -- -- -- 220 450 800 0.25 0.6 -- -- 700 7...Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f...
Description CASE 318-08 STYLE 6 SOT-23 (TO-236AB)
CASE 318-08, STYLE 6 SOT-23 (TO-236AB)
CASE 318-08/ STYLE 6 SOT-23 (TO-236AB)
CIR 4C 4#0 FR PIN PLUG
High Speed CMOS Logic Triple 3-Input NOR Gates 14-PDIP -55 to 125 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN Silicon General Purpose Transistors NPN硅通用晶体
High Speed CMOS Logic Dual Monostable Multivibrators with Reset 16-SOIC -55 to 125 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

File Size 220.44K  /  6 Page

View it Online

Download Datasheet

    BC847AWT1 BC847BWT1 BC847CWT1 BC848BWT1 BC846BWT1 BC848CWT1 BC848AWT1 BC846AWT1

Motorola Mobility Holdings, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
Part No. BC847AWT1 BC847BWT1 BC847CWT1 BC848BWT1 BC846BWT1 BC848CWT1 BC848AWT1 BC846AWT1
OCR Text ...t) VBE(on) hFE -- -- -- 110 200 420 -- -- -- -- 580 -- 90 150 270 180 290 520 -- -- 0.7 0.9 660 -- -- -- -- 220 450 800 0.25 0.6 -- -- 700 7...Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f...
Description CASE 419-02, STYLE 3 SOT-323/SC-70 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CASE 419-02/ STYLE 3 SOT-323/SC-70

File Size 206.89K  /  6 Page

View it Online

Download Datasheet

For 420-output Found Datasheets File :: 13005    Search Time::3.375ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of 420-output

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.81191802024841