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Vishay
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| Part No. |
SMAJ5.0
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| OCR Text |
... wy 12.2 14.9 1.0 11 1.0 19.9 20.1 smaj11a az wz 12.2 13.5 1.0 11 1.0 22.0 18.2 smaj12 bd xd 13.3 16.3 1.0 12 1.0 18.2 22.0 smaj1...5a 0.064 5a 7500 13" diameter plastic tape and reel smaj5.0ahe3/61 (1) 0.064 61 1800 7" diameter p... |
| Description |
(SMAJ5.0 - SMAJ188CA) Transient Voltage Suppressors
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| File Size |
134.22K /
6 Page |
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New Jersey Semi-Conductor
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| Part No. |
C1470
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| OCR Text |
20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2sc1470 silicon npn power tra...5a |c=15a; ib=1.5a,tc=100'c lc=15a; ib=1.5a lc=15a; ib=1.5a,tc=100'c vcev=850v;vbe(0ff)=1 .5v vcev=8... |
| Description |
2SC1470
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| File Size |
92.10K /
2 Page |
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IRF[International Rectifier]
International Rectifier, Corp.
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| Part No. |
IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
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| OCR Text |
...rage Temperature Range
Max.
20 20 77 64 308 87 61 0.59 -55 to + 175
Units
V V A W W mW/C C
Thermal Resistance
Parameter
RJC R...5A, VGS = 0V TJ = 125C, IS = 35.5A, VGS = 0V TJ = 25C, IF = 35.5A, VR=20V di/dt = 100A/s TJ = 125... |
| Description |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB
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| File Size |
123.62K /
10 Page |
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STMICROELECTRONICS
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| Part No. |
STW10NK80Z
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| OCR Text |
...=4.7 ?, v gs =10v (see figure 20) 30 20 ns ns t d(off) t f turn-off delay time fall time v dd =400 v, i d =4.5a, r g =4.7 ?, v gs =10v (see figure 20) 65 17 ns ns table 7. gate-source zener diode symbol parameter test cond ictions min.... |
| Description |
9 A, 800 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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| File Size |
425.90K /
15 Page |
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Vishay Intertechnology,Inc.
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| Part No. |
BYW54
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| OCR Text |
...pulse avalanche peak power t p =20 s half sinus wave, t j =175 c p r 1000 w pulse energy in avalanche mode, non repetitive (inductive lo...5a, i r =1a, i r =0.25a t rr 4 s y i f =1a, di/dt=5a/ s, v r =50v t rr 4 s reverse recovery ch... |
| Description |
Silicon Mesa Rectifier(????靛?600V????㈡?娴??)
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| File Size |
35.33K /
4 Page |
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Feeling Technology
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| Part No. |
FP6291 FP6291LR-G1
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| OCR Text |
...roc) 0 0.5 1 1.5 2 2.5 3 3.5 10 20 30 40 50 60 70 80 90 100 external resistance (k ? ) current limit (a) operation frequency vs. input vol...5a mosfet provides a high output voltage. the control loop architecture is peak cu rrent mode contr... |
| Description |
2.5A Step-Up Current Mode PWM Converter
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| File Size |
364.25K /
11 Page |
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it Online |
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