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  2.7-3.8ghz Datasheet PDF File

For 2.7-3.8ghz Found Datasheets File :: 965    Search Time::2.063ms    
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    United Monolithic Semic...
UMS[United Monolithic Semiconductors]
Part No. CHA7010-99 CHA7010-99F_00 CHA7010 CHA7010-99F/00
OCR Text ... 30% Symbol F_op G_lin_1 G_lin_2 G_lin_T RL_in RL_out P_sat_1 P_sat_2 P_sat_T P_1dBc_1 P_1dBc_2 PAE_sat PAE_1dBc Vc Ic Vctr Zctr Top CHA...7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 OR...
Description X-band GaInP HBT High Power Amplifier

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    Q62702-F1490 BFR180W

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1490 BFR180W
OCR Text ...ollector currents from 0.2mA to 2.5mA * fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling pre...7 0.3 0.22 0.1 - GHz pF 0.45 dB 2.1 2.25 - IC = 3 mA, VCE = 5 V, f = 500 MHz Collector-base c...
Description NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)
From old datasheet system

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    BFS482 Q62702-F1573

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFS482 Q62702-F1573
OCR Text ...FS 482 RGs Q62702-F1573 1/4 = B 2/5 = E 3/6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Parameter Coll...7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 \ -1 0 10 0 -7 ...
Description NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA.)
From old datasheet system

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    EC3H04C 1224

Sanyo Semicon Device
Sanyo Electric Co., Ltd.
Part No. EC3H04C 1224
OCR Text ... (0.6mm) leadless package. 0.2 0.05 0.2 3 0.05 4 1.0 2 1 0.3 (Bottom View) 0.05 1 : Base 2 : Emitter 3 : Colle...7 2.5 1.5 Conditions Ratings min typ max 1.0 10 180 GHz pF pF dB dB dB Unit A A Any and all SANYO...
Description NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier and OSC Applications
From old datasheet system
High-Frequency Low-Noise Amplifier and OSC Applications 高频低噪声放大器和OSC应用

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    MAXIM[Maxim Integrated Products]
Part No. MAX2645EVKIT MAX2645_1 MAX2645 MAX26451
OCR Text ... noise figure performance (NF = 2.3dB, IIP3 = +4dBm). A few minor component changes configure the device as a low-noise amplifier with highe...7 RADIAL STUB* 40 294 TLINE mil s LEQUIV = 1.5nH 5 C2 220pF R1 BIAS RFOUT 8 VCC C9 10...
Description Evaluation Kit for the MAX2645
From old datasheet system

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    Maxim
Part No. MAX2645
OCR Text ...Modes) Gain: +14.4dB/-9.7dB NF: 2.3dB/15.5dB Input IP3: +4dBm/+13dBm Supply Current: 9.2mA/2.7mA o Highly Versatile Application Receive Path...7 14.9/-10.7 15.2/-9.7 NF (dB) 2.3/15.5 2.6/16 2.6/16 IIP3 (dBm) +4/+13 +10/+15.5 +11.8/+16.2 ...
Description 3.4GHz to 3.8GHz SiGe Low-Noise Amplifier/ PA Predriver
From old datasheet system

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    MAX3866 MAX3866E_D MAX3866E/D

Maxim Integrated Products, Inc.
Maixm
Part No. MAX3866 MAX3866E_D MAX3866E/D
OCR Text 2.5Gbps, +3.3V Combined Transimpedance/Limiting Amplifier General Description The MAX3866 combined transimpedance preamplifier and limitin...7.8Ap-p) o Overdrive Capability Better than +1.4dBm (2.5mAp-p) o Single +3.3V or +5V Supply o 165mW ...
Description 2.5Gbps, 3.3V Combined Transimpedance/Limiting Amplifier

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    PHILIPS[Philips Semiconductors]
Part No. SA620DK SA620
OCR Text ...K Package LNA ENABLE 1 LNA GND 2 LNA IN 3 LNA GND 4 LNA GND 5 20 VCC 19 LNA GND 18 LNA OUT 17 LNA BIAS 16 MIXER IN 15 MIXER GND 14 MIXER BY...7 8 * Internal VCO automatic leveling loop * Monotonic VCO frequency vs control voltage OSC1 ...
Description Low voltage LNA mixer and VCO - 1GHz
Low voltage LNA, mixer and VCO - 1GHz

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    MICREL[Micrel Semiconductor]
Part No. SY100EL31Z SY10EL31 SY10EL31ZC SY10EL31ZCTR SY100EL31ZCTR SY100EL31ZC
OCR Text 2.8GHz toggle frequency Internal 75K input pull-down resistors Available in 8-pin SOIC package DESCRIPTION The SY10/100EL31 are D flip-f...7 6 5 VCC Q Q VEE Q S R CLK TRUTH TABLE(1) SOIC TOP VIEW D L H X X X S L L H L H R L L L H...
Description D FLIP-FLOP WITH SET AND RESET

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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. CLY15 Q62702-L99
OCR Text ...For frequencies from 400 MHz to 2.5 GHz * Operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8 GHz typ. 31.5 dBm * Efficiency better 50% S D S G ESD: Electrostatic discharge sensitive device, observe handling precautions! ...
Description GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管(功率放大器,对于00兆赫2.5千兆赫频率的移动电话
From old datasheet system

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For 2.7-3.8ghz Found Datasheets File :: 965    Search Time::2.063ms    
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