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United Monolithic Semic... UMS[United Monolithic Semiconductors]
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Part No. |
CHA7010-99 CHA7010-99F_00 CHA7010 CHA7010-99F/00
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OCR Text |
... 30% Symbol
F_op G_lin_1 G_lin_2 G_lin_T RL_in RL_out P_sat_1 P_sat_2 P_sat_T P_1dBc_1 P_1dBc_2 PAE_sat PAE_1dBc Vc Ic Vctr Zctr Top
CHA...7
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 OR... |
Description |
X-band GaInP HBT High Power Amplifier
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File Size |
156.54K /
7 Page |
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it Online |
Download Datasheet |
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MAXIM[Maxim Integrated Products]
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Part No. |
MAX2645EVKIT MAX2645_1 MAX2645 MAX26451
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OCR Text |
... noise figure performance (NF = 2.3dB, IIP3 = +4dBm). A few minor component changes configure the device as a low-noise amplifier with highe...7 RADIAL STUB* 40 294 TLINE mil s LEQUIV = 1.5nH
5 C2 220pF R1
BIAS
RFOUT
8
VCC C9 10... |
Description |
Evaluation Kit for the MAX2645 From old datasheet system
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File Size |
228.46K /
4 Page |
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it Online |
Download Datasheet |
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Maxim
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Part No. |
MAX2645
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OCR Text |
...Modes) Gain: +14.4dB/-9.7dB NF: 2.3dB/15.5dB Input IP3: +4dBm/+13dBm Supply Current: 9.2mA/2.7mA o Highly Versatile Application Receive Path...7 14.9/-10.7 15.2/-9.7
NF (dB) 2.3/15.5 2.6/16 2.6/16
IIP3 (dBm) +4/+13 +10/+15.5 +11.8/+16.2
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Description |
3.4GHz to 3.8GHz SiGe Low-Noise Amplifier/ PA Predriver From old datasheet system
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File Size |
263.98K /
12 Page |
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it Online |
Download Datasheet |
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PHILIPS[Philips Semiconductors]
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Part No. |
SA620DK SA620
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OCR Text |
...K Package
LNA ENABLE 1 LNA GND 2 LNA IN 3 LNA GND 4 LNA GND 5 20 VCC 19 LNA GND 18 LNA OUT 17 LNA BIAS 16 MIXER IN 15 MIXER GND 14 MIXER BY...7 8
* Internal VCO automatic leveling loop * Monotonic VCO frequency vs control
voltage
OSC1 ... |
Description |
Low voltage LNA mixer and VCO - 1GHz Low voltage LNA, mixer and VCO - 1GHz
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File Size |
330.13K /
11 Page |
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it Online |
Download Datasheet |
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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Part No. |
CLY15 Q62702-L99
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OCR Text |
...For frequencies from 400 MHz to 2.5 GHz * Operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8 GHz typ. 31.5 dBm * Efficiency better 50%
S D S G
ESD:
Electrostatic discharge sensitive device, observe handling precautions!
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Description |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管(功率放大器,对于00兆赫2.5千兆赫频率的移动电话 From old datasheet system
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File Size |
59.12K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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