117a pdf Datasheet P13 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : R5505 EN29LV 2N541 BCD25 2SD19 G1975M L6423AT BCR16
	Product Description
	Full Text Search

117a Datasheet PDF File

For 117a Found Datasheets File :: 8109 Search Time::1.671ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |

				ONSEMI[ON Semiconductor]
Part No.	MC74HC573A MC74HC573ADT MC74HC573ADTR2 MC74HC573ADW MC74HC573ADWR2 MC74HC573AN MCB74HC573ADTR2 MCB74HC573ADW MCB74HC573ADWR2
OCR Text	...E OUTPUT ENABLE 2 3 4 5 6 7 8 9 11 1 PIN 20 = VCC PIN 10 = GND 19 18 17 16 15 14 13 12 Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7 NONINVERTING OUTPUTS PIN ASSIGNMENT OUTPUT ENABLE D0 D1 D2 D3 D4 D5 D6 D7 GND 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12...
Description	Octal 3-State Noninverting Transparent Latch
File Size	199.85K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MUN5216 MUN5216DW1T1 MUN5211 MUN5215 MUN5215DW MUN5215DW1T1 MUN5213 MUN5213DW1T1 MUN5230 MUN5230DW1T1 MUN5231 MUN5231DW1T1 MUN5232 MUN5232DW1T1 MUN5233 MUN5234 MUN5234DW1T1 MUN5235 MUN5235DW1 MUN5235DW1T1 MUN5212 MUN5212DW1T1 MUN5214 MUN5214DW1T1 MUN5211DW1T1 MUN52XXDW1T1 MUN5233DW1T1 MUN5236DW1T1 MUN5237DW1T1 MUN5211DW1 MUN5212DW1 MUN5214DW1 MUN5231DW1
OCR Text	...OLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://onsemi.com 6 MUN5211DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5213DW1T1 10 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , ...
Description	Dual Bias Resistor Transistors
File Size	151.63K / 20 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SGP20N60HS SGW20N60HS
OCR Text	...TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=20A, RG=16, Dynamic test circuit in Figure E) TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter thr...
Description	High Speed IGBT in NPT-technology
File Size	429.45K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SKW20N60 Q67040-S4242
OCR Text	...Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 20A, RG = 1 6) Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a func...
Description	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
File Size	272.85K / 14 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPA20N60C3 SPB20N60C3 SPI20N60C3 SPP20N60C3
OCR Text	... V DD=480V, ID=20.7A - 11 33 87 5.5 114 - nC V DD=480V, ID=20.7A, V GS=0 to 10V V(plateau) V DD=480V, ID=20.7A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be...
Description	Cool MOS Power Transistor Cool MOS& Power Transistor Cool MOS™ Power Transistor Cool MOS Power Transistor
File Size	311.60K / 14 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPP20N60CFD
OCR Text	... 2.4 V 3 QGate VSD 11 Avalanche SOA IAR = f (tAR) par.: T j 150 C 20 12 Avalanche energy EAS = f (T j) par.: ID = 10 A, V ...7A 1800 18 Typ. reverse recovery charge Qrr = f(ID) parameter: di/dt = 100 A/s 1800 C C 160...
Description	for lowest Conduction Losses & fastest Switching Cool MOS Power Transistor Cool MOS⑩ Power Transistor
File Size	164.33K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPW20N60C3
OCR Text	...g VDD=480V, ID=20.7A - 11 33 87 5.5 114 - nC VDD=480V, ID=20.7A, VGS=0 to 10V V(plateau) VDD=480V, ID=20.7A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is ...
Description	for lowest Conduction Losses & fastest Switching Cool MOS™ Power Transistor Cool MOS Power Transistor
File Size	255.94K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPW20N60CFD
OCR Text	... 2.4 V 3 QGate VSD 11 Avalanche SOA IAR = f (tAR) par.: T j 150 C 20 12 Avalanche energy EAS = f (T j) par.: ID = 10 A, V ...7A 1800 18 Typ. reverse recovery charge Qrr = f(ID) parameter: di/dt = 100 A/s 1800 C C 160...
Description	Cool MOSPower Transistor 酷马鞍山⑩功率晶体管 Cool MOS?/a> Power Transistor Cool MOS Power Transistor Cool MOS⑩ Power Transistor for lowest Conduction Losses & fastest Switching
File Size	161.83K / 12 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	SSD2025 SSD2025TF
OCR Text	...stance vs. Drain Current 01 .4 11 0 Fig 4. Source-Drain Forward Voltage RDS(on) , [ ] Drain-Source On-Resistance 01 .2 01 .0 V =. V GS 4 5 00 .8 IDR , Reverse Drain Current [A] 10 0 1 0 oC 5 2 oC 5 1 -1 0 00 .6 ...
Description	Dual N-CHANNEL POWER MOSFET 60V N-Channel Dual Power MOSFET
File Size	180.83K / 5 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	TS3V912 TS3V912AI TS3V912BI TS3V912I -TS3V912IN
OCR Text	...-inverting Input 2 V CC 1/11 TS3V912 SCHEMATIC DIAGRAM (1/2 TS3V912) VCC Non-inverting Input Inte rnal Vre f Inverting In...7a : Phase Margin versus Supply Voltage PHASE MARGIN, m (Degrees) 60 50 40 30 20 Figure 7b : P...
Description	3V RAIL TO RAIL CMOS DUAL OPERATIONAL AMPLIFIER IC-DUAL RAIL/RAIL AM
File Size	116.60K / 11 Page	View it Online	Download Datasheet

For 117a Found Datasheets File :: 8109 Search Time::1.671ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |