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SGS Thomson Microelectronics
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| Part No. |
STP4NC80ZFP
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| OCR Text |
... iii mosfet (1)i sd 4a, di/dt 100a/ m s, v dd v (br)dss ,t j t jmax . (*)pulse width limited by maximum temperature allowed to-220 1 2 3...800v < 2.8 w 4a stb4nc80z-1 800v < 2.8 w 4a symbol parameter value unit stp(b)4nc80z(-1) stp4nc80zfp... |
| Description |
N-CHANNEL 800v 2.4 OHM 4A TO-220 TO-220FP I2PAK ZENER PROTECTED POWERMESH III MOSFET
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| File Size |
124.18K /
11 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AOT5N100
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| OCR Text |
...4.2 5.5 6.8 m c i f =5a,di/dt=100a/ m s,v ds =100v body diode reverse recovery charge i f =5a,di/dt=100a/ m s,v ds =100v turn-off fall tim...800v i d =5a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance ch... |
| Description |
1000V,4A N-Channel MOSFET
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| File Size |
392.38K /
6 Page |
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SIEMENS AG
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| Part No. |
SGB15N120
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| OCR Text |
...t 1v 10v 100v 1000v 0.1a 1a 10a 100a dc 1ms 200 s 50 s 15 s t p =2 s f , switching frequency v ce , collector - emitter voltage figure...800v, v ge = +15v/0v, r g = 33 ? ) figure 2. safe operating area ( d = 0, t c = 25 c, t j ... |
| Description |
Fast S-IGBT in NPT-technology( NPT技术中的快S-IGBT) 快速的S -不扩散核武器条约IGBT的技术(不扩散技术中的快速第S - IGBT的)
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| File Size |
415.74K /
12 Page |
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it Online |
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ST Microelectronics
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| Part No. |
P6NC80
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| OCR Text |
...ure 150 c (1)i sd 5.4a, di/dt 100a/s, v dd v (br)dss ,t j t jmax . (*)pulse width limited by maximum temperature allowed to-220 1 2 3 to-220fp 1 2 3 i2pak (tabless to-220) 1 3 d2pak
stp6nc80z/fp/stp6nc80z-1 2/13 thermal data avalanc... |
| Description |
Search --To STP6NC80
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| File Size |
442.14K /
13 Page |
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it Online |
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