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  10.9a Datasheet PDF File

For 10.9a Found Datasheets File :: 5356    Search Time::1.36ms    
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    AOTF9N90

Alpha & Omega Semiconductors
Part No. AOTF9N90
OCR Text ...000 bv dss / ? tj 0.9 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3.4 4 4.5 v r ds(on) 1 1.3 w g fs...9a gate source charge static drain-source on-resistance v gs =10v, i d =4.5a maximum body-diode puls...
Description 900V, 9A N-Channel MOSFET

File Size 292.68K  /  5 Page

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    AON7826

Alpha & Omega Semiconductors
Part No. AON7826
OCR Text ... pf r g 0.8 1.7 2.6 w q g (10v) 10 12.5 15 nc q g (4.5v) 4.5 6 7.5 nc q gs 1 nc q gd 2 nc t d(on) 3 ns t r 7.5 ns t d(off) 20 ns t f 6 ns t ...9a, di/dt=500a/ m s maximum body-diode continuous current input capacitance output capacitance turn-...
Description 20V Dual N-Channel MOSFET

File Size 226.02K  /  6 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AON7826
OCR Text ... pf r g 0.8 1.7 2.6 w q g (10v) 10 12.5 15 nc q g (4.5v) 4.5 6 7.5 nc q gs 1 nc q gd 2 nc t d(on) 3 ns t r 7.5 ns t d(off) 20 ns t f 6 ns t ...9a, di/dt=500a/ m s maximum body-diode continuous current input capacitance output capacitance turn-...
Description 20V Dual N-Channel MOSFET

File Size 377.06K  /  6 Page

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    AP09N70P-H AP09N70P-H-14

Advanced Power Electronics Corp.
Advanced Power Electron...
Part No. AP09N70P-H AP09N70P-H-14
OCR Text ...d(off) turn-off delay time r g =10 , v gs =10v - 56 - ns t f fall time r d =34 -24- ns c iss input capacitance v gs =0v - 2660 - pf c oss o...9a, v gs =0v - - 1.5 v notes: 1.pulse width limited by maximum junction temperature. 2.starting t j ...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fast Switching Characteristics

File Size 61.02K  /  4 Page

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    IRF7322D1PBF

International Rectifier
Part No. IRF7322D1PBF
OCR Text ... t 10sec. www.irf.com 1 10/12/04 IRF7322D1PbF MOSFET Electrical Characteristics @ TJ = 25C (unless otherwise specified) Paramet...9A 0.098 VGS = -2.7V, ID = -1.5A -- V VDS = VGS, ID = -250A -- S VDS = -10V, ID = -1.5A -1.0 VDS ...
Description    FETKY MOSFET / Schottky Diode

File Size 185.89K  /  8 Page

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    AP09N70R-A-HF AP09N70R-A-HF-14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP09N70R-A-HF AP09N70R-A-HF-14
OCR Text ...urrent v ds =650v, v gs =0v - - 10 ua drain-source leakage current (t j =125 o c) v ds =520v , v gs =0v - - 500 ua i gss gate-source leakag...9a - 44 - nc q gs gate-source charge v ds =480v - 11 - nc q gd gate-drain ("miller") charge v gs =10...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 94.45K  /  4 Page

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    AP09N70R09 AP09N70R-14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP09N70R09 AP09N70R-14
OCR Text ...d(off) turn-off delay time r g =10 , v gs =10v - 56 - ns t f fall time r d =34 -24- ns c iss input capacitance v gs =0v - 2660 - pf c oss o...9a, v gs =0v - - 1.5 v notes: 1.pulse width limited by maximum junction temperature. 2.starting t j ...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 94.10K  /  4 Page

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    KI4532DY

Guangdong Kexin Industrial Co.,Ltd
Part No. KI4532DY
OCR Text ...surface mounted on fr4 board, t 10 sec. 62.5 -55to150 i d p d pin configuration www.kexin.com.cn 2 smd type ic smd type transistors electr...9a n-ch 0.043 0.065 v gs =-10v,i d = -2.5a p-ch 0.066 0.085 v gs =4.5v,i d = 3.1a n-ch 0.075 0.095 v...
Description N- and P-Channel 30-V (D-S) MOSFET

File Size 54.10K  /  2 Page

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    Microsemi, Corp.
MICROSEMI POWER PRODUCTS GROUP
Part No. APT17F80S APT17F80B
OCR Text ... 300 0 .22 6.2 10 1.1 parameter continuous drain current @ t c = 25c continuous drain current @ t c = 100c pulsed ...9a. 3 pulse test: pulse width < 380s, duty cycle < 2%. 4 c o(cr) is defned as a fxed cap...
Description Power FREDFET; Package: D3 [S]; ID (A): 18; RDS(on) (Ohms): 0.58; BVDSS (V): 800; 18 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET
18 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD

File Size 342.41K  /  4 Page

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