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For 10 1000 Found Datasheets File :: 171975 Search Time::4.703ms
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				HITACHI[Hitachi Semiconductor]
Part No.	2SC5022
OCR Text	... EBO hFE VCE (sat) Min -- -- -- 10 -- Typ -- -- -- -- -- Max 10 100 10 -- 5.0 V Unit A A A Test conditions VCE = 1500 V, RBE = 0 VCE = 1500 ...1000 2000 5000 Collector to Emitter Voltage VCE (V) ic(peak) I C max 1 shot pulse Ta = 25 C ms =1 s...
Description	Silicon NPN Triple Diffused
File Size	33.36K / 7 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC5026
OCR Text	... 80 80 5 120 60 0.15 0.85 120 10 2 2.50.1 +0.25 Unit A V V V 340 0.3 1.2 V V MHz 20 pF Pulse measurement ...1000 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob -- VC...
Description	Silicon NPN epitaxial planer type(For low-frequency output amplification)
File Size	36.23K / 2 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC5032
OCR Text	...3.20.1 9.90.3 2.90.2 4.10.2 8.00.2 Solder Dip 13.7-0.2 +0.5 High-speed switching High collector to base voltage VCBO Wide ...1000 VCE=5V 100 fT -- IC VCE=10V f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V...
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
File Size	57.59K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC5034
OCR Text	...3.20.1 9.90.3 2.90.2 4.10.2 8.00.2 Solder Dip High collector to emitter VCEO High-speed switching Full-pack package with outstan...1000 IC/IB=5 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C 100C hFE -- IC 1000 VCE=5V 300 10...
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
File Size	58.16K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC5035
OCR Text	... VEBO ICP IC IB PC Tj Tstg 4.10.2 8.00.2 Solder Dip High-speed switching High collector to base voltage VCBO Low collector to emitter ...1000 IC/IB=5 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C 100C hFE -- IC 1000 VCE=5V 300 10...
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
File Size	61.01K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC5036 2SC5036A
OCR Text	....60.2 3.20.1 9.90.3 2.90.2 4.10.2 8.00.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operati...1000 900 1000 800 7 2 1 0.3 30 2 150 -55 to +150 Unit V 15.00.3 3.00.2 s Absolute Maximum R...
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
File Size	58.72K / 3 Page	View it Online	Download Datasheet

				Panasonic Corporation PANASONIC[Panasonic Semiconductor]
Part No.	2SC5037 2SC5037A
OCR Text	....60.2 3.20.1 9.90.3 2.90.2 4.10.2 8.00.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operati...1000 900 1000 800 7 5 3 1 40 2 150 -55 to +150 Unit V 15.00.3 3.00.2 s Absolute Maximum Rat...
Description	Silicon NPN triple diffusion planar type
File Size	62.18K / 3 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SC5050
OCR Text	...0 0.6 11.0 13.5 14.0 1.1 Max -- 10 1 10 250 1.1 -- -- -- 2.0 pF GHz dB dB dB Unit V A mA A Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE...1000 MHz VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz Attention: This dev...
Description	Silicon NPN Epitaxial
File Size	23.65K / 5 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SC5051
OCR Text	... 0.65 11.0 14.0 14.5 1.1 Max -- 10 1 10 250 1.15 -- -- -- 2.0 pF GHz dB dB dB Unit V A mA A Test conditions I C = 10 A, IE = 0 VCB = 12 V, I...1000 MHz VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz Attention: This dev...
Description	Silicon NPN Epitaxial
File Size	23.89K / 5 Page	View it Online	Download Datasheet

				Rohm CO.,LTD.
Part No.	2SC5060 2SC5060TV2M
OCR Text	... - 80 20 0.2 5 0.6 Max. 100 100 10 3 2500 1.5 2 - - - - - Unit V V A mA - V V MHz pF s s s Conditions IC=50A IC=1mA VCB=70V VEB=5V VCE=3V, IC=0.5A IC/IB=500mA/1mA IC/IB=500mA/1mA VCB=5V, IE=-0.1A, f=30MHz VCE=10V, IE=0A, f=1MHz IC=0.8A, RL=...
Description	Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) Power transistor (9010V, 3A) Power transistor (9010V/ 3A) SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
File Size	50.71K / 1 Page	View it Online	Download Datasheet

For 10 1000 Found Datasheets File :: 171975 Search Time::4.703ms
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