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Sanyo
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Part No. |
2SC4865
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OCR Text |
...ons
Features
* Low noise : NF=1.1dB typ (f=1GHz). * High gain : S21e2=12.5dB typ (f=1GHz). * High cutoff frequency : fT=7.0GHz typ.
Package Dimensions
unit:mm 2110A
1.9 0.95 0.95
0.5
[2SC4865]
0.4 4 3
0.16 0 to 0.1
1
... |
Description |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications
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File Size |
114.65K /
4 Page |
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it Online |
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Sanyo
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Part No. |
2SC4867
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OCR Text |
...ons
Features
* Low noise : NF=1.2dB typ (f=1GHz). * High gain : S21e2=13dB typ (f=1GHz). * High cutoff frequency : fT=9.0GHz typ.
Package Dimensions
unit:mm 2059B
[2SC4867]
0.425
0.3 3 0 to 0.1
1.250
2.1
0.425
1 2 0.65 ... |
Description |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications
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File Size |
126.04K /
4 Page |
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it Online |
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Sanyo
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Part No. |
2SC4868
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OCR Text |
...ons
Features
* Low noise : NF=1.2dB typ (f=1GHz). * High gain : S21e2=13dB typ (f=1GHz). * High cutoff frequency : fT=9.0GHz typ.
Package Dimensions
unit:mm 2018B
[2SC4868]
0.5
0.4 3
0.16
0 to 0.1
1.5 0.5 2.5
1
0.95 ... |
Description |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications
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File Size |
122.12K /
4 Page |
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it Online |
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Sanyo
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Part No. |
2SC4869
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OCR Text |
...ons
Features
* Low noise : NF=1.2dB typ (f=1GHz). * High gain : S21e2=15dB typ (f=1GHz). * High cutoff frequency : fT=9.0GHz typ.
Package Dimensions
unit:mm 2110A
1.9 0.95 0.95
0.5
[2SC4869]
0.4 4 3
0.16 0 to 0.1
1
2 ... |
Description |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications NPN Epitaxial Planar Silicon Transistors
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File Size |
124.77K /
4 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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Part No. |
EMC21L1004 EMC21L1004GN
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OCR Text |
.... Typ. Max.
2.11 26.0 28.5 0.2 1.5:1 210 6.0 -47.0 200 2.17 31.0 0.5 2.5:1 250 15.0 -45.0 250
Unit
GHz dB dBp_p mA mA dBc mA
Frequen...9 -177.7 -106.5 -145.5 -143.0 -124.3 -18.9 -3.6 -3.4 -6.3 -9.3 -12.4 -15.8 -19.5 -59.2 -102.3 -125.5... |
Description |
High Voltage - High Power GaN-HEMT Power Amplifier Module
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File Size |
188.71K /
4 Page |
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it Online |
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Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
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Part No. |
FH102 1282
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OCR Text |
...uilibrium and pair capability.
1 0.65 2.0
[FH102]
5 4 0 `0.1 1.25 2.1 0.2 0.25 0.425 0.15
2
3 0.425
Specifications Absolute Ma...9
Mounted on ceramic board (250mm2x0.8mm), 1unit Mounted on ceramic board (250mm2x0.8mm)
20 10... |
Description |
High-Frequency Low-Noise Amp/ Differential Amp Applications NPN Epitaxial Planar Silicon Composite Transistor From old datasheet system High-Frequency Low-Noise Amp, Differential Amp Applications
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File Size |
65.75K /
5 Page |
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it Online |
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Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
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Part No. |
FH103 1283
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OCR Text |
...
0.425
0.15
6
5
4
1.25 2.1
0 to 0.1
C1
E1
C2
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Co...9
Tr1
Tr2
Ratings 16 8 1.5 50 300 500 150 -55 to +150
0.2
0.25
1 : Collector1 2 : ... |
Description |
High-Frequency Low-Noise Amplifier/ Differential Amplifier Applications NPN Epitaxial Planar Silicon Composite Transistor From old datasheet system High-Frequency Low-Noise Amplifier, Differential Amplifier Applications
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File Size |
47.75K /
4 Page |
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it Online |
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MAXIM[Maxim Integrated Products]
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Part No. |
MAX3793 MAX3793E_D
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OCR Text |
19-3467; Rev 0; 10/04
1Gbps to 4.25Gbps Multirate Transimpedance Amplifier with Photocurrent Monitor
General Description
The MAX3793 transimpedance amplifier provides a compact low-power solution for applications from 1Gbps up to 4.25G... |
Description |
From old datasheet system 1Gbps to 4.25Gbps Multirate Transimpedance Amplifier with Photocurrent Monitor
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File Size |
667.75K /
11 Page |
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it Online |
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Price and Availability
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