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  1.9-2.0ghz Datasheet PDF File

For 1.9-2.0ghz Found Datasheets File :: 818    Search Time::3.984ms    
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    Sanyo
Part No. 2SC4865
OCR Text ...ons Features * Low noise : NF=1.1dB typ (f=1GHz). * High gain : S21e2=12.5dB typ (f=1GHz). * High cutoff frequency : fT=7.0GHz typ. Package Dimensions unit:mm 2110A 1.9 0.95 0.95 0.5 [2SC4865] 0.4 4 3 0.16 0 to 0.1 1 ...
Description NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications

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    Sanyo
Part No. 2SC4867
OCR Text ...ons Features * Low noise : NF=1.2dB typ (f=1GHz). * High gain : S21e2=13dB typ (f=1GHz). * High cutoff frequency : fT=9.0GHz typ. Package Dimensions unit:mm 2059B [2SC4867] 0.425 0.3 3 0 to 0.1 1.250 2.1 0.425 1 2 0.65 ...
Description NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications

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    Sanyo
Part No. 2SC4868
OCR Text ...ons Features * Low noise : NF=1.2dB typ (f=1GHz). * High gain : S21e2=13dB typ (f=1GHz). * High cutoff frequency : fT=9.0GHz typ. Package Dimensions unit:mm 2018B [2SC4868] 0.5 0.4 3 0.16 0 to 0.1 1.5 0.5 2.5 1 0.95 ...
Description NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications

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    Sanyo
Part No. 2SC4869
OCR Text ...ons Features * Low noise : NF=1.2dB typ (f=1GHz). * High gain : S21e2=15dB typ (f=1GHz). * High cutoff frequency : fT=9.0GHz typ. Package Dimensions unit:mm 2110A 1.9 0.95 0.95 0.5 [2SC4869] 0.4 4 3 0.16 0 to 0.1 1 2 ...
Description NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications
NPN Epitaxial Planar Silicon Transistors

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    MGFL48V1920

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGFL48V1920
OCR Text 1.9 - 2.0GHz BAND 60W GaAs FET DESCRIPTION The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - 2.0GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. 3.20...
Description From old datasheet system
1.9-2.0ghz BAND 60W GaAs FET

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    EC3H05B 1225

Sanyo Semicon Device
Sanyo Electric Co., Ltd.
Part No. EC3H05B 1225
OCR Text ...t : mm 2183 0.35 0.2 0.15 0.05 1 0.4 0.25 Low noise : NF=1.2dB typ (f=1GHz). High gain : S21e2=13dB typ (f=1GHz). Hige cutoff frequency : fT=9.0GHz typ. Ultraminiature (1006 size) and thin (0.5mm) leadless package. [EC3H05B] 0.15 ...
Description NPN Epitaxial Planar Type Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications
NPN Epitaxial Planar Silicon Transistor
From old datasheet system
VHF to UHF Wide-Band Low-Noise Amplifier Applications 甚高频到超高频宽带低噪声放大器的应用

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    EUDYNA[Eudyna Devices Inc]
Part No. EMC21L1004 EMC21L1004GN
OCR Text .... Typ. Max. 2.11 26.0 28.5 0.2 1.5:1 210 6.0 -47.0 200 2.17 31.0 0.5 2.5:1 250 15.0 -45.0 250 Unit GHz dB dBp_p mA mA dBc mA Frequen...9 -177.7 -106.5 -145.5 -143.0 -124.3 -18.9 -3.6 -3.4 -6.3 -9.3 -12.4 -15.8 -19.5 -59.2 -102.3 -125.5...
Description High Voltage - High Power GaN-HEMT Power Amplifier Module

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    Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. FH102 1282
OCR Text ...uilibrium and pair capability. 1 0.65 2.0 [FH102] 5 4 0 `0.1 1.25 2.1 0.2 0.25 0.425 0.15 2 3 0.425 Specifications Absolute Ma...9 Mounted on ceramic board (250mm2x0.8mm), 1unit Mounted on ceramic board (250mm2x0.8mm) 20 10...
Description High-Frequency Low-Noise Amp/ Differential Amp Applications
NPN Epitaxial Planar Silicon Composite Transistor
From old datasheet system
High-Frequency Low-Noise Amp, Differential Amp Applications

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    Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. FH103 1283
OCR Text ... 0.425 0.15 6 5 4 1.25 2.1 0 to 0.1 C1 E1 C2 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Co...9 Tr1 Tr2 Ratings 16 8 1.5 50 300 500 150 -55 to +150 0.2 0.25 1 : Collector1 2 : ...
Description High-Frequency Low-Noise Amplifier/ Differential Amplifier Applications
NPN Epitaxial Planar Silicon Composite Transistor
From old datasheet system
High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

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    MAXIM[Maxim Integrated Products]
Part No. MAX3793 MAX3793E_D
OCR Text 19-3467; Rev 0; 10/04 1Gbps to 4.25Gbps Multirate Transimpedance Amplifier with Photocurrent Monitor General Description The MAX3793 transimpedance amplifier provides a compact low-power solution for applications from 1Gbps up to 4.25G...
Description From old datasheet system
1Gbps to 4.25Gbps Multirate Transimpedance Amplifier with Photocurrent Monitor

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For 1.9-2.0ghz Found Datasheets File :: 818    Search Time::3.984ms    
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