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1.2ghz Datasheet PDF File

For 1.2ghz Found Datasheets File :: 323 Search Time::1.813ms
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				Execlics
Part No.	EFA072A
OCR Text	... 10.0db typical power gain at 12ghz 0.3 x 720 micron recessed ?mushroom? gate si 3 n 4 passi vation advanced epitaxial doping profile provides high power efficiency, linearity and reliability ...
Description	Low Distortion GaAs Power FET
File Size	55.38K / 2 Page	View it Online	Download Datasheet

				Execlics
Part No.	EFA060B-70
OCR Text	... 7.5 db typical power gain at 12ghz 0.3 x 600 micron recessed mushroom gate si 3 n 4 passivation advanced epitaxial doping profile provides high power efficiency, linearity and reliability electrical c...
Description	Low Distortion GaAs Power FET
File Size	48.31K / 2 Page	View it Online	Download Datasheet

				Execlics
Part No.	EFA040A-70
OCR Text	... 8.0db typical power gain at 12ghz 0.3 x 400 micron recessed mushroom gate si 3 n 4 passivation advanced epitaxial doping profile provides high power efficiency, linearity and reliability electrical c...
Description	Low Distortion GaAs Power FET
File Size	48.30K / 2 Page	View it Online	Download Datasheet

				Execlics
Part No.	EFA025A-70
OCR Text	... 1db compression f=12ghz 20 p 1db vds=6v, ids=50% idss f=18ghz 17 20 dbm gain at 1db compression f=12ghz 10 g 1db vds=6v, ids=50% idss ...
Description	Low Distortion GaAs Power FET
File Size	60.88K / 2 Page	View it Online	Download Datasheet

				Execlics
Part No.	EFA018A-70
OCR Text	... 10.5db typical power gain at 12ghz typical 1.1db noise figure and 10.5db associated gain at 12ghz 0.3 x 180 micron recessed mushroom gate si 3 n 4 passivation advanced epitaxial doping profile provides high pow...
Description	Low Distortion GaAs Power FET
File Size	48.62K / 2 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EFA160A
OCR Text	12GHz 0.3 X 1600 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 30mA PER BIN RANGE 50 D D EFA160A Low Distortion GaAs Power F...
Description	Low Distortion GaAs Power FET
File Size	31.22K / 2 Page	View it Online	Download Datasheet

				JFW Industries, Inc.
Part No.	50SA-213
OCR Text	...maximum DC-1GHz 1-4GHz 4-8GHz 8-12GHz 12-18GHz DC-1GHz 1-4GHz 4-8GHz 8-12GHz 12-18GHz Impedance VSWR Insertion Loss dB dB dB dB dB maximum maximum maximum maximum maximum Isolation dB dB dB dB dB minimum minimum minimum...
Description	SWITCH ASSEMBLY
File Size	24.75K / 2 Page	View it Online	Download Datasheet

				RF Micro Devices
Part No.	FPD1050-000 FPD1050-000S3 FPD1050-000SQ
OCR Text	... 28.5dBm Linear Output Power at 12GHz 11dB Power Gain at 12GHz 14dB Max Stable Gain at 12GHz 41dBm OIP3 45% Power-Added Efficiency Optimum Technology Matching(R) Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs ...
Description	0.75W POWER pHEMT
File Size	256.78K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF4934AM08 MGF4934BM
OCR Text	... FEATURES Low noise figure @ f=12GHz NFmin. = 0.50dB (Typ.) High associated gain @ f=12GHz Gs = 12.5dB (Typ.) Fig.1 MITSUBISHI Proprietary APPLICATION S to Ku band low noise amplifiers Not to be reproduced or disclosed without p...
Description	SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
File Size	126.92K / 6 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF4934CM
OCR Text	... FEATURES Low noise figure @ f=12GHz NFmin. = 0.50dB (Typ.) High associated gain @ f=12GHz Gs = 13.0dB (Typ.) Fig.1 MITSUBISHI Proprietary APPLICATION S to Ku band low noise amplifiers Not to be reproduced or disclosed without p...
Description	SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
File Size	113.44K / 5 Page	View it Online	Download Datasheet

For 1.2ghz Found Datasheets File :: 323 Search Time::1.813ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |