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  0.0002 Datasheet PDF File

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    2SJ399

Hitachi Semiconductor
Part No. 2SJ399
OCR Text ... Tch Tstg 1 Ratings -30 20 -0.2 -0.4 -0.2 150 150 -55 to +150 Unit V V A A A mW C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol ...
Description Silicon P-Channel MOS FET

File Size 36.00K  /  7 Page

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    2SJ400

SANYO[Sanyo Semicon Device]
Part No. 2SJ400
OCR Text ...sions unit:mm 2093A [2SJ400] 0.9 10.2 4.5 1.3 11.5 1.6 20.9 1.2 9.4 0.8 11.0 8.8 0.4 1 2 3 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : SMP unit:mm 2090A [2SJ400] 0.8 10.2 4.5 1.3 1.5max 8....
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 41.78K  /  4 Page

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    2SJ409 2SJ409L 2SJ409S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ409 2SJ409L 2SJ409S
OCR Text ...)GSS I GSS Min -100 20 -- -- -1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to dra...
Description    Silicon P-Channel MOS FET
Power switching MOSFET

File Size 28.01K  /  5 Page

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    2SJ410

HITACHI[Hitachi Semiconductor]
Part No. 2SJ410
OCR Text ...)GSS I GSS Min -200 20 -- -- -2.0 -- 2.0 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.7 3.2 900 280 65 18 50 90 40 -1.0 220 Max -- -- 10 -250 -4.0 0.85 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = -6 A,...
Description    Silicon P-Channel MOS FET

File Size 29.02K  /  6 Page

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    2SJ411 D11219EJ1V0DS00

NEC[NEC]
Part No. 2SJ411 D11219EJ1V0DS00
OCR Text ... PACKAGE DIMENSIONS (in mm) 7.0 MAX. 1.2 2.0 0.8 0.1 3.0 MAX. FEATURES * Radial taping supported * Can be directly driven by 5-V IC * Low ON resistance RDS(on) = 0.24 MAX. @VGS = -4 V, ID = -2.5 A RDS(on) = 0.11 MAX. @VGS =...
Description    P-CHANNEL SIGNAL MOS FET FOR SWITCHING
From old datasheet system

File Size 67.31K  /  6 Page

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    2SJ413

SANYO[Sanyo Semicon Device]
Part No. 2SJ413
OCR Text ...unit:mm 2076B [2SJ413] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage ...
Description Ultrahigh-Speed Switching Applications

File Size 78.32K  /  4 Page

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    2SJ418

SANYO[Sanyo Semicon Device]
Part No. 2SJ418
OCR Text ... unit:mm 2083B [2SJ418] 6.5 5.0 4 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 7.5 0.5 1 2 3 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP unit:mm 2092B [2SJ418] 6.5 5.0...
Description Ultrahigh-Speed Switching Applications

File Size 126.59K  /  4 Page

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    2SJ424

SANKEN[Sanken electric]
Part No. 2SJ424
OCR Text ...RDS (on) Ciss Coss t on toff -2.0 1.0 1.6 0.35 270 170 75 35 0.5 min -60 500 Ratings typ max Unit V nA A V S pF pF ns ns (Ta = 25C) Unit V V A A W C C Conditions I D = -250A, VGS = 0V VGS = 20V VDS = -60V, VGS = 0V VDS = -10V, I D ...
Description MOSFET

File Size 23.37K  /  1 Page

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    2SJ425

SANKEN[Sanken electric]
Part No. 2SJ425
OCR Text ...RDS (on) Ciss Coss t on toff -2.0 1.8 2.8 0.2 580 360 90 45 0.28 min -60 500 Ratings typ max Unit V nA A V S pF pF ns ns (Ta = 25C) Unit V V A A W C C Conditions I D = -250A, VGS = 0V VGS = in 20V 32 (Tch 30 (Tc = 25C) 1...
Description MOSFET

File Size 33.23K  /  1 Page

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    2SJ448

NEC[NEC]
Part No. 2SJ448
OCR Text ...DIMENSIONS (in millimeters) 10.0 0.3 4.5 0.2 3.2 0.2 2.7 0.2 FEATURES * Low On-Resistance RDS(on) = 2.0 MAX. (@ VGS = -10 V, ID = -2.0 A) * * * * 15.0 0.3 3 0.1 4 0.2 Built-in G-S Gate Protection Diodes High Avalanche C...
Description SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 117.41K  /  8 Page

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