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For .4mh Found Datasheets File :: 321 Search Time::1.375ms
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				SANKEN[Sanken electric]
Part No.	SLA5058
OCR Text	...SO Tch Tstg * : VDD=25V, L=3.4mh, ID=7A, unclamped, RG=50 1.5 sEquivalent circuit diagram 3 5 7 9 11 2 4 6 8 10 1 12 Characteristic curves ID-VDS Characteristics (Typical) 7 10V 4V ID-VGS Characterist...
Description	N-channel General purpose
File Size	20.33K / 1 Page	View it Online	Download Datasheet

				Panasonic Semiconductor
Part No.	2SK2571
OCR Text	...* TC = 25C Ta = 25C L = 2.4mh, IL = 13A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to So...
Description	Silicon N-Channel Power F-MOS FET
File Size	43.89K / 3 Page	View it Online	Download Datasheet

				Sanken electric
Part No.	2SK2706
OCR Text	...duty cycle 1% * 1: PW =100s,L = 4mH, IL = 18A, VDD 30V, * 2: See Figure 1 on Page 5. unclamped, RG = 50, VDS -- ID Characteristics 18 16 14 12 10V 5V 18 16 14 VGS -- ID Characteristics 0.3 VDS = 20V ID -- RDS (ON) Characterist...
Description	MOSFET
File Size	34.44K / 1 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRFP360 FN2290
OCR Text	... = 50V, starting TJ = 25oC, L = 4mH, RG = 25, Peak IAS = 23A. Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 Unless Otherwise Specified 25 0.8 0.6 0.4 0.2 0 ID, DRAIN CURRENT (A) 20 15 10 5 0 ...
Description	From old datasheet system 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET
File Size	54.71K / 7 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC Sanken electric
Part No.	SLA5075
OCR Text	...0 to +150 C * : VDD=30V, L=3.4mh, ID=5A, unclamped, RG=50, see Fig. E on page 15. sEquivalent circuit diagram 5 10 12 4 3 2 11 7 6 1 13 15 14 Pins 8, 9 : NC Characteristic curves ID-VDS Characteristics (Typical) 5 5...
Description	N-channel 3-phase DC motor 200V AC direct drive
File Size	28.56K / 1 Page	View it Online	Download Datasheet

				Sanken electric
Part No.	SLA5081
OCR Text	...W100s, duty1% *2 : VDD=25V, L=3.4mh, ID=7A, unclamped, RG=50, see Fig. E on page 15. sEquivalent circuit diagram 3 FET1 2 FET2 7 8 10 FET2 9 12 FET2 11 14 FET2 13 1 15 Pins 4, 5, 6 : NC Characteristic curves ID-VDS Characte...
Description	N-channel General purpose
File Size	34.53K / 2 Page	View it Online	Download Datasheet

				SemiWell Semiconductor
Part No.	SFP730
OCR Text	... junction temperature 2. L = 19.4mh, IAS =6.5A, VDD = 50V, RG = 0 , Starting TJ = 25C 3. ISD 6.5A, di/dt 300A/us, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse Width 300us, Duty Cycle 2% 5. Essentially independent of operating tem...
Description	98W Power MOSFET, 400V Vdss, 6.5A Id, 1.0Om Rds N-Channel MOSFET
File Size	895.95K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFP3710PBF IRFP3710PBF-15
OCR Text	...ed by Starting TJ = 25C, L = 1.4mh max. junction temperature. ( See fig. 11 ) ISD 28A, di/dt 460A/s, VDD V(BR)DSS, T J 175C RG = 25, IAS = 28A. (See Figure 12) Pulse width 300s; duty cycle 2%. IRFP3710PbF 1000 VGS...
Description	HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.025Ω , ID = 57A ) HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.025ヘ , ID = 57A ) ADVANCED PROCESS TECHNOLOGY
File Size	227.59K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	IRFR110A IRFR110ATF IRFR110ATM IRFU110ATU IRFU110A
OCR Text	...um Junction Temperature O 2 O L=4mH, I AS=4.7A, VDD=25V, RG=27 , Starting T J =25oC o 3 _ _ _ O ISD < 5.6A, di/dt <250A/ s, V DD < BVDSS , Starting T J =25 C _ s, 4 O Pulse Test : Pulse Width = 250 Duty Cycle <2% 5 Essentially Independent ...
Description	N-CHANNEL POWER MOSFET 100V N-Channel A-FET / Substitute of IRFU110 100V N-Channel A-FET / Substitute of IRFR110 Advanced Power MOSFET
File Size	253.56K / 7 Page	View it Online	Download Datasheet

For .4mh Found Datasheets File :: 321 Search Time::1.375ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |