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Xian Semipower Electronic Technology Co., Ltd.
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Part No. |
SW4N60B
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OCR Text |
...ce breakdown voltage v gs =0v, i d =250ua 600 v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c 1.63 v/ o c i dss drain to source leakage current v ds =600v, v... |
Description |
N-channel I-PAK/D-PAK/TO-220F MOSFET
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File Size |
904.35K /
7 Page |
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it Online |
Download Datasheet |
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MS KENNEDY CORP
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Part No. |
MSK3003
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OCR Text |
...l transistors) v ds =55v v gs =0v (q2,q4,q6) v ds =-55v v gs =0v (q1,q3,q5) v gs =20v v ds =0 (all transistors) v ds =v gs i d =250 a (q2,q4,q6) v ds =v gs i d =250 a (q1,q3,q5) v gs =10v i d =10a (q2,q4,q6) v gs =-10v i d =-7... |
Description |
10 A, 55 V, 0.15 ohm, 6 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
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File Size |
138.27K /
5 Page |
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it Online |
Download Datasheet |
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ETC ANACHIP[Anachip Corp]
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Part No. |
AF4835P AF4835PS AF4835PSA AF4835PSL AF4835PSLA
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OCR Text |
...Capacitance Test Conditions VGS=0V, ID=-250uA Reference to 25oC, ID=-1mA VGS=-10V, ID=-8A VGS=-4.5V, ID=-5A VDS=VGS, ID=-250uA VDS=-15V, ID=-8A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=20V ID=-4.6A, VDS=-15V, VGS=-10V VDS=-15V, ID=-1A, RG=6, V... |
Description |
P-Channel 30-V (D-S) MOSFET P-Channel Enhancement Mode Power MOSFET
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File Size |
245.21K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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