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  -30v Datasheet PDF File

For -30v Found Datasheets File :: 33865    Search Time::2.016ms    
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    2SD2137 2SD2137A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2137 2SD2137A
OCR Text ...BE = 0 VCE = 80V, VBE = 0 VCE = 30V, IB = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 3A IC = 3A, IB = 0.375A VCE = 5V, IC = 0.2A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = - 0.1A, VC...
Description Silicon NPN triple diffusion planar type(For power amplification)

File Size 52.93K  /  3 Page

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    2SD2138A 2SB1418 2SB1418A 2SD2138

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2138A 2SB1418 2SB1418A 2SD2138
OCR Text ...B = 0 VCB = -80V, IB = 0 VCE = -30v, IB = 0 VCE = -40V, IB = 0 VEB = -5V, IC = 0 IC = -30mA, IB = 0 VCE = -4V, IC = -1A VCE = -4V, IC = -2A VCE = -4V, IC = -2A IC = -2A, IB = -8mA VCE = -10V, IC = - 0.5A, f = 1MHz IC = -2A, IB1 = -8mA, IB2 ...
Description Silicon PNP epitaxial planar type Darlington(For power amplification)

File Size 59.81K  /  2 Page

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    2SD2138 2SD2138A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2138 2SD2138A
OCR Text ... IE = 0 VCE = 80V, IE = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 2A VCE = 4V, IC = 2A IC = 2A, IB = 8mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 2A, IB1 = 8mA, IB2 = -8mA, VCC = 50...
Description Silicon NPN triple diffusion planar type Darlington(For power amplification)

File Size 59.65K  /  2 Page

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    2SJ163

PANASONIC[Panasonic Semiconductor]
Part No. 2SJ163
OCR Text ...tions VDS = -10V, VGS = 0 VGS = 30V, VDS = 0 IG = 10A, VDS = 0 VDS = -10V, ID = -10A VDS = -10V, ID = -1mA, f = 1kHz VDS = -10mV, VGS = 0 VDS = -10V, VGS = 0, f = 1MHz 1.8 65 1.5 2.5 300 12 4 3.5 min - 0.2 typ max -6 10 Unit mA nA V V mS p...
Description Silicon P-Channel Junction FET

File Size 30.72K  /  2 Page

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    2SJ164

PANASONIC[Panasonic Semiconductor]
Part No. 2SJ164
OCR Text ...tions VDS = -10V, VGS = 0 VGS = 30V, VDS = 0 IG = 10A, VDS = 0 VDS = -10V, ID = -10A VDS = -10V, ID = -1mA, f = 1kHz VDS = -10mV, VGS = 0 VDS = -10V, VGS = 0, f = 1MHz 1.8 65 1.5 2.5 300 10 3 3 3.5 min - 0.2 typ max -6 10 Unit mA nA V V mS ...
Description Silicon P-Channel Junction FET

File Size 30.13K  /  2 Page

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    2SJ172

HITACHI[Hitachi Semiconductor]
Part No. 2SJ172
OCR Text ...VGS = -10 V . . duty < 1% VDD = 30V -100 0 20 60 80 40 Gate Charge Qg (nc) -20 100 -0.5 -1.0 -2 -5 -10 Drain Current ID (A) -20 5 2SJ172 Reverse Drain Current vs. Source to Drain Voltage -20 Reverse Drain Current IDR (A) ...
Description Silicon P-Channel MOS FET

File Size 41.90K  /  7 Page

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    2SJ186

HITACHI[Hitachi Semiconductor]
Part No. 2SJ186
OCR Text ...V PW = 2 s duty < 1% . . VDD = -30v -200 -4 tf td (off) td (on) 20 10 5 -8 -600 VGS ID = -0.5 A -12 tr 2 1 -0.01 -0.02 -800 -16 -1,000 0 2 6 8 4 Gate Charge Qg (nc) -20 10 -0.05 -0.1 -0.2 -0.5...
Description    Silicon P-Channel MOS FET

File Size 41.04K  /  9 Page

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    2SJ339

Sanyo Semicon Device
Toshiba Semiconductor
Part No. 2SJ339
OCR Text ...tching Time Test Circuit VDD=--30v VIN 0V --10V VIN PW=10s D.C.1% ID=--15A RL=2 VOUT D G P.G 50 S --50 ID -- VDS 5.0V VG S =-- --50 ID -- VGS VDS=--10V 25C 75C --4 . --4 0V 25C --1 --2 --3 --40 --40 D...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 39.40K  /  4 Page

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    2SJ340

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SJ340
OCR Text ...tching Time Test Circuit VDD=--30v Vin 0V --10V Vin PW=10s D.C.1% ID=--15A RL=2 VOUT D G P.G 50 2SJ340 S No.6420-2/4 2SJ340 --50 ID -- VDS 5.0V --4 .5V VG S =-. --4 0V --50 ID -- VGS VDS=--10V --40 --40 ...
Description Ultrahigh-Speed Switching Applications 超高速开关应

File Size 40.73K  /  4 Page

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    2SJ352 2SJ351

Renesas Electronics, Corp.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ352 2SJ351
OCR Text ...Output 10% Input 90% VDD . . = -30v 50 toff 10% Waveforms PW = 50 s duty ratio = 1% 6 Unit: mm 5.0 0.3 15.6 0.3 1.0 3.2 0.2 4.8 0.2 1.5 0.5 14.9 0.2 19.9 0.2 1.6 1.4 Max 2.0 2.8 18.0 0.5 1.0 0.2 2.0 ...
Description Silicon P-Channel MOS FET 硅P沟道场效应晶体管

File Size 39.26K  /  8 Page

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For -30v Found Datasheets File :: 33865    Search Time::2.016ms    
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