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Advanced Power Electron...
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Part No. |
AP6N2R5LCMT
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OCR Text |
...ermal resistance, junction-case 1.2 /w rthj-a maximum thermal resistance, junction-ambient 3 25 /w parameter drain-source voltage gate-sou...25a - 119 190 nc q gs gate-source charge v ds =30v - 20 - nc q gd gate-drain ("miller") charge v gs ... |
Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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File Size |
69.48K /
6 Page |
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it Online |
Download Datasheet
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SHANGHAI BELLING CO., L...
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Part No. |
BLM3050K
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OCR Text |
...dss v ds =30v,v gs =0v - - 1 a gate-body leakage current i gss v gs =20v,v ds =0v - - 100 na on characteristics (note 3) ...25a - 8 11 drain-source on-state resistance r ds(on) v gs =5v, i d =20a - 10 16 m ? for... |
Description |
N-Channel Enhancement Mode Power MOSFET
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File Size |
488.81K /
6 Page |
View
it Online |
Download Datasheet
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