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MICRO-ELECTRONICS[Micro Electronics]
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Part No. |
MY31W MY31 MY31C MY31D MY31T
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Description |
Triac; thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate trigger Current (QI), Igt:5mA Triac; thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):8A; Gate trigger Current (QI), Igt YELLOW LED LAMPS
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File Size |
46.34K /
1 Page |
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
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Part No. |
M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554BG3-CD5_CC M470T6554BGZ0-CD5_CC M470T6554BGZ3-CD5_CC M470T6554BZ0-LD5_CC M470T6554BZ3-LD5_CC M470T2953BY0-LD5_CC M470T3354BG0-CD5_CC M470T3354BG3-CD5_CC M470T3354BGZ0-CD5_CC M470T3354BGZ3-CD5_CC M470T2953BSY3-CD5_CC M470T3354BZ0-LD5_CC M470T3354BZ3-LD5_CC M470T2953BY3-LD5_CC M470T2953BS3-CD5_CC M470T2953BSY0-CD5_CC M470T2953BXX M470T2953BY0 M470T2953BY0-LD5/CC M470T3354BZ0-LD5/CC M470T6554BZ0-LD5/CC M470T2953BS0-CD5/CC M470T3354BG0-CD5/CC M470T6554BG0-CD5/CC M470T3354BZ3-LD5/CC M470T2953BY3-LD5/CC M470T6554BZ3-LD5/CC M470T3354BG3-CD5/CC M470T6554BG3-CD5/CC M470T2953BSY0-CD5/CC M470T2953BSY3-CD5/CC M470T2953BS3-CD5/CC M470T3354BGZ0-CD5/CC M470T3354BGZ3-CD5/CC M470T6554BGZ3-CD5/CC M470T6554BGZ0-CD5/CC
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Description |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC 64M X 64 DDR DRAM module, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 32M X 64 DDR DRAM module, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC 128M X 64 DDR DRAM module, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 Triac; thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate trigger Current (QI), Igt:35mA; Current, It av:6A; Gate trigger Current Max, Igt:35mA RoHS Compliant: Yes
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File Size |
325.20K /
19 Page |
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IXYS, Corp.
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Part No. |
MCC220-14IO1 MCD220-16IO1
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Description |
1400V thyristor modules thyristor/diode module thyristor modules thyristor/Diode modules 400 A, 1600 V, SCR thyristor modules thyristor/Diode modules 400 A, 1400 V, SCR
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File Size |
163.78K /
4 Page |
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Square D by Schneider Electric Molex, Inc. TE Connectivity, Ltd. Microchip Technology, Inc. Wickmann by Littelfuse
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Part No. |
ED480421 ED460221 ED460225 ED771825OY ED721221OY ED420421 ED430225 ED770121OZ ED720121OZ ED430121 ED720421OZ
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Description |
thyristor module|DOUBLER|HALF-CNTLD|NEGATIVE|400V V(RRM)|210A I(T) thyristor module|DOUBLER|HALF-CNTLD|NEGATIVE|1.8KV V(RRM)|250A I(T) 晶闸管模块|倍增|半CNTLD |负| 1.8KV五(无线资源管理)| 250A章吾(翻译) thyristor module|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|210A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 1.2KV五(无线资源管理)| 210A我(翻译 thyristor module|SCR DOUBLER|200V V(RRM)|210A I(T) 晶闸管模块|可控硅倍增| 200伏五(无线资源管理)| 210A我(翻译 thyristor module|DOUBLER|HALF-CNTLD|POSITIVE|400V V(RRM)|210A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 400V五(无线资源管理)| 210A我(翻译 thyristor module|SCR DOUBLER|200V V(RRM)|250A I(T) 晶闸管模块|可控硅倍增| 200伏五(无线资源管理)| 250A章吾(翻译) thyristor module|DOUBLER|HALF-CNTLD|NEGATIVE|100V V(RRM)|210A I(T) 晶闸管模块|倍增|半CNTLD |负| 100V的五(无线资源管理)| 210A我(翻译 thyristor module|DOUBLER|HALF-CNTLD|POSITIVE|100V V(RRM)|210A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 100V的五(无线资源管理)| 210A我(翻译 thyristor module|SCR DOUBLER|100V V(RRM)|210A I(T) 晶闸管模块|可控硅倍增器| 100V的五(无线资源管理)| 210A我(翻译
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File Size |
405.23K /
6 Page |
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Electronic Theatre Controls, Inc.
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Part No. |
STK16C88-S35 STK16C88-S45I STK16C88-S35I STK16C88-W45 STK16C88-W35
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Description |
SCR thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate trigger Current Max, Igt:35uA NVRAM (EEPROM Based) SCR thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):35A; Peak Non Repetitive Surge Current, Itsm:500A; Gate trigger Current Max, Igt:40uA DIODE TVS 13V 500W AXL UNI 5% NVRAM中(EEPROM的基础 SCR thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate trigger Current Max, Igt:50uA
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File Size |
95.01K /
9 Page |
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Price and Availability
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