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INTERSIL[Intersil Corporation]
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| Part No. |
FRK254H FRK254R FRK254D FN3231
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| OCR Text |
...e-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) ...gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed ... |
| Description |
20A/ 250V/ 0.170 Ohm/ Rad Hard/ N-Channel Power MOSFETs
20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs
From old datasheet system
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| File Size |
47.78K /
6 Page |
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it Online |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FSL9230R3 FN4084 FSL9230R4
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| OCR Text |
...RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/c...Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .... |
| Description |
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3A 200V的电压，1.50欧姆，拉德硬，SEGR性，P通道功率MOSFET
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
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| File Size |
45.44K /
8 Page |
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it Online |
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International Rectifier, Corp.
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| Part No. |
JANSF2N7382 IRHY9130CM-15
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| OCR Text |
...number irhy9130cm 100k rads (si) 0.30 ? -11a jansr2n7382 irhy93130cm 300k rads (si) 0.30 ? -11a jansf2n7382 features: single event effect (see) hardened low r ds(on) low total gate charge proton tolerant simple drive requireme... |
| Description |
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package - 100V00kRad高可靠性单P沟道MOSFET的工贸硬化在TO - 257AA封装
Simple Drive Requirements
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| File Size |
114.00K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHM53160 IRHM54160 IRHM58160 IRHM57160
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| OCR Text |
...tion Level IRHM57160 100K Rads (Si) IRHM53160 300K Rads (Si) IRHM54160 IRHM58160 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.018 0.018 0.018 0....gate charge reduces the power losses in switching applications such as DC to DC converters and motor... |
| Description |
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE
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| File Size |
118.10K /
8 Page |
View
it Online |
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