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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STP6NA60FI STP6NA60 3070
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| OCR Text |
... (V GS = 0) Drain-gate Voltage (RG S = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c ...195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.0... |
| Description |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
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| File Size |
205.14K /
10 Page |
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STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STP6NA80FI STP6NA80 3071
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| OCR Text |
... (V GS = 0) Drain-gate Voltage (RG S = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c ...195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.0... |
| Description |
N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET) N沟道增强模式快速功率MOS晶体管（不适用沟道增强模式快速功率MOSFET的）
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
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| File Size |
201.29K /
10 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
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| Part No. |
RV4141 RV4141AN RV4141A RV4141AM
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| OCR Text |
...load/ neutral and earth ground. RG represents the ground to neutral fault condition. According to uL 943, the GFCI must trip when RN = 0.4, ...195 .022 .070 .015 .430 -- .325 .280 Millimeters Min. -- .38 2.93 .36 1.14 .20 8.84 .13 7.62 6.10 Ma... |
| Description |
Low Power Ground Fault Interrupter
Low Power Ground Fault Interrupt Controller
Low Power Ground Fault Interrupter 1-CHANNEL POWER SuPPLY SuPPORT CKT, PDSO8
Low Power Ground Fault Interrupter POWER SuPPLY SuPPORT CKT, PDIP8
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| File Size |
342.77K /
8 Page |
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it Online |
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IXYS, Corp.
IXYS[IXYS Corporation]
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| Part No. |
IXEN60N120 IXEN60N120D1
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| OCR Text |
...t TC = 25C TC = 90C VGE = 15 V; RG = 22 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = 900 V; VGE = 15 V; RG = 22 ; TVJ = 125C ...195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 ... |
| Description |
NPT IGBT 100 A, 1200 V, N-CHANNEL IGBT
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| File Size |
35.22K /
2 Page |
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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
IRFI640 IRFI640B IRFW640 IRFW640B
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| OCR Text |
..., 5)
VDD = 100 V, ID = 18 A, RG = 25
(Note 4, 5)
--------
20 145 145 110 45 6.5 22
50 300 300 230 58 ---
ns ns ns ns nC nC ...195 1.47
18 72 1.5 ---
A A V ns C
Notes: 1. Repetitive Rating : Pulse width limited by maxi... |
| Description |
200V N-Channel MOSFET 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
701.17K /
9 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
IRFS340B
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| OCR Text |
..., 5)
VDD = 200 V, ID = 10 A, RG = 25
(Note 4, 5)
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20 80 125 85 41 7 17
50 170 260 180 53 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drai... |
| Description |
400V N-Channel MOSFET
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| File Size |
670.18K /
8 Page |
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it Online |
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