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				Fairchild Semiconductor
Part No.	FCPF380N60F152
OCR Text	...erse recovery charge - 2.7 - c notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. i as = 2.3a, v dd = 50...q g , total gate charge [nc] fcpf380n60_f152 ? n-channel mosfet www.fairchildsemi.com 4 ?2013 fa...
Description	N-Channel SuperFET II MOSFET 600V, 10.2A, 380mOhms
File Size	291.29K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FCPF380N60E152
OCR Text	...everse recovery charge - 3 - c notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. i as = 2.3a, v dd = 5...q g , total gate charge [nc] fcpf380n60e_f152 ? n-channel mosfet www.fairchildsemi.com 4 ?2013 f...
Description	N-Channel SuperFET II MOSFET 600V, 10.2A, 380mOhms
File Size	301.13K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FCP380N60E FCPF380N60E
OCR Text	...everse recovery charge - 3 - c notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. i as = 2.3 a, v dd = ...q g , total gate charge [nc] fcp380n60e / fcpf380n60e n-channel mosfet www.fairchildsemi.com 4 ?...
Description	N-Channel SuperFETII MOSFET 600V, 10.2A, 380m
File Size	302.62K / 10 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FqD2N100
OCR Text	...c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 120mh, i as = 1.6a...q g total gate charge v ds = 800 v, i d = 2.0 a, v gs = 10 v -- 12 15.5 nc q gs gate-source charg...
Description	N-Channel qFET? MOSFET
File Size	1,002.17K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FqD24N08TM
OCR Text	...c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 0.82mh, i as = 19....q g total gate charge v ds = 64 v, i d = 24 a, v gs = 10 v ...
Description	80V N-Channel MOSFET
File Size	711.83K / 9 Page	View it Online	Download Datasheet

				Vishay Intertechnology,Inc.
Part No.	SI1012R
OCR Text	...g (hbm, method 3015) esd 2000 v notes a. pulse width limited by maximum junction temperature. b. surface mounted on fr4 board. si1012r/x v...q g 750 gate-source charge q gs v ds = 10 v, v gs = 4.5 v, i d = 250 ma 75 pc gate-drain charg...
Description	N-Channel 1.8-V (G-S) MOSFET(工作电压1.8V的N沟道增强型MOSFET)
File Size	42.78K / 5 Page	View it Online	Download Datasheet

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