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| Part No. |
LM13700 LM13700AN LM13700M LM13700N
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| OCR Text |
... operates in much the same man- ner, providing a single rc roll-off below the defined cut-off frequency. additional amplifiers may be used to implement higher order filters as demonstrated by the two-pole butterworth lo-pass filter of figur... |
| Description |
Dual Operational Transconductance Amplifiers with Linearizing Diodes and Buffers
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| File Size |
638.25K /
24 Page |
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Zarlink Semiconductor Inc.
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| Part No. |
ZL10313UBH
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| OCR Text |
...gue i and q signals from the tu ner, digitises and digitally demodulates this signal, implements the complete dvb/dss fec (forward error correction) and de- scrambling function. the output is in the form of mpeg2 or dss transport stream dat... |
| Description |
WIRE, PTFE, A, WHITE, 7/.012MM, 100M; Area, conductor CSA:0.079mm2; Conductor make-up:7/0.12mm; Voltage rating, AC:300V; Current rating:3A; Colour, primary insulation:White; Material, primary insulation:PTFE; Diameter, RoHS Compliant: Yes
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| File Size |
313.15K /
26 Page |
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it Online |
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IBM Microeletronics
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| Part No. |
IBM0312804
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| OCR Text |
...nitialized in a predefined man- ner. during power on, all vdd and vddq pins must be built up simultaneously to the specified voltage when the input signals are held in the nop state. the power on voltage must not exceed vdd+0.3v on any of t... |
| Description |
128MbMbit x 8 I/O x 4 BankSynchronous DRAM(128M位（4Mx 8 I/O x 4 组）同步动态RAM)
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| File Size |
701.99K /
70 Page |
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it Online |
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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
WFP730
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| OCR Text |
... pe t i t i ve a v alan c h e e ner g y (n o t e 1 ) 7 . 4 mj d v / d t p ea k di o d e r e c o v e r y d v / d t (n ot e 3 ) 4 v /n s p d t o t a l p o w e r di ss ip a t i o n ( @ t c = 2 5 ) 7 4 w d e ra t in g f a c t o r a bo ve 2 5 ... |
| Description |
Silicon N-Channel MOSFET
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| File Size |
673.35K /
7 Page |
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it Online |
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Winsemi
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| Part No. |
WFU1N60N
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| OCR Text |
... pe t i t i ve a v alan c h e e ner g y (n o t e 1 ) 3. 1 m j d v / d t p ea k di o d e r e c o v e r y d v / d t (n ot e 3 ) 4. 5 v / n s p d t o t a l p o w e r di ss ip a t i o n ( @ t c = 2 5 ) 3 0 w d e ra t in g f a c t o r a bo ve 2... |
| Description |
Silicon N-Channel MOSFET
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| File Size |
647.68K /
7 Page |
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it Online |
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Pyramid Semiconductor, Corp.
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| Part No. |
PYA28HC256E-70LMB PYA28HC256E-70CWMB
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| OCR Text |
...63 bytes in the same man - ner as the frst byte was written. each successive byte load cycle, started by the we high to low transition, must begin within 150s of the falling edge of the pre - ceding we . if a s... |
| Description |
32K X 8 EEPROM 5V, 70 ns, CQCC32 0.450 X 0.550 INCH, CERAMIC, LCC-32
32K X 8 EEPROM 5V, 70 ns, CDIP28 0.600 INCH, CERAMIC, SIDE BRAZED, DIP-28
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| File Size |
508.48K /
12 Page |
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it Online |
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Price and Availability
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