|
|
|
Samsung Semiconductor Co., Ltd.
|
Part No. |
S1M8657X01-F0T0
|
OCR Text |
...vcc tx_if1 tx_if2 tagc_cont gnd n.c vcc gnd txd0 txd1 txd2 txd3 txd4 txd5 txd6 txd7 tclk tclkb vddm gnd vcc gpena gpdata gpclk gpin1 gpin2 g...cdma/fm talk mode. an external components pull it up using vdd when operation is not allowed. 4 tag... |
Description |
TX IF/BBA WITH AGC 德克萨斯州中工商管理带AGC
|
File Size |
286.26K /
34 Page |
View
it Online |
Download Datasheet |
|
|
|
飞思卡尔半导体(中国)有限公司
|
Part No. |
MRF6S18140HR3
|
OCR Text |
n - channel enhancement - mode lateral mosfets designed for n - cdma base station applications with frequencies from 1805 to 1880 mhz. suitable for tdma, cdma and multicarrier amplifier applica- tions. to be used in class ab fo r p c n - ... |
Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强型MOSFET的外
|
File Size |
407.60K /
12 Page |
View
it Online |
Download Datasheet |
|
|
|
飞思卡尔半导体(中国)有限公司
|
Part No. |
MRFG35003MT1
|
OCR Text |
...efficiency and high linearity ? n suffix indicates lead - free terminations reference design characteristics ? typical single - channel w - cdma performance: - 45 dbc acpr, 2.45 ghz, 12 volts, i dq = 55 ma, 5 mhz offset/3.84 mhz bw, 64 d... |
Description |
RF Reference Design Library Gallium Arsenide PHEMT
|
File Size |
96.67K /
5 Page |
View
it Online |
Download Datasheet |
|
|
|
Motorola, Inc.
|
Part No. |
MRFG35003MT1
|
OCR Text |
...f r e e s c a l e s e m i c o n d u c t o r , i ...cdma, 8.5 p/a @ 0.01% probability, 64 ch, 3.84 mcps) acpr ? ?42 ?40 dbc f r e e s c a l e... |
Description |
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
File Size |
332.98K /
8 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|