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http://
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| Part No. |
MW6IC1940NBR1
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| OCR Text |
...ng junction temperature (1,2) t j 225 c input power p in 20 dbm table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case w--cdma application stage 1, 28 vdc, i dq1 = 200 ma (p out = 4.5 w... |
| Description |
RF LDMOS Wideband Integrated Power Amplifier
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| File Size |
835.17K /
17 Page |
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it Online |
Download Datasheet
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Sony Electronics
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| Part No. |
CXD2951GA-2
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| OCR Text |
...RT
ETESTTDI ETESTTINT TDO
J
112
IOVDD7
109
IOVSS8
111
ETEST4
23
ETESTTDO
19
CVDD1
18
CVSS1
J
H
115
114
113
20
TRST
15
17
H
ECCKI BKUPCVDD BKUPCVSS
IOVDD1 EXTCXO
G
116
... |
| Description |
Single Chip GPS LSI
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| File Size |
296.67K /
26 Page |
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it Online |
Download Datasheet |
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panasonic
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| Part No. |
AN6080FHN
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| OCR Text |
...y: 50 mm x 50 mm x t0.8 mm) Rth(j-a) = 171.2C/W
0.300 0.251 0.200 Independent IC without a heat shink Rth(j-a) = 397.4C/W
0.100
0.000 0 25 50 75 100 125
Ambient temperature Ta (C)
6
SDM00001BEB
AN6080FHN
Technical Dat... |
| Description |
QFN016-P-0304A
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| File Size |
163.09K /
10 Page |
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it Online |
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Matsshita / Panasonic
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| Part No. |
AN6080FHN
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| OCR Text |
...y: 50 mm x 50 mm x t0.8 mm) Rth(j-a) = 171.2C/W
0.300 0.251 0.200 Independent IC without a heat shink Rth(j-a) = 397.4C/W
0.100
0.000 0 25 50 75 100 125
Ambient temperature Ta (C)
6
ICs for Mobile Communication
I Technica... |
| Description |
ICs for Mobile Communication
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| File Size |
144.18K /
10 Page |
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it Online |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF5S21100HR3 MRF5S21100HSR3
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| OCR Text |
...perating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, juncti...cdma lateral n - channel rf power mosfets case 465 - 06, style 1 ni - 780 mrf5s21100hr3 case 465a - ... |
| Description |
To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
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| File Size |
375.20K /
12 Page |
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it Online |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6S20010GNR1
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| OCR Text |
...perating junction temperature t j 200 c document number: mrf6s20010n rev. 1, 5/2006 freescale semiconductor technical data 1600 - 2200 mhz, 10 w, 28 v gsm/gsm edge single n - cdma 2 x w - cdma lateral n - channel rf power mosfets mrf6s20... |
| Description |
RF Power Field Effect Transistors 射频功率场效应晶体管
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| File Size |
584.19K /
24 Page |
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it Online |
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Price and Availability
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