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  ion-implanted Datasheet PDF File

For ion-implanted Found Datasheets File :: 964    Search Time::1.75ms    
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    MRF2947 MRF2947AT1 MRF2947AT2 MRF2947RAT1 MRF2947RAT2

MOTOROLA[Motorola, Inc]
Part No. MRF2947 MRF2947AT1 MRF2947AT2 MRF2947RAT1 MRF2947RAT2
OCR Text ...s systems. The MRF2947 is fully ion-implanted with gold metallization and nitride passivation for maximum device reliability, performance and uniformity. * Low Noise Figure, NF = 1.5 dB (Typ) @ 1 GHz @ 5 mA * High Current Gain-Bandwidth Pro...
Description LOW NOISE TRANSISTORS

File Size 179.65K  /  12 Page

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    LBE2003S LBE2009S LCE2009S

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Philipss
Part No. LBE2003S LBE2009S LCE2009S
OCR Text ...* Self-aligned process entirely ion implanted and gold metallization * Optimum temperature profile * Excellent performance and reliability. APPLICATIONS * Common emitter class-A linear power amplifiers up to 4 GHz. PIN 1 2 3 4 DESCRIPTION ...
Description NPN microwave power transistors

File Size 125.38K  /  16 Page

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    MUR8100E RURP8100 MURP810 RURP8100NL

FAIRCHILD[Fairchild Semiconductor]
Part No. MUR8100E RURP8100 MURP810 RURP8100NL
OCR Text ...ar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Th...
Description 8A, 1000V Ultrafast Diodes
(MUR8100E / MURP810) 8A / 1000V Ultrafast Diodes

File Size 117.66K  /  5 Page

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    TISP3072F3 TISP3082F3 TISP3082F3SL

Power Innovations Limited
POINN[Power Innovations Ltd]
Part No. TISP3072F3 TISP3082F3 TISP3082F3SL
OCR Text ...STEM SECONDARY PROTECTION q ion-implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE `3072F3 `3082F3 VDRM V 58 66 V(BO) V 72 82 D PACKAGE (TOP VIEW) T NC NC R 1 2 3 4 8 7 6 5 G G...
Description Dual Symmetrical Overvoltage TISP for 3 Wire Ground Backed Ringer Protection
DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

File Size 413.78K  /  16 Page

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    INTERSIL[Intersil Corporation]
Part No. RURG15120C RURG15120CC FN3695
OCR Text ...s of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its...
Description From old datasheet system
15A, 1200V Ultrafast Dual Diode
15A 1200V Ultrafast Dual Diode
15A/ 1200V Ultrafast Dual Diode

File Size 48.59K  /  4 Page

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    INTERSIL[Intersil Corporation]
Part No. RURG1520CC FN3551
OCR Text ...s of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its...
Description From old datasheet system
15A, 200V Ultrafast Dual Diode
15A 200V Ultrafast Dual Diode
15A/ 200V Ultrafast Dual Diode

File Size 30.91K  /  3 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. RURG1520CC
OCR Text ...s of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its...
Description 15A/ 200V Ultrafast Dual Diode
15A 200V Ultrafast Dual Diode
15A, 200V Ultrafast Dual Diode

File Size 335.80K  /  4 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. RURG1540CC RURG1560 RURG1560CC
OCR Text ...e of silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. ...
Description 15A/ 400V - 600V Ultrafast Dual Diodes
15A 400V - 600V Ultrafast Dual Diodes
15A, 400V - 600V ULTRAFAST DUAL DIODES

File Size 336.99K  /  4 Page

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    INTERSIL[Intersil Corporation]
Part No. RURG1540CC RURG1560CC FN3548
OCR Text ...e of silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. ...
Description 15A, 200V ULTRAFAST DUAL DIODE
From old datasheet system
15A, 400V - 600V Ultrafast Dual Diodes
15A 200V Ultrafast Dual Diode
15A/ 200V Ultrafast Dual Diode

File Size 31.65K  /  3 Page

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    DM74ALS138 DM74ALS138M DM74ALS138N DM74ALS138SJ DM74ALS138MX DM74ALS138SJX

FAIRCHILD[Fairchild Semiconductor]
Part No. DM74ALS138 DM74ALS138M DM74ALS138N DM74ALS138SJ DM74ALS138MX DM74ALS138SJX
OCR Text ...ange s Advanced oxide-isolated, ion-implanted Schottky TTL process Ordering Code: Order Number DM74ALS138M DM74ALS138SJ DM74ALS138N Package Number M16A M16D N16E Package Description 16-Lead Small Outline Integrated Circuit (SOIC), JEDEC...
Description 3 to 8 Line Decoder/Demultiplexer
From old datasheet system

File Size 65.60K  /  6 Page

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For ion-implanted Found Datasheets File :: 964    Search Time::1.75ms    
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