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ST Microelectronics
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Part No. |
STW8NB100
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OCR Text |
...FIED) OFF
Symbol V(BR)DSS IDSS igss Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VG... |
Description |
N-CHANNEL 1000V - 1.3 OHM - 7.3A - TO-247 POWERMESH MOSFET
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File Size |
253.36K /
9 Page |
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it Online |
Download Datasheet
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SGS Thomson Microelectronics
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Part No. |
STW8NB100
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OCR Text |
...0) V GS = 30 V
T c = 125
igss
ON ()
Symbol V GS(th) R DS(on) I D(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance V DS = V GS V GS = 10 V Test Conditions I D = 250 A ID = 4 A 8 Min. 3 Typ. 4 1.2 Max. 5 1.5 U... |
Description |
N - CHANNEL 1000V - 1.2W - 8A - TO-247, PowerMESH MOSFET
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File Size |
55.84K /
6 Page |
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it Online |
Download Datasheet
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Price and Availability
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