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  igbt power Datasheet PDF File

For igbt power Found Datasheets File :: 12121    Search Time::4.438ms    
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    Mitsubishi Electric Sem...
Part No. CM75DY-12H
OCR Text ...tric m5 description: mitsubishi igbt modules are de- signed for use in switching applica- tions. each module consists of two igbts in a half...power u low v ce(sat) u discrete super-fast recovery free-wheel diode u high frequency operation u i...
Description HIGH power SWITCHING USE INSULATED TYPE

File Size 47.90K  /  4 Page

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    Microsemi
Part No. APT60GT60BRG
OCR Text igbt ? is a new generation of high voltage power igbts. using non-punch through technology the thunderbolt igbt ? offers superior ruggedness and ultrafast switching speed. low forward voltage drop high freq. switching to 150khz l...
Description igbt w/o anti-parallel diode

File Size 150.39K  /  5 Page

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    RGTVX6TS65

Rohm
Part No. RGTVX6TS65
OCR Text igbt *1 pulse width limited by t jmax. ? features ? inner circuit ? outline v ces 650v to-247n i c(100c) 80a v ce(sat) (typ.) 1.5v p d 404w...power dissipation t c = 25c p d 404 w t c = 100c p d 202 w operating junction temperature t j ? 40...
Description 650V 80A Field Stop Trench igbt

File Size 1,108.17K  /  11 Page

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    FMG2G75US120

FAIRCHILD[Fairchild Semiconductor]
Part No. FMG2G75US120
OCR Text igbt FMG2G75US120 Molding Type Module General Description Fairchild igbt power Module provides low conduction and switching losses as well as short circuit ruggedness. It's designed for the applications such as motor control, uninterrup...
Description Molding Type Module

File Size 496.50K  /  7 Page

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    RGTV60TS65

Rohm
Part No. RGTV60TS65
OCR Text igbt *1 pulse width limited by t jmax. ? features ? inner circuit ? outline v ces 650v to-247n i c(100c) 30a v ce(sat) (typ.) 1.5v p d 194w...power dissipation t c = 25c p d 194 w t c = 100c p d 97 w operating junction temperature t j ? 40 ...
Description 650V 30A Field Stop Trench igbt

File Size 1,071.33K  /  11 Page

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    RGTV60TS65D

Rohm
Part No. RGTV60TS65D
OCR Text igbt *1 pulse width limited by t jmax. a diode forward current t c = 25c i f 56 a t c = 100c i f 30 a operating junction temperature t j ? 40 to +175 c storage temperature t stg ? 55 to +175 c power dissipation t c = 25c p d 194 w t c =...
Description 650V 30A Field Stop Trench igbt

File Size 1,327.64K  /  13 Page

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    VUB145 VUB145-16NO1 VUB116 VUB116-16NO1

IXYS, Corp.
IXYS[IXYS Corporation]
Part No. VUB145 VUB145-16NO1 VUB116 VUB116-16NO1
OCR Text igbt and Fast Recovery Diode for Braking System 10+11 12 13 19+20 VRRM = 1600 V IdAVM = 116/145 A VRRM V 1600 1600 Type 1 6+7 4+...power cycling capability 1600 Rectifier Diodes 1600 TC = 100C, sinusoidal 120 TVJ = 45C, t...
Description Three Phase Rectifier Bridge with igbt and Fast Recovery Diode for Braking System 95 A, 1200 V, N-CHANNEL igbt
power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake igbt

File Size 48.31K  /  2 Page

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